JPWO2022057847A5 - - Google Patents

Description

The present invention relates to the technical field of semiconductor processing equipment, and specifically relates to a collection unit and a semiconductor pre-cleaning chamber.

Plasma devices are widely applied to manufacturing processes such as semiconductor chip manufacturing, packaging, LED (light emitting diodes), and flat panel displays. The discharge types of plasma devices applied in the prior art include direct current discharge, capacitively coupled discharge, inductively coupled discharge, and electron cyclotron resonance discharge, as well as physical vapor deposition (PVD), plasma etching, and chemical vapor deposition (CVD). It is widely applied in applications such as Vapor Deposition).

In the prior art, after completing processes such as integrated circuit (IC) manufacturing, TSV (Through Silicon Via, and Packaging) on a wafer, the wafer is generally reserved. It must be cleaned and then a thin film of metal such as aluminum, copper, etc. is deposited by magnetron sputtering to form metal contacts, metal interconnect lines, etc. The pre-cleaning process is performed in a semiconductor pre-cleaning chamber (e.g., pre-cleaning chamber) using Ar (argon gas) to generate a large amount of active groups such as electrons, ions, excited atoms, molecules and free radicals. Gases such as He (helium gas) and H ₂ (hydrogen gas) are excited into plasma, and these active groups cause various chemical reactions and physical impacts on the wafer surface, thereby removing impurities from the wafer surface. , which facilitates the efficient proceeding of the subsequent physical vapor deposition process and significantly increases the adhesion of the deposited film, otherwise the impurities on the wafer surface would significantly increase the resistance of the circuit, and this This increases the heat loss of the circuit and further reduces the performance of the chip.

However, the semiconductor pre-cleaning chamber in the prior art has a low trapping effect on particulate impurities, and the remaining particulate impurities tend to contaminate the inner wall surface of the semiconductor pre-cleaning chamber, and the contaminated semiconductor pre-cleaning chamber remains unused after the pre-cleaning. The risk of secondary contamination of wafers is also relatively high.

The present invention is intended to solve at least one of the technical problems in the prior art, in that semiconductor pre-cleaning chambers in the prior art have a low trapping effect of particulate impurities, and the remaining particulate impurities are removed from the semiconductor pre-cleaning chamber. In order to solve the technical problem of easily contaminating the inner wall surface of the wafer and having a relatively high risk of secondary contamination of the wafer, a collection unit and a semiconductor pre-cleaning chamber are provided.

A first object of the present invention is to provide a collection unit for collecting particulate impurities in a semiconductor pre-cleaning chamber, the collection unit having an interval in the semiconductor pre-cleaning chamber. A protection plate and a collection plate are provided, the protection plate having an annular shape, and the protection plate having a plurality of first through holes through which the process gas in the semiconductor pre-cleaning chamber passes. ,
The collection plate is located on the exhaust end side of the first through hole, and is for capturing at least a portion of particulate impurities in the semiconductor pre-cleaning chamber that have passed through the first through hole.

Furthermore, the collection plate has an annular shape and is installed opposite to the protection plate , and the orthographic projections of all the first through holes on the protection plate on a horizontal plane are all the same as the horizontal plane of the collection plate. is within the orthographic projection of .

Furthermore, the surface of the collection plate facing the protection plate is a plane, and the planes are mutually parallel to the protection plate or inclined with respect to the protection plate .

Furthermore, the collection plate has a recessed structure on a surface facing the protection plate .

Furthermore, the recessed structure includes an annular groove provided along the circumferential direction of the collection plate.

Furthermore, the longitudinal cross-sectional shape of the annular groove includes a rectangle, an arc, or a triangle.

Furthermore, the outer peripheral edge of the collection plate has an annular protrusion extending in a direction proximate to the protection plate , and between an end of the annular protrusion proximate to the protection plate and the protection plate . Has a gap.

Furthermore, the surface of the collection plate facing the protection plate is a roughened surface.

Furthermore, the collection unit further includes a distance adjustment structure for adjusting the distance between the collection plate and the protection plate .

Furthermore, the distance adjustment structure includes at least one distance adjustment member, and the at least one distance adjustment member is installed between the collection plate and the protection plate , and is arranged on an inner peripheral edge or an outer peripheral edge of the protection plate . The distance between the collection plate and the protection plate is adjusted by setting the number and/or thickness of the distance adjustment members.

