JPWO2022107217A1 - - Google Patents
Info
- Publication number
- JPWO2022107217A1 JPWO2022107217A1 JP2022508512A JP2022508512A JPWO2022107217A1 JP WO2022107217 A1 JPWO2022107217 A1 JP WO2022107217A1 JP 2022508512 A JP2022508512 A JP 2022508512A JP 2022508512 A JP2022508512 A JP 2022508512A JP WO2022107217 A1 JPWO2022107217 A1 JP WO2022107217A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2020/042834 WO2022107217A1 (ja) | 2020-11-17 | 2020-11-17 | 研磨剤、複数液式研磨剤及び研磨方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2022107217A1 true JPWO2022107217A1 (ja) | 2022-05-27 |
JP7435739B2 JP7435739B2 (ja) | 2024-02-21 |
Family
ID=81708507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022508512A Active JP7435739B2 (ja) | 2020-11-17 | 2020-11-17 | 研磨剤、複数液式研磨剤及び研磨方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7435739B2 (ja) |
TW (1) | TW202229499A (ja) |
WO (1) | WO2022107217A1 (ja) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012015352A (ja) * | 2010-07-01 | 2012-01-19 | Hitachi Chem Co Ltd | Cmp用研磨液及びこの研磨液を用いた研磨方法 |
JP2013120885A (ja) * | 2011-12-08 | 2013-06-17 | Hitachi Chemical Co Ltd | Cmp用研磨液及びこの研磨液を用いた研磨方法 |
US20130186850A1 (en) * | 2012-01-24 | 2013-07-25 | Applied Materials, Inc. | Slurry for cobalt applications |
WO2014007063A1 (ja) * | 2012-07-06 | 2014-01-09 | 日立化成株式会社 | Cmp用研磨液、貯蔵液及び研磨方法 |
JP2015189829A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2017157591A (ja) * | 2016-02-29 | 2017-09-07 | 日立化成株式会社 | Cmp研磨液及び研磨方法 |
JP2019520697A (ja) * | 2016-04-27 | 2019-07-18 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | コバルト及び/又はコバルト合金を含む基板の研磨のための化学機械研磨(cmp)組成物の使用方法 |
JP2020174176A (ja) * | 2019-03-29 | 2020-10-22 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | コバルトの除去速度が高くコバルトのコロージョンが減少したコバルトのためのケミカルメカニカルポリッシング方法 |
-
2020
- 2020-11-17 JP JP2022508512A patent/JP7435739B2/ja active Active
- 2020-11-17 WO PCT/JP2020/042834 patent/WO2022107217A1/ja active Application Filing
-
2021
- 2021-11-16 TW TW110142473A patent/TW202229499A/zh unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012015352A (ja) * | 2010-07-01 | 2012-01-19 | Hitachi Chem Co Ltd | Cmp用研磨液及びこの研磨液を用いた研磨方法 |
JP2013120885A (ja) * | 2011-12-08 | 2013-06-17 | Hitachi Chemical Co Ltd | Cmp用研磨液及びこの研磨液を用いた研磨方法 |
US20130186850A1 (en) * | 2012-01-24 | 2013-07-25 | Applied Materials, Inc. | Slurry for cobalt applications |
WO2014007063A1 (ja) * | 2012-07-06 | 2014-01-09 | 日立化成株式会社 | Cmp用研磨液、貯蔵液及び研磨方法 |
JP2015189829A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2017157591A (ja) * | 2016-02-29 | 2017-09-07 | 日立化成株式会社 | Cmp研磨液及び研磨方法 |
JP2019520697A (ja) * | 2016-04-27 | 2019-07-18 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | コバルト及び/又はコバルト合金を含む基板の研磨のための化学機械研磨(cmp)組成物の使用方法 |
JP2020174176A (ja) * | 2019-03-29 | 2020-10-22 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | コバルトの除去速度が高くコバルトのコロージョンが減少したコバルトのためのケミカルメカニカルポリッシング方法 |
Also Published As
Publication number | Publication date |
---|---|
JP7435739B2 (ja) | 2024-02-21 |
WO2022107217A1 (ja) | 2022-05-27 |
TW202229499A (zh) | 2022-08-01 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220209 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230314 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230515 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230829 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231010 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240109 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240122 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 7435739 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |