JPWO2022259746A1 - - Google Patents

Info

Publication number
JPWO2022259746A1
JPWO2022259746A1 JP2023527543A JP2023527543A JPWO2022259746A1 JP WO2022259746 A1 JPWO2022259746 A1 JP WO2022259746A1 JP 2023527543 A JP2023527543 A JP 2023527543A JP 2023527543 A JP2023527543 A JP 2023527543A JP WO2022259746 A1 JPWO2022259746 A1 JP WO2022259746A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023527543A
Other languages
Japanese (ja)
Other versions
JP7531708B2 (ja
JPWO2022259746A5 (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022259746A1 publication Critical patent/JPWO2022259746A1/ja
Publication of JPWO2022259746A5 publication Critical patent/JPWO2022259746A5/ja
Application granted granted Critical
Publication of JP7531708B2 publication Critical patent/JP7531708B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Tests Of Electronic Circuits (AREA)
JP2023527543A 2021-06-07 2022-03-31 アナログ電圧出力回路、及び、半導体装置 Active JP7531708B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021095046 2021-06-07
JP2021095046 2021-06-07
PCT/JP2022/016746 WO2022259746A1 (fr) 2021-06-07 2022-03-31 Circuit de sortie de tension analogique et dispositif à semi-conducteur

Publications (3)

Publication Number Publication Date
JPWO2022259746A1 true JPWO2022259746A1 (fr) 2022-12-15
JPWO2022259746A5 JPWO2022259746A5 (fr) 2023-09-05
JP7531708B2 JP7531708B2 (ja) 2024-08-09

Family

ID=84425213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023527543A Active JP7531708B2 (ja) 2021-06-07 2022-03-31 アナログ電圧出力回路、及び、半導体装置

Country Status (2)

Country Link
JP (1) JP7531708B2 (fr)
WO (1) WO2022259746A1 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04263449A (ja) * 1991-02-18 1992-09-18 Sumitomo Electric Ind Ltd プローブヘッド回路を有する集積回路
US6430087B1 (en) * 2000-02-28 2002-08-06 Advanced Micro Devices, Inc. Trimming method and system for wordline booster to minimize process variation of boosted wordline voltage
US7388183B2 (en) * 2002-08-23 2008-06-17 Micron Technology, Inc. Low dark current pixel with a guard drive active photodiode
JP2004295705A (ja) * 2003-03-28 2004-10-21 Citizen Watch Co Ltd 定電圧電源回路およびこれを用いた電子時計
JP2006293344A (ja) 2005-03-18 2006-10-26 Semiconductor Energy Lab Co Ltd 半導体装置、表示装置及びその駆動方法並びに電子機器
JP4091086B2 (ja) * 2006-04-24 2008-05-28 株式会社ルネサステクノロジ 半導体集積回路及びマイクロコンピュータ
JP2018042080A (ja) * 2016-09-07 2018-03-15 株式会社リコー 増幅回路及び駆動装置
US10763664B2 (en) * 2018-06-21 2020-09-01 Texas Instruments Incorporated Driver and slew-rate-control circuit providing soft start after recovery from short
US11508719B2 (en) * 2019-05-13 2022-11-22 Ememory Technology Inc. Electrostatic discharge circuit
JP2022069919A (ja) * 2020-10-26 2022-05-12 三菱電機株式会社 電源回路

Also Published As

Publication number Publication date
JP7531708B2 (ja) 2024-08-09
WO2022259746A1 (fr) 2022-12-15

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