Furthermore, a connection part is further installed on the collection plate, the connection part is installed on an inner peripheral edge or an outer peripheral edge of the collection plate, and the connection part and the protection plate include a connecting part along the circumferential direction of the protection plate . A plurality of spaced screw holes are correspondingly installed,
The collection unit further includes a plurality of tightening screws, and each of the tightening screws is threadedly connected to each of the screw holes in a one-to-one correspondence to fixedly connect the connecting portion and the protection plate . It is for.

Furthermore, at least two of the collection plates are installed at intervals along the direction away from the protection plate , and of the at least two collection plates, the collection plate is furthest from the protection plate. In addition, a plurality of second through holes are installed in each of the remaining collection plates, and the axes of the second through holes on two adjacent collection plates do not overlap, and the most The axis of the second through hole on the nearby collection plate does not overlap with the axis of the first through hole on the protection plate .

A second object of the present invention is to provide a semiconductor pre-cleaning chamber, which includes a cavity, a Faraday cylinder installed in the cavity, a base for placing a wafer, and the present invention. the collection unit according to the invention, wherein when the protection plate in the collection unit is mounted on the base and the base is in a process position, the space inside the cavity is divided into an upper sub-cavity and a lower sub-cavity. The protection plate is fitted into the Faraday cylinder so as to be divided into two parts.

The present invention has the following beneficial effects.

A collection unit according to the present invention includes a protection plate and a collection plate that are spaced apart from each other in a semiconductor pre-cleaning chamber, and the protection plate is wrapped around a base in the semiconductor pre-cleaning chamber. The protective plate has a plurality of first through holes through which the process gas in the semiconductor pre-cleaning chamber passes, and the hole wall of the first through hole is configured to allow air flow. The collection plate is located on the exhaust end side of the first through hole to collect a small amount of particulate impurities contained in the semiconductor pre-cleaning chamber that has passed through the first through hole. The objective is to capture at least a portion of the Since the collecting plate is opposite to the exhaust direction of the first through-hole, the air flow containing a large amount of particulate impurities collides with the surface of the collecting plate, thereby transferring the particulate impurities to the surface of the collecting plate. The particulate impurities remaining in the pre-cleaning chamber can be effectively collected, and the particulate impurities left in the pre-cleaning chamber can be significantly reduced, eliminating the residue, making it difficult to contaminate the inner wall surface of the semiconductor pre-cleaning chamber, and preventing secondary contamination of wafers. reduce the risk of Moreover, when the collection unit according to the present invention needs to be cleaned, it can be removed and cleaned, making it highly maintainable.

Since the semiconductor pre-cleaning chamber according to the present invention has all the advantages of the above-mentioned collection unit, a detailed description will be omitted here.

In order to explain the embodiments of the present invention or the technical solutions of the prior art more clearly, the drawings necessary for the description of the embodiments or the prior art are briefly described below, but obviously the drawings described below are simply A person skilled in the art can further derive other drawings based on these drawings without any creative effort.
1 is a schematic structural diagram of a semiconductor pre-cleaning chamber according to an embodiment of the present invention; FIG. It is a structural schematic diagram of the 2nd form of the collection unit based on the Example of this invention. It is a structural schematic diagram of the 3rd form of the collection unit based on the Example of this invention. It is a structural schematic diagram of the 4th form of the collection unit based on the Example of this invention. It is a structural schematic diagram of the 5th form of the collection unit based on the Example of this invention. It is a structural schematic diagram of the 6th form of the collection unit based on the Example of this invention. It is a side cross-sectional schematic diagram of the 2nd form of the collection plate of the collection unit based on the Example of this invention. It is a side cross-sectional schematic diagram of the 3rd form of the collection plate of the collection unit based on the Example of this invention. It is a side cross-sectional schematic diagram of the 4th form of the collection plate of the collection unit based on the Example of this invention. FIG. 3 is a schematic bottom view of a first form of a protection plate of a collection unit according to an example of the present invention. FIG. 7 is a schematic bottom view of a second form of the protection plate of the collection unit according to the example of the present invention. It is a side cross-sectional schematic diagram of the 3rd form of the protection plate of the collection unit based on the Example of this invention. It is a side cross-sectional schematic diagram of the 4th form of the protection plate of the collection unit based on the Example of this invention.

In order to make the above objects, features and advantages of the present invention clearer and easier to understand, specific embodiments of the present invention will be described in detail below with reference to the drawings. As will be understood, the specific examples described herein are for purposes of interpreting the invention only and are not intended to limit the invention.

This embodiment provides a semiconductor pre-cleaning chamber, and as shown in FIG. 590 and a collection unit configured to divide the space within the cavity 510 into an upper subcavity and a lower subcavity when the collection unit is housed in the base 590 and the base 590 is in the process position. Then, the protection plate 100 in the collection unit fits into the Faraday cylinder 560.

In this embodiment, the semiconductor pre-cleaning chamber further includes a first metal ring 521, a second metal ring 522, a coil 530, a coil shielding box 540, a coupling window 550, a cover plate 570, a quartz ring 580, an upper electrode high frequency power source 610, and an upper electrode high frequency power source 610. It may also include an electrode adapter 620, a lower electrode high frequency power source 630, a lower electrode adapter 640, a vacuum pump 700, and the like. It should be noted that the above-mentioned structure other than the collection unit and the corresponding operating principles are all mature prior art, and there is nothing to improve on them in the present application, so a detailed explanation will be omitted here.

In the semiconductor pre-cleaning chamber according to the present application, when performing a process, the wafer 800 is placed on the base 590, the upper electrode high frequency power source 610 applies high frequency power to the coil 530 through the upper electrode adapter 620, and the high frequency energy is applied to the upper part by the Faraday cylinder 560. Coupled into the subcavity, thereby exciting a process gas (e.g., argon gas) into a plasma, a bottom electrode RF power source 630 applies RF power to the base 590 by a bottom electrode adapter 640 to provide a RF self-bias to the base 590. The wafer 800 is generated and further plasma is attracted to apply a physical impact to the wafer 800, or at the same time, a chemical reaction is performed to remove impurities on the surface of the wafer. Particulate impurities from the process enter the lower sub-cavity from the first through hole 110 on the protection plate 100, and in this process, a large amount of particulate impurities are captured and collected by the collection plate 210. Remaining particulate impurities that have not been captured and collected by the vacuum pump 700 are sucked out and collected by the vacuum pump 700.

The collection unit according to this embodiment will be explained in detail below.

The collection unit according to this embodiment is for collecting particulate impurities in a semiconductor pre-cleaning chamber, and as shown in FIG. The protection plate 100 has an annular shape, and specifically, the protection plate 100 is provided with a center through hole 120, and the protection plate 100 is connected to the base 590 through the center through hole 120. will be established. In addition, a plurality of first through holes 110 are installed in the protection plate 100 through which the process gas in the semiconductor pre-cleaning chamber passes, that is, the process gas flows from the upper sub-cavity to the lower sub-cavity through each of the first through holes 110. can enter.

In this embodiment, as shown in FIG. 1, the first through hole 110 is a straight through hole with a circular cross-sectional shape. However, in other embodiments of the present application, the first through hole 110 may have another shape, and as shown in FIG. 11, the cross-sectional shape of the first through hole 110 may be further rectangular. As shown in FIG. 12, the first through hole 110 may be a polygonal hole, and as shown in FIG. 13, the first through hole 110 may be an inclined hole.

Note that regardless of the shape of the first through hole 110, the hole diameter of the first through hole 110 of the protection plate 100 is set to meet the requirement that plasma cannot pass through. It can effectively prevent the lower sub-cavity from entering and igniting.

In this embodiment, as shown in FIG . uniformly distributed along the direction. This arrangement ensures that the airflow and particulate impurities in the upper subcavity stably and regularly flow into the first through hole 110 . Naturally, in other embodiments of the present application, there is no restriction on the number of rounds of the first through holes 110, the number of first through holes 110 per round, whether they are uniformly arranged, etc. Good too.

