JPWO2022190640A1 - - Google Patents
Info
- Publication number
- JPWO2022190640A1 JPWO2022190640A1 JP2023505166A JP2023505166A JPWO2022190640A1 JP WO2022190640 A1 JPWO2022190640 A1 JP WO2022190640A1 JP 2023505166 A JP2023505166 A JP 2023505166A JP 2023505166 A JP2023505166 A JP 2023505166A JP WO2022190640 A1 JPWO2022190640 A1 JP WO2022190640A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/52—Elements optimising image sensor operation, e.g. for electromagnetic interference [EMI] protection or temperature control by heat transfer or cooling elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021039398 | 2021-03-11 | ||
PCT/JP2022/001491 WO2022190640A1 (ja) | 2021-03-11 | 2022-01-18 | 半導体装置、撮像装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2022190640A1 true JPWO2022190640A1 (ja) | 2022-09-15 |
Family
ID=83226518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023505166A Pending JPWO2022190640A1 (ja) | 2021-03-11 | 2022-01-18 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20240153982A1 (ja) |
EP (1) | EP4307373A1 (ja) |
JP (1) | JPWO2022190640A1 (ja) |
CN (1) | CN117043949A (ja) |
WO (1) | WO2022190640A1 (ja) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3663036B2 (ja) * | 1997-08-25 | 2005-06-22 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
JP2002334967A (ja) * | 2001-05-07 | 2002-11-22 | Sony Corp | 3次元半導体チップ |
KR20040038507A (ko) * | 2002-11-01 | 2004-05-08 | 한국전자통신연구원 | 실리콘온인슐레이터 기판을 이용한 열 방출 구조를 가진반도체 장치 및 그의 제조방법 |
JP5843475B2 (ja) * | 2010-06-30 | 2016-01-13 | キヤノン株式会社 | 固体撮像装置および固体撮像装置の製造方法 |
JP5568451B2 (ja) * | 2010-11-26 | 2014-08-06 | 株式会社フジクラ | 半導体パッケージ |
JP2015061041A (ja) | 2013-09-20 | 2015-03-30 | 株式会社東芝 | 放射線検出器および放射線検出装置 |
JP2016181531A (ja) * | 2015-03-23 | 2016-10-13 | ソニー株式会社 | 半導体装置、および半導体装置の製造方法、固体撮像素子、撮像装置、並びに電子機器 |
JP2017188611A (ja) * | 2016-04-08 | 2017-10-12 | 日本電波工業株式会社 | 半導体装置 |
JP2020098901A (ja) * | 2018-12-14 | 2020-06-25 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法、半導体装置の製造方法 |
-
2022
- 2022-01-18 US US18/548,669 patent/US20240153982A1/en active Pending
- 2022-01-18 CN CN202280019127.0A patent/CN117043949A/zh active Pending
- 2022-01-18 JP JP2023505166A patent/JPWO2022190640A1/ja active Pending
- 2022-01-18 EP EP22766608.8A patent/EP4307373A1/en active Pending
- 2022-01-18 WO PCT/JP2022/001491 patent/WO2022190640A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN117043949A (zh) | 2023-11-10 |
WO2022190640A1 (ja) | 2022-09-15 |
US20240153982A1 (en) | 2024-05-09 |
EP4307373A1 (en) | 2024-01-17 |