JPWO2022079757A1 - - Google Patents

Info

Publication number
JPWO2022079757A1
JPWO2022079757A1 JP2022557230A JP2022557230A JPWO2022079757A1 JP WO2022079757 A1 JPWO2022079757 A1 JP WO2022079757A1 JP 2022557230 A JP2022557230 A JP 2022557230A JP 2022557230 A JP2022557230 A JP 2022557230A JP WO2022079757 A1 JPWO2022079757 A1 JP WO2022079757A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022557230A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022079757A1 publication Critical patent/JPWO2022079757A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1809—Diffraction gratings with pitch less than or comparable to the wavelength
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
    • G02B5/1819—Plural gratings positioned on the same surface, e.g. array of gratings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B2005/1804—Transmission gratings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2022557230A 2020-10-12 2020-10-12 Pending JPWO2022079757A1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/038459 WO2022079757A1 (ja) 2020-10-12 2020-10-12 光学素子、撮像素子及び撮像装置

Publications (1)

Publication Number Publication Date
JPWO2022079757A1 true JPWO2022079757A1 (ja) 2022-04-21

Family

ID=81207895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022557230A Pending JPWO2022079757A1 (ja) 2020-10-12 2020-10-12

Country Status (5)

Country Link
US (1) US20230387165A1 (ja)
EP (1) EP4212920A4 (ja)
JP (1) JPWO2022079757A1 (ja)
CN (1) CN116391139A (ja)
WO (1) WO2022079757A1 (ja)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4479969B2 (ja) * 2004-09-01 2010-06-09 パナソニック株式会社 集光素子
US7808023B2 (en) * 2005-08-24 2010-10-05 Aptina Imaging Corporation Method and apparatus providing integrated color pixel with buried sub-wavelength gratings in solid state imagers
JP2010212625A (ja) * 2009-03-12 2010-09-24 Nikon Corp 固体撮像素子
JP2011043681A (ja) * 2009-08-21 2011-03-03 Canon Inc 光学素子、光検出素子、光変調素子、撮像素子及びカメラ
JP6347620B2 (ja) * 2014-02-13 2018-06-27 キヤノン株式会社 固体撮像素子及び撮像装置
JP2016015430A (ja) * 2014-07-03 2016-01-28 ソニー株式会社 固体撮像素子および電子機器
US9467633B2 (en) * 2015-02-27 2016-10-11 Semiconductor Components Industries, Llc High dynamic range imaging systems having differential photodiode exposures
JP6514657B2 (ja) * 2015-03-11 2019-05-15 富士フイルム株式会社 反射防止光学部材
US10403668B2 (en) * 2015-07-29 2019-09-03 Samsung Electronics Co., Ltd. Imaging apparatus and image sensor including the same
JP2017046020A (ja) * 2015-08-24 2017-03-02 株式会社東芝 固体撮像装置
JP2017092190A (ja) * 2015-11-06 2017-05-25 キヤノン株式会社 撮像素子及びそれを用いた撮像装置
JP6951917B2 (ja) * 2017-09-15 2021-10-20 株式会社ソニー・インタラクティブエンタテインメント 撮像装置
JP6707105B2 (ja) * 2018-04-17 2020-06-10 日本電信電話株式会社 カラー撮像素子および撮像装置
US10573678B2 (en) * 2018-05-09 2020-02-25 Semiconductor Components Industries, Llc Microlenses for high dynamic range imaging pixels
JP6857163B2 (ja) * 2018-09-26 2021-04-14 日本電信電話株式会社 偏光イメージング撮像システム

Also Published As

Publication number Publication date
CN116391139A (zh) 2023-07-04
EP4212920A1 (en) 2023-07-19
EP4212920A4 (en) 2024-05-22
US20230387165A1 (en) 2023-11-30
WO2022079757A1 (ja) 2022-04-21

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