The collection plate 210 is located on the exhaust end side of the first through hole 110, that is, opposite to the exhaust direction of the first through hole 110, and collects particulate impurities in the semiconductor pre-cleaning chamber that have passed through the first through hole 110. The purpose is to capture at least a portion of it. Since the collection plate 210 is opposite to the exhaust direction of the first through hole 110, the airflow containing a large amount of particulate impurities collides with the surface of the collection plate 210, thereby removing the particulate impurities from the collection plate. The particulate impurities remaining in the pre-cleaning chamber can be effectively collected on the surface of the wafer 800, and the particulate impurities left in the pre-cleaning chamber can be significantly reduced, thereby eliminating the residue, and further preventing contaminating the inner wall surface of the semiconductor pre-cleaning chamber. reduce the risk of cross-contamination. Moreover, when the collection unit according to the present invention needs to be cleaned, it can be removed and cleaned, making it highly maintainable.

In some alternative embodiments, collection plate 210 and protection plate 100 are installed in parallel. Naturally, in actual applications, the collection plate 210 and the protection plate 100 may form an included angle.

In some optional embodiments, the collection plate 210 has an annular shape and is installed opposite the protection plate 100 , and the orthographic projection of all the first through holes 110 on the protection plate 100 on the horizontal plane is is also in the orthographic projection of the collection plate 210 in the horizontal plane. In this way, it is possible to ensure that all the gases flowing out from all the first through holes 110 collide with the surface of the collection plate 210, and the effect of collecting particulate impurities can be further enhanced.

In this embodiment, as shown in FIG. 1, the outer diameters of the collection plate 210 and the protection plate 100 are equal, that is, the orthogonal projection contours of both in the horizontal plane overlap. However, in other embodiments of the present application, the orthographic contours of the collection plate 210 and the protection plate 100 in the horizontal plane may not overlap, for example, as shown in FIG. is larger than the outer diameter of the protection plate 100, that is, the orthographic profile of the collection plate 210 on the horizontal plane is outside the orthographic profile of the protection plate 100, and for example, as shown in FIG. The outer diameter of 210 is smaller than the outer diameter of the protection plate 100, that is, the orthographic profile of the collection plate 210 in the horizontal plane is within the orthographic profile of the protection plate 100. Regardless of the orthogonal projection of both the protection plate 100 and the collection plate 210 on the horizontal plane, the orthographic projection of all the first through holes 110 on the protection plate 100 on the horizontal plane is the orthogonal projection of the collection plate 210 on the horizontal plane. If the projection is within the projection, it is possible to ensure that the gas flowing out from all the first through holes 110 collides with the surface of the collection plate 210 .

In this embodiment, as shown in FIG. 1, the surface of the collection plate 210 facing the protection plate 100 is a plane, and the planes are parallel to the protection plate 100. If installed in this manner, the particulate impurities carried out from the first through hole 110 can reliably collide with the surface of the collection plate 210, thereby facilitating the collection of the particulate impurities. Naturally, in practical applications, the plane may also be inclined with respect to the protection plate 100.

However, in other embodiments of the present application, the surface of the collection plate 210 facing the protection plate 100 is not limited to a flat surface, but may have a concave structure. The provision of the recessed structure contributes to the repulsion and collision of particulate impurities between the mutually opposing surfaces of the protection plate 100 and the collection plate 210, thereby improving the collection rate of particulate impurities. Contribute. Specifically, as shown in FIG. 7, the concave structure includes an annular groove 211 provided along the circumferential direction of the collection plate 210, and the longitudinal cross-sectional shape of the annular groove 211 is rectangular, arcuate, or triangular. For example, the annular groove 211 shown in FIG. 7 has a rectangular longitudinal cross-sectional shape. The annular groove 211 shown in FIG. 8 has an arcuate longitudinal cross-sectional shape. The annular groove 211 shown in FIG. 98 has a triangular longitudinal cross-sectional shape. Further, the longitudinal cross-sectional shape of the annular groove 211 may be further shaped into a stepped shape (not shown).

