JPWO2023037490A1 - - Google Patents

Info

Publication number
JPWO2023037490A1
JPWO2023037490A1 JP2023546664A JP2023546664A JPWO2023037490A1 JP WO2023037490 A1 JPWO2023037490 A1 JP WO2023037490A1 JP 2023546664 A JP2023546664 A JP 2023546664A JP 2023546664 A JP2023546664 A JP 2023546664A JP WO2023037490 A1 JPWO2023037490 A1 JP WO2023037490A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023546664A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023037490A1 publication Critical patent/JPWO2023037490A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2023546664A 2021-09-10 2021-09-10 Pending JPWO2023037490A1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/033281 WO2023037490A1 (ja) 2021-09-10 2021-09-10 ナノワイヤおよびその製造方法

Publications (1)

Publication Number Publication Date
JPWO2023037490A1 true JPWO2023037490A1 (ko) 2023-03-16

Family

ID=85506168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023546664A Pending JPWO2023037490A1 (ko) 2021-09-10 2021-09-10

Country Status (2)

Country Link
JP (1) JPWO2023037490A1 (ko)
WO (1) WO2023037490A1 (ko)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5032823B2 (ja) * 2006-10-20 2012-09-26 日本電信電話株式会社 ナノ構造およびナノ構造の作製方法
US8084337B2 (en) * 2007-10-26 2011-12-27 Qunano Ab Growth of III-V compound semiconductor nanowires on silicon substrates
GB201200355D0 (en) * 2012-01-10 2012-02-22 Norwegian Univ Sci & Tech Ntnu Nanowires
JP7103027B2 (ja) * 2018-07-30 2022-07-20 富士通株式会社 化合物半導体装置、化合物半導体装置の製造方法、発電装置及び電源装置

Also Published As

Publication number Publication date
WO2023037490A1 (ja) 2023-03-16

Similar Documents

Publication Publication Date Title
BR112023005462A2 (ko)
BR112023012656A2 (ko)
BR112021014123A2 (ko)
BR112022009896A2 (ko)
BR112023009656A2 (ko)
BR112022024743A2 (ko)
BR112023006729A2 (ko)
BR102021007058A2 (ko)
BR112023008622A2 (ko)
BR102020022030A2 (ko)
JPWO2023063046A1 (ko)
BR112023011738A2 (ko)
BR112023016292A2 (ko)
BR112023004146A2 (ko)
BR112023011610A2 (ko)
BR112023011539A2 (ko)
BR112023008976A2 (ko)
JPWO2023037490A1 (ko)
JPWO2023276107A1 (ko)
BR112021017747A2 (ko)
BR102021012230A2 (ko)
BR102021012107A2 (ko)
BR102021012003A2 (ko)
BR112021013417A2 (ko)
BR102021010467A2 (ko)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240216