JPWO2022158301A1 - - Google Patents

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Publication number
JPWO2022158301A1
JPWO2022158301A1 JP2022576595A JP2022576595A JPWO2022158301A1 JP WO2022158301 A1 JPWO2022158301 A1 JP WO2022158301A1 JP 2022576595 A JP2022576595 A JP 2022576595A JP 2022576595 A JP2022576595 A JP 2022576595A JP WO2022158301 A1 JPWO2022158301 A1 JP WO2022158301A1
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Japan
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JP2022576595A
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JP7475501B2 (ja
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Priority to JP2024022262A priority Critical patent/JP2024056932A/ja
Priority to JP2024022190A priority patent/JP2024056929A/ja
Priority to JP2024022126A priority patent/JP2024056925A/ja
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Publication of JP7475501B2 publication Critical patent/JP7475501B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18397—Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18347—Mesa comprising active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18352—Mesa with inclined sidewall
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2022576595A 2021-01-20 2022-01-06 面発光レーザ、電子機器及び面発光レーザの製造方法 Active JP7475501B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2024022262A JP2024056932A (ja) 2021-01-20 2024-02-16 面発光レーザ、電子機器及び面発光レーザの製造方法
JP2024022190A JP2024056929A (ja) 2021-01-20 2024-02-16 面発光レーザ、電子機器及び面発光レーザの製造方法
JP2024022126A JP2024056925A (ja) 2021-01-20 2024-02-16 面発光レーザ、電子機器及び面発光レーザの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021007040 2021-01-20
JP2021007040 2021-01-20
PCT/JP2022/000231 WO2022158301A1 (ja) 2021-01-20 2022-01-06 面発光レーザ、電子機器及び面発光レーザの製造方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2024022126A Division JP2024056925A (ja) 2021-01-20 2024-02-16 面発光レーザ、電子機器及び面発光レーザの製造方法
JP2024022262A Division JP2024056932A (ja) 2021-01-20 2024-02-16 面発光レーザ、電子機器及び面発光レーザの製造方法
JP2024022190A Division JP2024056929A (ja) 2021-01-20 2024-02-16 面発光レーザ、電子機器及び面発光レーザの製造方法

Publications (2)

Publication Number Publication Date
JPWO2022158301A1 true JPWO2022158301A1 (ja) 2022-07-28
JP7475501B2 JP7475501B2 (ja) 2024-04-26

Family

ID=82548856

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2022576595A Active JP7475501B2 (ja) 2021-01-20 2022-01-06 面発光レーザ、電子機器及び面発光レーザの製造方法
JP2024022190A Pending JP2024056929A (ja) 2021-01-20 2024-02-16 面発光レーザ、電子機器及び面発光レーザの製造方法
JP2024022262A Pending JP2024056932A (ja) 2021-01-20 2024-02-16 面発光レーザ、電子機器及び面発光レーザの製造方法
JP2024022126A Pending JP2024056925A (ja) 2021-01-20 2024-02-16 面発光レーザ、電子機器及び面発光レーザの製造方法

Family Applications After (3)

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JP2024022190A Pending JP2024056929A (ja) 2021-01-20 2024-02-16 面発光レーザ、電子機器及び面発光レーザの製造方法
JP2024022262A Pending JP2024056932A (ja) 2021-01-20 2024-02-16 面発光レーザ、電子機器及び面発光レーザの製造方法
JP2024022126A Pending JP2024056925A (ja) 2021-01-20 2024-02-16 面発光レーザ、電子機器及び面発光レーザの製造方法

Country Status (6)

Country Link
US (1) US20240055833A1 (ja)
JP (4) JP7475501B2 (ja)
CN (1) CN116762246A (ja)
DE (1) DE112022000703T5 (ja)
TW (1) TW202236761A (ja)
WO (1) WO2022158301A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024150654A1 (ja) * 2023-01-11 2024-07-18 ローム株式会社 面発光レーザ装置
WO2024150655A1 (ja) * 2023-01-11 2024-07-18 ローム株式会社 面発光レーザ装置

Citations (2)

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JP2008180719A (ja) * 2007-01-25 2008-08-07 Osram Opto Semiconductors Gmbh 測定装置および測定システム
JP2018125404A (ja) * 2017-01-31 2018-08-09 株式会社リコー 面発光レーザ素子

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DE19813727C2 (de) * 1998-03-27 2000-04-13 Siemens Ag Vertikalresonator-Laserdiode und Verfahren zu deren Herstellung
US6931042B2 (en) * 2000-05-31 2005-08-16 Sandia Corporation Long wavelength vertical cavity surface emitting laser
KR100384598B1 (ko) * 2000-11-29 2003-05-22 주식회사 옵토웰 질화물반도체 수직공진 표면발광 레이저
US7085298B2 (en) * 2003-10-31 2006-08-01 Finisar Corporation Tunnel junction utilizing GaPSb, AlGaPSb
JP4803992B2 (ja) * 2004-06-02 2011-10-26 株式会社リコー 発光装置および光伝送システムおよび垂直共振器型面発光半導体レーザ素子
JP5017804B2 (ja) 2005-06-15 2012-09-05 富士ゼロックス株式会社 トンネル接合型面発光半導体レーザ装置およびその製造方法
JP2007194561A (ja) * 2006-01-23 2007-08-02 Nec Corp 面発光レーザ
US8731012B2 (en) * 2012-01-24 2014-05-20 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser and its manufacturing method, surface emitting semiconductor laser device, optical transmitter, and information processor
CN111564754A (zh) * 2015-06-09 2020-08-21 通快光电器件有限公司 垂直腔面发射激光器
CN109075532B (zh) * 2016-03-04 2021-10-22 普林斯顿光电子股份有限公司 高速vcsel装置
JP7106820B2 (ja) * 2017-07-03 2022-07-27 富士フイルムビジネスイノベーション株式会社 光半導体素子
GB201712726D0 (en) * 2017-08-08 2017-09-20 Landa Labs (2012) Ltd Electric current and heat mitigation in a printing machine writing module
US11728623B2 (en) * 2019-12-13 2023-08-15 Mellanox Technologies, Ltd. Vertical-cavity surface-emitting laser (VCSEL) with cascaded active region
WO2021196368A1 (en) * 2020-04-02 2021-10-07 Shenzhen Raysees AI Technology Co., Ltd. Bottom-emitting multijunction vcsel array

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008180719A (ja) * 2007-01-25 2008-08-07 Osram Opto Semiconductors Gmbh 測定装置および測定システム
JP2018125404A (ja) * 2017-01-31 2018-08-09 株式会社リコー 面発光レーザ素子

Also Published As

Publication number Publication date
DE112022000703T5 (de) 2023-11-16
CN116762246A (zh) 2023-09-15
JP7475501B2 (ja) 2024-04-26
JP2024056932A (ja) 2024-04-23
JP2024056925A (ja) 2024-04-23
WO2022158301A1 (ja) 2022-07-28
JP2024056929A (ja) 2024-04-23
TW202236761A (zh) 2022-09-16
US20240055833A1 (en) 2024-02-15

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