In some selectable embodiments, as shown in FIG. 8, the collection plate 210 has an annular protrusion 212 on the outer periphery that extends in a direction approaching the protection plate 100. There is a gap between the end of 212 adjacent to the protection plate 100 and the protection plate 100. If installed in this way, it will contribute to the repulsion of particulate impurities between the collection plate 210 and the protection plate 100, and will also contribute to the capture and collection of particulate impurities, increasing the collection rate. enhance

In some alternative embodiments, the collection unit further includes a distance adjustment structure for adjusting the distance between the collection plate 210 and the protection plate 100. By adjusting the distance between the two, the flow guidance between the two, ie the ability to pass gas between the two, can be adjusted, and the air supply amount and air supply rate of the semiconductor pre-cleaning chamber can also be adjusted. Specifically, the smaller the distance between the collection plate 210 and the protection plate 100, the slower the air supply speed and the higher the collection rate; The greater the distance, the faster the air supply velocity and the lower the collection rate. Based on this, if there is a relatively high requirement for particulate impurities to remain on the surface of the wafer 800, the air supply speed can be reduced by appropriately shortening the distance between the collection plate 210 and the protection plate 100. , this increases the collection rate, but if the requirement for particulate impurity residue on the surface of the wafer 800 is relatively low or there is a constant requirement on the air supply rate, the air supply rate may be accelerated. The distance between the collection plate 210 and the protection plate 100 can be appropriately extended.

In some alternative embodiments, the distance between collection plate 210 and protection plate 100 is greater than or equal to 3 mm and less than or equal to 20 mm.

In addition, adjusting the distance between the collection plate 210 and the protection plate 100 using the distance adjustment structure can be applied to different process steps, and the semiconductor pre-cleaning chamber can integrate the functions of multiple processing devices. This can reduce equipment costs.

The distance adjustment structure may have a plurality of types of structures. For example, as shown in FIGS. 1 to 4, the distance adjustment structure may include at least one distance adjustment member 300, and at least one distance adjustment structure. A member 300 is installed between the collection plate 210 and the protection plate 100, and is located at the inner or outer peripheral edge of the protection plate 100, and the collection can be performed by setting the number and/or thickness of the distance adjustment members 300. The distance between plate 210 and protection plate 100 is adjusted. The distance adjustment member 300 is, for example, a washer, and as an option, the inner diameter of the washer is the same as the diameter of the central through hole 120.

The surfaces of the distance adjustment member 300 and the collection plate 210 that face the protection plate 100 are roughened surfaces. For example, the surface of the collection plate 210 facing the protection plate 100 may be treated with sandblasting, thermal spraying, or the like. This arrangement contributes to trapping and storing particulate impurities on the surface of the collection plate 210, thereby further enhancing the collection effect.

In this embodiment, as shown in FIG. 1, there is one collection plate 210.

However, in other embodiments of the present application, as shown in FIGS. 5 and 6, the number of collection plates 210 is not limited to one, and the number of collection plates 210 may be at least two. In addition to the collection plate 210 that is installed at intervals in the direction away from the protection plate 100 and that is farthest from the protection plate 100 among the at least two collection plates 210, the remaining collection plates 210 In both cases, a plurality of second through holes 215 are installed, and the axes of the second through holes 215 on two adjacent collection plates 210 do not overlap, and the second through holes 215 on the collection plate 210 closest to the protection plate 100 The axis of the second through hole 215 and the axis of the first through hole 110 on the protection plate 100 do not overlap.

By installing a plurality of collection plates 210, particulate impurities can be filtered and collected one layer at a time, thereby further increasing the collection rate of particulate impurities. At the same time, by ensuring that the axis of the second through hole 215 on the collection plate 210 closest to the protection plate 100 and the axis of the first through hole 110 on the protection plate 100 do not overlap, the first through hole It is possible to effectively avoid directly transporting the particulate impurities carried out from the holes 110 downward through the second through-holes 215 of the collection plate 210 closest to the protection plate 100, so that the particulate impurities are Although it is possible to increase the probability of collision with the surface of the collection plate 210 and contribute to improving the collection rate of particulate impurities, the axis of the second through hole 215 on two adjacent collection plates 210 By preventing the particles from overlapping, the particulate impurities carried out from the collection plate 210 are effectively prevented from being directly transported downward from the second through holes 215 of the adjacent collection plate 210 in the lower layer. This increases the probability that particulate impurities collide with the surface of the lower collection plate 210, thereby contributing to the lower collection plate 210 capturing the particulate impurities, and increasing the probability that the particulate impurities collide with the surface of the lower collection plate 210. Effectively increasing the utilization rate, and improving the utilization rate of the collection plates 210 of each layer contributes to improving the collection rate of all the collection plates collecting particulate impurities as a whole.

In another embodiment of the present application, as shown in FIGS. 5 and 6, when there are at least two collection plates 210, two adjacent collection plates 210 may also be located between two adjacent collection plates 210. A distance adjustment member 300 may be installed to adjust the distance between them.

In some alternative embodiments, as shown in FIGS. 2 and 3, the collection plate 210 is further provided with a connection 220, the connection 220 is located on the inner periphery of the collection plate 210, and a specific Specifically, as shown in FIGS. 2 and 3, the connecting portion 220 is a ring body, the outer diameter of the ring body is smaller than the outer diameter of the collection plate 210 and the protection plate 100, and the inner diameter of the ring body is smaller than the outer diameter of the collection plate 210 and the protection plate 100. It has the same diameter as the center through hole 120, and the ring body is installed coaxially with the center through hole 120. In such a case, there is a gap between the portion of the collection plate 210 located outside the connection portion 220 and the protection plate 100 through which air flows out during the process.

In addition, a plurality of screw holes 213 are installed in the connection part 220, the distance adjustment member 300, and the protection plate 100 in correspondence with each other at intervals along the circumferential direction of the protection plate 100. As shown in FIG. 1, the collection unit further includes a plurality of tightening screws 214, each tightening screw 214 is threadedly connected to each screw hole 213 in one-to-one correspondence, and a connecting portion 220, a distance adjusting member 300 and the protection plate 100 in a fixed manner.

In some other optional embodiments, as shown in FIG. 4, the connecting part 220 may also be installed on the outer periphery of the collection plate 210, specifically, the connecting part 220 is a ring body. , the outer diameter of the ring body is equal to the outer diameter of the protection plate 100, the inner diameter of the ring body is larger than the diameter of the central through hole 120, and the ring body is installed coaxially with the central through hole 120. In such a case, there is a gap between the part of the collection plate 210 located inside the connection part 220 and the protection plate 100 for the airflow to flow out during the process, and then the airflow flows through the collection plate. It can flow out of the central hole of 210.

In another embodiment of the present application, as shown in FIGS. 5 and 6, when the number of collection plates 210 is at least two, each collection plate 210 is provided with a connection part 220, and the protection plate 10 The collection plate 210 closest to is the first collection plate, the remaining collection plates 210 are the second collection plates, and the connecting portion 220 on the first collection plate connects the first collection plate and the protection plate. 100, and a connecting portion 220 on the second collection plate is installed between two adjacent second collection plates.

Optionally, the connections 220 on at least two collection plates 210 may both be located at the inner or outer periphery of the collection plates 210, or the connections 220 on some collection plates 210 may be The connection parts 220 on the remaining collection plates 210 may be installed on the outer periphery of the collection plate 210 while the connection parts 220 on the remaining collection plates 210 may be installed on the inner periphery of the collection plate 210 . For example, as shown in FIGS. 5 and 6, for the first collection plate of the collection plates 210 that is closest to the protection plate 100, the connection part 220 is installed on the outer periphery of the collection plate 210, so that the airflow is protected. The airflow can be prevented from passing between the plate 100 and the first collection plate, and the airflow can be allowed to flow out from each second through hole 215, and the connection 220 on the second collection plate can be prevented from passing between the plate 100 and the first collection plate. It is installed on the inner peripheral edge of the plate 210. Moreover, instead of installing a screw hole in the connection part 220 on the first collection plate, a screw hole is provided in the first collection plate at a position corresponding to the screw hole 213 of the connection part 220 on the second collection plate. A fixed connection between the first collection plate and the second collection plate can be realized by means of the tightening screw 314.

Finally, it needs to be further explained that, as used herein, related terms such as "first" and "second" are only used to distinguish one entity or operation from another. It does not necessarily require or imply that any such actual relationship or order exists between these entities or operations. and the terms "comprises," "includes," or any other variations thereof are intended to include non-exclusive inclusion whereby a process, method, article, or apparatus that includes a set of elements includes those elements. and may further include other elements not explicitly listed or may further include elements specific to such process, method, article or device.

The above description of the disclosed embodiments is used to enable any person skilled in the art to make or use the present invention. Various modifications to the embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Accordingly, this invention is not limited to the embodiments set forth herein, but is accorded the widest scope consistent with the principles and novel features disclosed herein.

100 protection plate
110 First through hole 120 Center through hole 210 Collection plate 211 Annular groove 212 Annular projection 213 Screw hole 214 Tightening screw 215 Second through hole 220 Connection portion 300 Distance adjustment member 510 Cavity 521 First metal ring 522 Second metal ring 530 Coil 540 Coil shielding box 550 Coupling window 560 Faraday cylinder 570 Cover plate 580 Quartz ring 590 Base 610 Upper electrode high frequency power supply 620 Upper electrode adapter 630 Lower electrode high frequency power supply 640 Lower electrode adapter 700 Vacuum pump 800 Wafer

Claims (13)

A collection unit for collecting particulate impurities in a semiconductor pre-cleaning chamber, the collection unit comprising:
A protection plate and a collection plate are installed at intervals in the semiconductor pre-cleaning chamber, and the protection plate has an annular shape, and the process gas in the semiconductor pre-cleaning chamber passes through the protection plate. A plurality of first through holes are installed,
The collection plate is located on the exhaust end side of the first through hole and is for capturing at least a portion of particulate impurities in the semiconductor pre-cleaning chamber that have passed through the first through hole. Characteristic collection unit. The collection plate has an annular shape and is installed opposite to the protection plate , and the orthographic projection of all the first through holes on the protection plate on the horizontal plane is the same as that of the collection plate on the horizontal plane. Collection unit according to claim 1, characterized in that it is in orthographic projection. 3. The collection according to claim 2, wherein the surface of the collection plate facing the protection plate is a flat surface, and the flat surfaces are mutually parallel to the protection plate or inclined with respect to the protection plate. unit. The collection unit according to claim 2, characterized in that a surface of the collection plate facing the protection plate has a concave structure. The collection unit according to claim 4, wherein the recessed structure includes an annular groove provided along the circumferential direction of the collection plate. 6. The collection unit according to claim 5, wherein the longitudinal cross-sectional shape of the annular groove includes a rectangular, arcuate, or triangular shape. The collecting plate has an annular projection extending toward the protection plate on the outer peripheral edge thereof, and a gap is provided between the end of the annular projection near the protection plate and the protection plate . The collection unit according to any one of claims 1 to 6, characterized in that the collection unit comprises: The collection unit according to any one of claims 1 to 6, wherein the surface of the collection plate facing the protection plate is a roughened surface. 7. The collection unit according to claim 1, further comprising a distance adjustment structure for adjusting a distance between the collection plate and the protection plate . The distance adjustment structure includes at least one distance adjustment member, and the at least one distance adjustment member is installed between the collection plate and the protection plate , and is located at an inner peripheral edge or an outer peripheral edge of the protection plate . 10. The collection unit according to claim 9, wherein the distance between the collection plate and the protection plate is adjusted by setting the number and/or thickness of the distance adjustment members. A connection part is further installed on the collection plate, the connection part is installed on the inner peripheral edge or the outer peripheral edge of the collection plate, and the connection part and the protection plate are provided with an interval along the circumferential direction of the protection plate . Multiple screw holes spaced apart are installed correspondingly,
The collection unit further includes a plurality of tightening screws, and each of the tightening screws is threadedly connected to each of the screw holes in a one-to-one correspondence to fixedly connect the connecting portion and the protection plate . The collection unit according to any one of claims 1 to 6, characterized in that the collection unit is for. The collection plates are at least two, and are installed at intervals along the direction away from the protection plate , and of the at least two collection plates, the collection plate other than the collection plate that is farthest from the protection plate . A plurality of second through holes are installed in each of the remaining collection plates, and the axes of the second through holes on two adjacent collection plates do not overlap and are closest to the protection plate. According to any one of claims 1 to 6, the axis of the second through hole on the collection plate and the axis of the first through hole on the protection plate do not overlap. collection unit. A semiconductor pre-cleaning chamber, comprising:
A cavity, a Faraday cylinder installed in the cavity, a base for placing a wafer, and a collection unit according to any one of claims 1 to 12, and in the collection unit. The protection plate is mounted on the base, and when the base is in a process position, the protection plate fits into the Faraday cylinder so as to divide the space within the cavity into an upper sub-cavity and a lower sub-cavity. A semiconductor pre-cleaning chamber characterized by: