JPWO2022024812A1 - - Google Patents

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Publication number
JPWO2022024812A1
JPWO2022024812A1 JP2022540186A JP2022540186A JPWO2022024812A1 JP WO2022024812 A1 JPWO2022024812 A1 JP WO2022024812A1 JP 2022540186 A JP2022540186 A JP 2022540186A JP 2022540186 A JP2022540186 A JP 2022540186A JP WO2022024812 A1 JPWO2022024812 A1 JP WO2022024812A1
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JP
Japan
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Pending
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JP2022540186A
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Publication date
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Publication of JPWO2022024812A1 publication Critical patent/JPWO2022024812A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2022540186A 2020-07-31 2021-07-16 Pending JPWO2022024812A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020131043 2020-07-31
PCT/JP2021/026789 WO2022024812A1 (ja) 2020-07-31 2021-07-16 ＳｉＣ半導体装置

Publications (1)

Publication Number Publication Date
JPWO2022024812A1 true JPWO2022024812A1 (ja) 2022-02-03

Family

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Family Applications (1)

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JP2022540186A Pending JPWO2022024812A1 (ja) 2020-07-31 2021-07-16

Country Status (5)

Country Link
US (1) US20230170410A1 (ja)
JP (1) JPWO2022024812A1 (ja)
CN (1) CN115699333A (ja)
DE (2) DE212021000196U1 (ja)
WO (1) WO2022024812A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024070164A1 (ja) * 2022-09-29 2024-04-04 ローム株式会社 半導体装置
WO2024101130A1 (ja) * 2022-11-08 2024-05-16 ローム株式会社 半導体装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257394B2 (ja) * 1996-04-04 2002-02-18 株式会社日立製作所 電圧駆動型半導体装置
JP5309428B2 (ja) * 2006-05-01 2013-10-09 富士電機株式会社 半導体装置
DE102018112344A1 (de) * 2017-05-29 2018-11-29 Infineon Technologies Ag Leistungshalbleitervorrichtung mit dV/dt-Steuerbarkeit und Quergrabenanordnung
JP6664445B2 (ja) * 2018-08-10 2020-03-13 ローム株式会社 ＳｉＣ半導体装置
JP7283753B2 (ja) 2020-02-25 2023-05-30 昌秀 神田 透明ジグソーパズル

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DE212021000196U1 (de) 2022-01-17
CN115699333A (zh) 2023-02-03
US20230170410A1 (en) 2023-06-01
DE112021002151T5 (de) 2023-01-26
WO2022024812A1 (ja) 2022-02-03

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