JPWO2022118922A1 - - Google Patents
Info
- Publication number
- JPWO2022118922A1 JPWO2022118922A1 JP2022566980A JP2022566980A JPWO2022118922A1 JP WO2022118922 A1 JPWO2022118922 A1 JP WO2022118922A1 JP 2022566980 A JP2022566980 A JP 2022566980A JP 2022566980 A JP2022566980 A JP 2022566980A JP WO2022118922 A1 JPWO2022118922 A1 JP WO2022118922A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020201978 | 2020-12-04 | ||
| PCT/JP2021/044306 WO2022118922A1 (ja) | 2020-12-04 | 2021-12-02 | シリコン単結晶の育成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022118922A1 true JPWO2022118922A1 (ja) | 2022-06-09 |
Family
ID=81853328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022566980A Pending JPWO2022118922A1 (ja) | 2020-12-04 | 2021-12-02 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240003044A1 (ja) |
| JP (1) | JPWO2022118922A1 (ja) |
| KR (1) | KR20230092011A (ja) |
| CN (1) | CN116670338A (ja) |
| DE (1) | DE112021006295T5 (ja) |
| WO (1) | WO2022118922A1 (ja) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5161492B2 (ja) * | 2007-05-31 | 2013-03-13 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコン単結晶の製造方法 |
| JP5724226B2 (ja) | 2010-06-18 | 2015-05-27 | 株式会社Sumco | シリコン単結晶の育成方法 |
| JP6569613B2 (ja) * | 2016-07-11 | 2019-09-04 | 株式会社Sumco | シリコンウェーハの評価方法及び製造方法 |
-
2021
- 2021-12-02 JP JP2022566980A patent/JPWO2022118922A1/ja active Pending
- 2021-12-02 KR KR1020237017886A patent/KR20230092011A/ko not_active Application Discontinuation
- 2021-12-02 WO PCT/JP2021/044306 patent/WO2022118922A1/ja active Application Filing
- 2021-12-02 DE DE112021006295.6T patent/DE112021006295T5/de active Pending
- 2021-12-02 CN CN202180081277.XA patent/CN116670338A/zh active Pending
- 2021-12-02 US US18/265,070 patent/US20240003044A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE112021006295T5 (de) | 2023-09-21 |
| US20240003044A1 (en) | 2024-01-04 |
| WO2022118922A1 (ja) | 2022-06-09 |
| CN116670338A (zh) | 2023-08-29 |
| KR20230092011A (ko) | 2023-06-23 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230518 |