JPWO2022254682A1 - - Google Patents
Info
- Publication number
- JPWO2022254682A1 JPWO2022254682A1 JP2023525303A JP2023525303A JPWO2022254682A1 JP WO2022254682 A1 JPWO2022254682 A1 JP WO2022254682A1 JP 2023525303 A JP2023525303 A JP 2023525303A JP 2023525303 A JP2023525303 A JP 2023525303A JP WO2022254682 A1 JPWO2022254682 A1 JP WO2022254682A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/021325 WO2022254682A1 (ja) | 2021-06-04 | 2021-06-04 | 半導体光デバイス |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022254682A1 true JPWO2022254682A1 (de) | 2022-12-08 |
Family
ID=84322931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023525303A Pending JPWO2022254682A1 (de) | 2021-06-04 | 2021-06-04 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2022254682A1 (de) |
| WO (1) | WO2022254682A1 (de) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0541562A (ja) * | 1991-08-02 | 1993-02-19 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発光素子 |
| JP2003069153A (ja) * | 2001-08-29 | 2003-03-07 | Hitachi Ltd | 半導体光デバイス及び集積型光半導体装置 |
| JP5028640B2 (ja) * | 2004-03-26 | 2012-09-19 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| JP2011091164A (ja) * | 2009-10-21 | 2011-05-06 | Sumitomo Electric Ind Ltd | 半導体集積素子 |
| JP2011134870A (ja) * | 2009-12-24 | 2011-07-07 | Sumitomo Electric Ind Ltd | リッジ型半導体レーザー及びリッジ型半導体レーザーの製造方法 |
| EP2811593B1 (de) * | 2013-06-07 | 2016-04-27 | Alcatel Lucent | Vorrichtung zur Emission von abstimmbarem Laser |
-
2021
- 2021-06-04 JP JP2023525303A patent/JPWO2022254682A1/ja active Pending
- 2021-06-04 WO PCT/JP2021/021325 patent/WO2022254682A1/ja active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022254682A1 (ja) | 2022-12-08 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20231121 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240827 |