JPWO2022249441A1 - - Google Patents

Info

Publication number
JPWO2022249441A1
JPWO2022249441A1 JP2023523901A JP2023523901A JPWO2022249441A1 JP WO2022249441 A1 JPWO2022249441 A1 JP WO2022249441A1 JP 2023523901 A JP2023523901 A JP 2023523901A JP 2023523901 A JP2023523901 A JP 2023523901A JP WO2022249441 A1 JPWO2022249441 A1 JP WO2022249441A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023523901A
Other versions
JPWO2022249441A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022249441A1 publication Critical patent/JPWO2022249441A1/ja
Publication of JPWO2022249441A5 publication Critical patent/JPWO2022249441A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45273—Mirror types
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00—Baseband systems
    • H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/261—Amplifier which being suitable for instrumentation applications

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Manipulation Of Pulses (AREA)
JP2023523901A 2021-05-28 2021-05-28 Pending JPWO2022249441A1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/020377 WO2022249441A1 (ja) 2021-05-28 2021-05-28 検出回路、受信回路及び半導体集積回路

Publications (2)

Publication Number Publication Date
JPWO2022249441A1 true JPWO2022249441A1 (ja) 2022-12-01
JPWO2022249441A5 JPWO2022249441A5 (ja) 2024-02-29

Family

ID=84228668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023523901A Pending JPWO2022249441A1 (ja) 2021-05-28 2021-05-28

Country Status (4)

Country Link
US (1) US20240088851A1 (ja)
JP (1) JPWO2022249441A1 (ja)
CN (1) CN117355942A (ja)
WO (1) WO2022249441A1 (ja)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01293788A (ja) * 1988-05-20 1989-11-27 Mitsubishi Electric Corp 位相検出回路
US7352248B2 (en) * 2005-03-01 2008-04-01 Seiko Epson Corporation Method and apparatus for maintaining a clock/data recovery circuit frequency during transmitter low power mode
JP2007019648A (ja) * 2005-07-05 2007-01-25 Seiko Epson Corp データ転送制御装置及び電子機器
JP5917858B2 (ja) * 2011-08-29 2016-05-18 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP2013232747A (ja) * 2012-04-27 2013-11-14 Renesas Electronics Corp 受信回路及び受信方法
JP6028431B2 (ja) * 2012-07-12 2016-11-16 セイコーＮｐｃ株式会社 Ｅｃｌ出力回路
JP2019169803A (ja) * 2018-03-22 2019-10-03 東芝メモリ株式会社 受信装置およびデータ受信方法

Also Published As

Publication number Publication date
WO2022249441A1 (ja) 2022-12-01
CN117355942A (zh) 2024-01-05
US20240088851A1 (en) 2024-03-14

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231030

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240415