JPWO2022130827A1 - - Google Patents

Info

Publication number
JPWO2022130827A1
JPWO2022130827A1 JP2022569765A JP2022569765A JPWO2022130827A1 JP WO2022130827 A1 JPWO2022130827 A1 JP WO2022130827A1 JP 2022569765 A JP2022569765 A JP 2022569765A JP 2022569765 A JP2022569765 A JP 2022569765A JP WO2022130827 A1 JPWO2022130827 A1 JP WO2022130827A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022569765A
Other versions
JPWO2022130827A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022130827A1 publication Critical patent/JPWO2022130827A1/ja
Publication of JPWO2022130827A5 publication Critical patent/JPWO2022130827A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2621Circuits therefor for testing field effect transistors, i.e. FET's
    • G01R31/2628Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18Modifications for indicating state of switch
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28Modifications for introducing a time delay before switching
    • H03K17/284Modifications for introducing a time delay before switching in field effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027Measuring means of, e.g. currents through or voltages across the switch

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
JP2022569765A 2020-12-17 2021-11-08 Pending JPWO2022130827A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020209306 2020-12-17
PCT/JP2021/040996 WO2022130827A1 (ja) 2020-12-17 2021-11-08 電圧制御型半導体素子の温度検出方法および駆動装置

Publications (2)

Publication Number Publication Date
JPWO2022130827A1 true JPWO2022130827A1 (ja) 2022-06-23
JPWO2022130827A5 JPWO2022130827A5 (ja) 2023-02-24

Family

ID=82059700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022569765A Pending JPWO2022130827A1 (ja) 2020-12-17 2021-11-08

Country Status (5)

Country Link
US (1) US20230088396A1 (ja)
JP (1) JPWO2022130827A1 (ja)
CN (1) CN115698732A (ja)
DE (1) DE112021001992T5 (ja)
WO (1) WO2022130827A1 (ja)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2615467B1 (en) 2012-01-11 2014-06-18 ABB Research Ltd. System and method for monitoring in real time the operating state of an IGBT device
US9520879B2 (en) * 2014-06-18 2016-12-13 Texas Instruments Incorporated Adaptive blanking timer for short circuit detection
EP3270513B1 (en) * 2016-07-11 2019-07-03 NXP USA, Inc. Igbt gate current slope measure to estimate miller plateau
US10574226B2 (en) * 2017-02-16 2020-02-25 Texas Instruments Incorporated Gate driver including gate sense circuit
JP7140635B2 (ja) 2018-10-31 2022-09-21 株式会社日立製作所 電力変換装置

Also Published As

Publication number Publication date
WO2022130827A1 (ja) 2022-06-23
CN115698732A (zh) 2023-02-03
US20230088396A1 (en) 2023-03-23
DE112021001992T5 (de) 2023-01-12

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Legal Events

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