JPWO2022091537A1 - - Google Patents

Info

Publication number
JPWO2022091537A1
JPWO2022091537A1 JP2022505342A JP2022505342A JPWO2022091537A1 JP WO2022091537 A1 JPWO2022091537 A1 JP WO2022091537A1 JP 2022505342 A JP2022505342 A JP 2022505342A JP 2022505342 A JP2022505342 A JP 2022505342A JP WO2022091537 A1 JPWO2022091537 A1 JP WO2022091537A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022505342A
Other versions
JP7123282B1 (ja
JPWO2022091537A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022091537A1 publication Critical patent/JPWO2022091537A1/ja
Priority to JP2022076495A priority Critical patent/JP7345593B2/ja
Application granted granted Critical
Publication of JP7123282B1 publication Critical patent/JP7123282B1/ja
Publication of JPWO2022091537A5 publication Critical patent/JPWO2022091537A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0295—Constructional arrangements for removing other types of optical noise or for performing calibration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08—Measuring electromagnetic field characteristics
    • G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
    • G01R29/0878—Sensors; antennas; probes; detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
    • G01R31/129—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of components or parts made of semiconducting materials; of LV components or parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2022505342A 2020-10-26 2021-08-24 電磁波検出器および電磁波検出器アレイ Active JP7123282B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022076495A JP7345593B2 (ja) 2020-10-26 2022-05-06 電磁波検出器および電磁波検出器アレイ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020178997 2020-10-26
JP2020178997 2020-10-26
PCT/JP2021/030923 WO2022091537A1 (ja) 2020-10-26 2021-08-24 電磁波検出器および電磁波検出器アレイ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022076495A Division JP7345593B2 (ja) 2020-10-26 2022-05-06 電磁波検出器および電磁波検出器アレイ

Publications (3)

Publication Number Publication Date
JPWO2022091537A1 true JPWO2022091537A1 (ja) 2022-05-05
JP7123282B1 JP7123282B1 (ja) 2022-08-22
JPWO2022091537A5 JPWO2022091537A5 (ja) 2022-10-11

Family

ID=81382238

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022505342A Active JP7123282B1 (ja) 2020-10-26 2021-08-24 電磁波検出器および電磁波検出器アレイ
JP2022076495A Active JP7345593B2 (ja) 2020-10-26 2022-05-06 電磁波検出器および電磁波検出器アレイ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022076495A Active JP7345593B2 (ja) 2020-10-26 2022-05-06 電磁波検出器および電磁波検出器アレイ

Country Status (4)

Country Link
US (1) US20230332942A1 (ja)
JP (2) JP7123282B1 (ja)
CN (1) CN116529571A (ja)
WO (1) WO2022091537A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4167302A4 (en) * 2020-06-15 2023-12-13 Mitsubishi Electric Corporation ELECTROMAGNETIC WAVE DETECTOR AND ELECTROMAGNETIC WAVE DETECTOR ARRAY

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102255301B1 (ko) * 2014-05-19 2021-05-24 삼성전자주식회사 강유전성 물질을 포함하는 광전자소자
KR102237826B1 (ko) * 2014-07-18 2021-04-08 삼성전자주식회사 그래핀 소자와 그 제조 및 동작방법과 그래핀 소자를 포함하는 전자장치
CN109417106B (zh) * 2016-07-12 2022-04-26 三菱电机株式会社 电磁波检测器以及电磁波检测器阵列
CN106784122B (zh) * 2016-12-01 2018-06-22 浙江大学 基于石墨烯/掺硼硅量子点/硅的光电探测器及制备方法
JP6918591B2 (ja) * 2017-06-16 2021-08-11 株式会社豊田中央研究所 電磁波検出器およびその製造方法
KR102561102B1 (ko) * 2018-02-13 2023-07-28 삼성전자주식회사 2차원 절연체를 포함하는 근적외선 센서
CN112292763B (zh) * 2018-06-26 2024-04-05 三菱电机株式会社 电磁波检测器以及电磁波检测器阵列
JP6642769B1 (ja) * 2018-06-28 2020-02-12 三菱電機株式会社 グラフェンを用いた電子デバイスの製造方法
JP6766277B1 (ja) * 2019-06-20 2020-10-07 三菱電機株式会社 反射光学素子

Also Published As

Publication number Publication date
CN116529571A (zh) 2023-08-01
JP7123282B1 (ja) 2022-08-22
WO2022091537A1 (ja) 2022-05-05
US20230332942A1 (en) 2023-10-19
JP2022110034A (ja) 2022-07-28
JP7345593B2 (ja) 2023-09-15

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