JPWO2023058703A1 - - Google Patents
Info
- Publication number
- JPWO2023058703A1 JPWO2023058703A1 JP2023552932A JP2023552932A JPWO2023058703A1 JP WO2023058703 A1 JPWO2023058703 A1 JP WO2023058703A1 JP 2023552932 A JP2023552932 A JP 2023552932A JP 2023552932 A JP2023552932 A JP 2023552932A JP WO2023058703 A1 JPWO2023058703 A1 JP WO2023058703A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G33/00—Compounds of niobium
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G35/00—Compounds of tantalum
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021166184 | 2021-10-08 | ||
| PCT/JP2022/037372 WO2023058703A1 (ja) | 2021-10-08 | 2022-10-06 | 高誘電性原子膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023058703A1 true JPWO2023058703A1 (https=) | 2023-04-13 |
| JPWO2023058703A5 JPWO2023058703A5 (https=) | 2025-09-19 |
Family
ID=85804338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023552932A Pending JPWO2023058703A1 (https=) | 2021-10-08 | 2022-10-06 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2023058703A1 (https=) |
| WO (1) | WO2023058703A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4742533B2 (ja) * | 2004-08-06 | 2011-08-10 | 独立行政法人科学技術振興機構 | Ｂｉ層状化合物ナノプレート及びその配列体並びにその製造方法とそれを用いた装置 |
| JP6103524B2 (ja) * | 2013-02-06 | 2017-03-29 | 国立研究開発法人物質・材料研究機構 | ホモロガス系列層状ペロブスカイト酸化物に基づくペロブスカイトナノシート、および、その用途 |
| KR20200099406A (ko) * | 2019-02-14 | 2020-08-24 | 삼성전자주식회사 | 단결정 재료 및 그 제조 방법, 적층체, 세라믹 전자 부품 및 장치 |
-
2022
- 2022-10-06 JP JP2023552932A patent/JPWO2023058703A1/ja active Pending
- 2022-10-06 WO PCT/JP2022/037372 patent/WO2023058703A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023058703A1 (ja) | 2023-04-13 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250910 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250910 |