JPWO2023033146A1 - - Google Patents

Info

Publication number
JPWO2023033146A1
JPWO2023033146A1 JP2023545697A JP2023545697A JPWO2023033146A1 JP WO2023033146 A1 JPWO2023033146 A1 JP WO2023033146A1 JP 2023545697 A JP2023545697 A JP 2023545697A JP 2023545697 A JP2023545697 A JP 2023545697A JP WO2023033146 A1 JPWO2023033146 A1 JP WO2023033146A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023545697A
Other languages
Japanese (ja)
Other versions
JPWO2023033146A5 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023033146A1 publication Critical patent/JPWO2023033146A1/ja
Publication of JPWO2023033146A5 publication Critical patent/JPWO2023033146A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F292/00—Macromolecular compounds obtained by polymerising monomers on to inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D201/00—Coating compositions based on unspecified macromolecular compounds
    • C09D201/02—Coating compositions based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/18—Materials not provided for elsewhere for application to surfaces to minimize adherence of ice, mist or water thereto; Thawing or antifreeze materials for application to surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Inorganic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Laminated Bodies (AREA)
JP2023545697A 2021-09-03 2022-09-02 Pending JPWO2023033146A1 (enrdf_load_stackoverflow)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021144123 2021-09-03
JP2021144124 2021-09-03
PCT/JP2022/033133 WO2023033146A1 (ja) 2021-09-03 2022-09-02 成膜基板

Publications (2)

Publication Number Publication Date
JPWO2023033146A1 true JPWO2023033146A1 (enrdf_load_stackoverflow) 2023-03-09
JPWO2023033146A5 JPWO2023033146A5 (enrdf_load_stackoverflow) 2024-04-04

Family

ID=85412475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023545697A Pending JPWO2023033146A1 (enrdf_load_stackoverflow) 2021-09-03 2022-09-02

Country Status (3)

Country Link
JP (1) JPWO2023033146A1 (enrdf_load_stackoverflow)
TW (1) TW202323057A (enrdf_load_stackoverflow)
WO (1) WO2023033146A1 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024203436A1 (ja) * 2023-03-31 2024-10-03 富士フイルム株式会社 半導体デバイス処理用の組成物、修飾基板の製造方法、積層体の製造方法
WO2024237033A1 (ja) * 2023-05-16 2024-11-21 富士フイルム株式会社 半導体デバイス処理用の組成物、修飾基板の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006019154A1 (ja) * 2004-08-20 2006-02-23 Sekisui Chemical Co., Ltd. 導電性微粒子及び異方性導電材料
JP2008506502A (ja) * 2004-07-19 2008-03-06 ボストン サイエンティフィック リミティッド 導電性基板および共有結合したコーティング層を有する医療器具
JP2009042096A (ja) * 2007-08-09 2009-02-26 Fujifilm Corp 表面プラズモン増強蛍光測定用プリズム、その製造方法、及び、それを用いた表面プラズモン増強蛍光センサ
JP2009508542A (ja) * 2005-08-25 2009-03-05 ユニヴァーシティ オブ ワシントン 超低汚損スルホベタインおよびカルボキシベタイン材料ならびに関連する方法
WO2015056611A1 (ja) * 2013-10-18 2015-04-23 住友ゴム工業株式会社 表面改質金属及び金属表面の改質方法
WO2018235877A1 (ja) * 2017-06-21 2018-12-27 Jsr株式会社 カバー膜形成方法
JP2023035358A (ja) * 2021-09-01 2023-03-13 東レ株式会社 共重合体の製造方法並びにその共重合体を含む材料

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008506502A (ja) * 2004-07-19 2008-03-06 ボストン サイエンティフィック リミティッド 導電性基板および共有結合したコーティング層を有する医療器具
WO2006019154A1 (ja) * 2004-08-20 2006-02-23 Sekisui Chemical Co., Ltd. 導電性微粒子及び異方性導電材料
JP2009508542A (ja) * 2005-08-25 2009-03-05 ユニヴァーシティ オブ ワシントン 超低汚損スルホベタインおよびカルボキシベタイン材料ならびに関連する方法
JP2009042096A (ja) * 2007-08-09 2009-02-26 Fujifilm Corp 表面プラズモン増強蛍光測定用プリズム、その製造方法、及び、それを用いた表面プラズモン増強蛍光センサ
WO2015056611A1 (ja) * 2013-10-18 2015-04-23 住友ゴム工業株式会社 表面改質金属及び金属表面の改質方法
WO2018235877A1 (ja) * 2017-06-21 2018-12-27 Jsr株式会社 カバー膜形成方法
JP2023035358A (ja) * 2021-09-01 2023-03-13 東レ株式会社 共重合体の製造方法並びにその共重合体を含む材料

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHEN ET AL.: "Grafting Acrylic Polymers from Flat Nickel and CopperSurfaces by Surface-Initiated Atom Transfer Rad", LANGMUIR, vol. 24, JPN6024049396, 29 May 2008 (2008-05-29), pages 6889 - 6896, ISSN: 0005604102 *
池田卓也ほか: "有機薄膜による銅への酸化耐性の付与と電気伝導性への影響", 高分子論文集, vol. 73, no. 2, JPN6024049398, March 2016 (2016-03-01), pages 198 - 206, ISSN: 0005604100 *
高木珠吏ほか: "末端チオールポリスチレン薄膜被覆による銅への酸化耐性の付与に関するボルタンメトリー法による検討", 高分子論文集, vol. 73, no. 3, JPN6024049397, May 2016 (2016-05-01), pages 294 - 301, ISSN: 0005604101 *

Also Published As

Publication number Publication date
WO2023033146A1 (ja) 2023-03-09
TW202323057A (zh) 2023-06-16

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