JPWO2022074968A1 - - Google Patents
Info
- Publication number
- JPWO2022074968A1 JPWO2022074968A1 JP2022555305A JP2022555305A JPWO2022074968A1 JP WO2022074968 A1 JPWO2022074968 A1 JP WO2022074968A1 JP 2022555305 A JP2022555305 A JP 2022555305A JP 2022555305 A JP2022555305 A JP 2022555305A JP WO2022074968 A1 JPWO2022074968 A1 JP WO2022074968A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020168241 | 2020-10-05 | ||
| PCT/JP2021/032241 WO2022074968A1 (ja) | 2020-10-05 | 2021-09-02 | 不揮発性メモリ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022074968A1 true JPWO2022074968A1 (ja) | 2022-04-14 |
Family
ID=81125833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022555305A Pending JPWO2022074968A1 (ja) | 2020-10-05 | 2021-09-02 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230335202A1 (ja) |
| JP (1) | JPWO2022074968A1 (ja) |
| CN (1) | CN116348955A (ja) |
| DE (1) | DE112021004285T5 (ja) |
| WO (1) | WO2022074968A1 (ja) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4427365B2 (ja) * | 2004-03-19 | 2010-03-03 | 株式会社東芝 | 半導体記憶装置 |
| JP4885743B2 (ja) * | 2006-07-28 | 2012-02-29 | ラピスセミコンダクタ株式会社 | 不揮発性半導体記憶装置 |
| JP5368266B2 (ja) | 2009-11-11 | 2013-12-18 | ローム株式会社 | 半導体不揮発記憶回路 |
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2021
- 2021-09-02 WO PCT/JP2021/032241 patent/WO2022074968A1/ja active Application Filing
- 2021-09-02 US US18/027,268 patent/US20230335202A1/en active Pending
- 2021-09-02 CN CN202180068204.7A patent/CN116348955A/zh active Pending
- 2021-09-02 JP JP2022555305A patent/JPWO2022074968A1/ja active Pending
- 2021-09-02 DE DE112021004285.8T patent/DE112021004285T5/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022074968A1 (ja) | 2022-04-14 |
| US20230335202A1 (en) | 2023-10-19 |
| DE112021004285T5 (de) | 2023-06-15 |
| CN116348955A (zh) | 2023-06-27 |