JPWO2022249914A1 - - Google Patents

Info

Publication number
JPWO2022249914A1
JPWO2022249914A1 JP2023523419A JP2023523419A JPWO2022249914A1 JP WO2022249914 A1 JPWO2022249914 A1 JP WO2022249914A1 JP 2023523419 A JP2023523419 A JP 2023523419A JP 2023523419 A JP2023523419 A JP 2023523419A JP WO2022249914 A1 JPWO2022249914 A1 JP WO2022249914A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023523419A
Other versions
JPWO2022249914A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022249914A1 publication Critical patent/JPWO2022249914A1/ja
Publication of JPWO2022249914A5 publication Critical patent/JPWO2022249914A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
JP2023523419A 2021-05-25 2022-05-16 Pending JPWO2022249914A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021087625 2021-05-25
PCT/JP2022/020369 WO2022249914A1 (ja) 2021-05-25 2022-05-16 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2022249914A1 true JPWO2022249914A1 (ja) 2022-12-01
JPWO2022249914A5 JPWO2022249914A5 (ja) 2024-02-27

Family

ID=84230017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023523419A Pending JPWO2022249914A1 (ja) 2021-05-25 2022-05-16

Country Status (2)

Country Link
JP (1) JPWO2022249914A1 (ja)
WO (1) WO2022249914A1 (ja)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111799324A (zh) * 2015-05-18 2020-10-20 住友电气工业株式会社 碳化硅外延基板、碳化硅半导体装置及其制造方法
JP6584253B2 (ja) * 2015-09-16 2019-10-02 ローム株式会社 ＳｉＣエピタキシャルウェハ、ＳｉＣエピタキシャルウェハの製造装置、ＳｉＣエピタキシャルウェハの製造方法、および半導体装置
JP6481582B2 (ja) * 2015-10-13 2019-03-13 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Also Published As

Publication number Publication date
WO2022249914A1 (ja) 2022-12-01

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

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Effective date: 20231114