JPWO2022123719A1 - - Google Patents

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Publication number
JPWO2022123719A1
JPWO2022123719A1 JP2022567965A JP2022567965A JPWO2022123719A1 JP WO2022123719 A1 JPWO2022123719 A1 JP WO2022123719A1 JP 2022567965 A JP2022567965 A JP 2022567965A JP 2022567965 A JP2022567965 A JP 2022567965A JP WO2022123719 A1 JPWO2022123719 A1 JP WO2022123719A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022567965A
Other versions
JP7502684B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022123719A1 publication Critical patent/JPWO2022123719A1/ja
Application granted granted Critical
Publication of JP7502684B2 publication Critical patent/JP7502684B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
    • H01S5/0611—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors wavelength convertors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H01S5/1218—Multiplicity of periods in superstructured configuration, e.g. more than one period in an alternate sequence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2022567965A 2020-12-10 2020-12-10 波長可変光送信機 Active JP7502684B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/046022 WO2022123719A1 (ja) 2020-12-10 2020-12-10 波長可変光送信機

Publications (2)

Publication Number Publication Date
JPWO2022123719A1 true JPWO2022123719A1 (ja) 2022-06-16
JP7502684B2 JP7502684B2 (ja) 2024-06-19

Family

ID=81973468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022567965A Active JP7502684B2 (ja) 2020-12-10 2020-12-10 波長可変光送信機

Country Status (3)

Country Link
US (1) US20240047941A1 (ja)
JP (1) JP7502684B2 (ja)
WO (1) WO2022123719A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7544304B1 (ja) 2023-12-20 2024-09-03 三菱電機株式会社 光モジュールおよび光トランシーバ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001018919A1 (en) 1999-09-03 2001-03-15 The Regents Of The University Of California Tunable laser source with integrated optical modulator
JP4288953B2 (ja) * 2002-02-19 2009-07-01 三菱電機株式会社 波長可変半導体レーザ
JP2007227723A (ja) 2006-02-24 2007-09-06 Nippon Telegr & Teleph Corp <Ntt> 波長可変光源装置、及び、波長可変光源制御方法
JP2010245386A (ja) 2009-04-08 2010-10-28 Sumitomo Electric Ind Ltd 波長可変レーザ、波長可変レーザ装置、及び波長可変レーザ制御方法
US8472805B2 (en) 2010-05-26 2013-06-25 Google Inc. Tunable multi-wavelength optical transmitter and transceiver for optical communications based on wavelength division multiplexing
EP3192136B1 (en) 2014-09-08 2020-10-07 Lumentum Technology UK Limited Monolithically integrated tunable semiconductor laser
WO2019235235A1 (ja) 2018-06-05 2019-12-12 日本電信電話株式会社 光送信機および多波長光送信機
US11862935B2 (en) 2019-05-30 2024-01-02 Nippon Telegraph And Telephone Corporation Tunable DBR semiconductor laser

Also Published As

Publication number Publication date
JP7502684B2 (ja) 2024-06-19
US20240047941A1 (en) 2024-02-08
WO2022123719A1 (ja) 2022-06-16

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