JPWO2023013374A1 - - Google Patents

Info

Publication number
JPWO2023013374A1
JPWO2023013374A1 JP2023539734A JP2023539734A JPWO2023013374A1 JP WO2023013374 A1 JPWO2023013374 A1 JP WO2023013374A1 JP 2023539734 A JP2023539734 A JP 2023539734A JP 2023539734 A JP2023539734 A JP 2023539734A JP WO2023013374 A1 JPWO2023013374 A1 JP WO2023013374A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023539734A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023013374A1 publication Critical patent/JPWO2023013374A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP2023539734A 2021-08-03 2022-07-13 Pending JPWO2023013374A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021127756 2021-08-03
PCT/JP2022/027508 WO2023013374A1 (ja) 2021-08-03 2022-07-13 紫外発光ダイオードおよびそれを備える電気機器

Publications (1)

Publication Number Publication Date
JPWO2023013374A1 true JPWO2023013374A1 (ja) 2023-02-09

Family

ID=85155975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023539734A Pending JPWO2023013374A1 (ja) 2021-08-03 2022-07-13

Country Status (2)

Country Link
JP (1) JPWO2023013374A1 (ja)
WO (1) WO2023013374A1 (ja)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4538476B2 (ja) * 2007-08-27 2010-09-08 独立行政法人理化学研究所 半導体構造の形成方法
US8451877B1 (en) * 2010-03-23 2013-05-28 Sandia Corporation High efficiency III-nitride light-emitting diodes
KR102268109B1 (ko) * 2014-12-22 2021-06-22 엘지이노텍 주식회사 발광 소자 및 이를 구비한 발광 소자 패키지
EP3514840A4 (en) * 2016-09-13 2019-08-21 LG Innotek Co., Ltd. SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT HOUSING THEREWITH
JP6431013B2 (ja) * 2016-09-21 2018-11-28 シャープ株式会社 窒化アルミニウム系半導体深紫外発光素子
JP7000062B2 (ja) * 2017-07-31 2022-01-19 Ｄｏｗａホールディングス株式会社 Ｉｉｉ族窒化物エピタキシャル基板、電子線励起型発光エピタキシャル基板及びそれらの製造方法、並びに電子線励起型発光装置
US10957817B2 (en) * 2017-11-15 2021-03-23 Cornell University Polarization field assisted heterostructure design for efficient deep ultra-violet light emitting diodes
CN113169255A (zh) * 2018-12-14 2021-07-23 同和电子科技有限公司 Iii族氮化物半导体发光元件及其制造方法

Also Published As

Publication number Publication date
WO2023013374A1 (ja) 2023-02-09

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

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Effective date: 20240312