JPWO2022019167A1 - - Google Patents
Info
- Publication number
- JPWO2022019167A1 JPWO2022019167A1 JP2022537934A JP2022537934A JPWO2022019167A1 JP WO2022019167 A1 JPWO2022019167 A1 JP WO2022019167A1 JP 2022537934 A JP2022537934 A JP 2022537934A JP 2022537934 A JP2022537934 A JP 2022537934A JP WO2022019167 A1 JPWO2022019167 A1 JP WO2022019167A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0029—Protection against environmental influences not provided for in groups B81B7/0012 - B81B7/0025
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0064—Packages or encapsulation for protecting against electromagnetic or electrostatic interferences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/069—Protection against electromagnetic or electrostatic interferences
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/04—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/016—Passivation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020124567 | 2020-07-21 | ||
| JP2020124567 | 2020-07-21 | ||
| PCT/JP2021/026151 WO2022019167A1 (ja) | 2020-07-21 | 2021-07-12 | 圧力センサ構造、圧力センサ装置および圧力センサ構造の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022019167A1 true JPWO2022019167A1 (US07494231-20090224-C00006.png) | 2022-01-27 |
| JPWO2022019167A5 JPWO2022019167A5 (US07494231-20090224-C00006.png) | 2023-04-13 |
| JP7485045B2 JP7485045B2 (ja) | 2024-05-16 |
Family
ID=79728710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022537934A Active JP7485045B2 (ja) | 2020-07-21 | 2021-07-12 | 圧力センサ構造、圧力センサ装置および圧力センサ構造の製造方法 |
Country Status (4)
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023058660A1 (ja) * | 2021-10-05 | 2023-04-13 | 株式会社村田製作所 | 圧力センサ構造および圧力センサ装置 |
| CN117129119A (zh) * | 2023-10-26 | 2023-11-28 | 西安中星测控有限公司 | 一种基于玻璃熔合技术的mcs压力传感器及其制做方法 |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6056244U (ja) * | 1983-09-26 | 1985-04-19 | 住友電気工業株式会社 | 半導体圧力センサ |
| JPS6432U (US07494231-20090224-C00006.png) * | 1987-06-19 | 1989-01-05 | ||
| JPH0749278A (ja) * | 1993-08-05 | 1995-02-21 | Omron Corp | 圧力センサ |
| JPH10501887A (ja) * | 1994-04-14 | 1998-02-17 | セカツプ・アー・ベー | 安定化圧力センサ |
| JP2004513356A (ja) * | 2000-11-10 | 2004-04-30 | ヴァイサラ オーワイジェー | 表面微細加工した絶対圧力センサとその製造方法 |
| JP2005077134A (ja) * | 2003-08-28 | 2005-03-24 | Kyocera Corp | 圧力検出装置用パッケージ |
| US20050262947A1 (en) * | 2004-03-08 | 2005-12-01 | Infineon Technologies Ag | Pressure sensor and method for operating a pressure sensor |
| JP2010139495A (ja) * | 2008-11-13 | 2010-06-24 | Denso Corp | 半導体装置およびその製造方法 |
| JP2011137818A (ja) * | 2009-12-28 | 2011-07-14 | General Electric Co <Ge> | センサ製造方法 |
| JP2012210702A (ja) * | 2011-03-30 | 2012-11-01 | Pixart Imaging Inc | マイクロ電気機械システムセンサおよびその製造方法 |
| JP2015059831A (ja) * | 2013-09-19 | 2015-03-30 | 株式会社デンソー | 電子装置 |
| JP2016125927A (ja) * | 2015-01-06 | 2016-07-11 | セイコーエプソン株式会社 | 電子デバイス、電子デバイスの製造方法、物理量センサー、電子機器および移動体 |
| JP2017506329A (ja) * | 2014-01-17 | 2017-03-02 | 株式会社村田製作所 | 改良された圧力センサ構造 |
-
2021
- 2021-07-12 CN CN202180059986.8A patent/CN116134625A/zh active Pending
- 2021-07-12 WO PCT/JP2021/026151 patent/WO2022019167A1/ja active Application Filing
- 2021-07-12 JP JP2022537934A patent/JP7485045B2/ja active Active
-
2023
- 2023-01-05 US US18/093,354 patent/US20230146158A1/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6056244U (ja) * | 1983-09-26 | 1985-04-19 | 住友電気工業株式会社 | 半導体圧力センサ |
| JPS6432U (US07494231-20090224-C00006.png) * | 1987-06-19 | 1989-01-05 | ||
| JPH0749278A (ja) * | 1993-08-05 | 1995-02-21 | Omron Corp | 圧力センサ |
| JPH10501887A (ja) * | 1994-04-14 | 1998-02-17 | セカツプ・アー・ベー | 安定化圧力センサ |
| JP2004513356A (ja) * | 2000-11-10 | 2004-04-30 | ヴァイサラ オーワイジェー | 表面微細加工した絶対圧力センサとその製造方法 |
| JP2005077134A (ja) * | 2003-08-28 | 2005-03-24 | Kyocera Corp | 圧力検出装置用パッケージ |
| US20050262947A1 (en) * | 2004-03-08 | 2005-12-01 | Infineon Technologies Ag | Pressure sensor and method for operating a pressure sensor |
| JP2010139495A (ja) * | 2008-11-13 | 2010-06-24 | Denso Corp | 半導体装置およびその製造方法 |
| JP2011137818A (ja) * | 2009-12-28 | 2011-07-14 | General Electric Co <Ge> | センサ製造方法 |
| JP2012210702A (ja) * | 2011-03-30 | 2012-11-01 | Pixart Imaging Inc | マイクロ電気機械システムセンサおよびその製造方法 |
| JP2015059831A (ja) * | 2013-09-19 | 2015-03-30 | 株式会社デンソー | 電子装置 |
| JP2017506329A (ja) * | 2014-01-17 | 2017-03-02 | 株式会社村田製作所 | 改良された圧力センサ構造 |
| JP2016125927A (ja) * | 2015-01-06 | 2016-07-11 | セイコーエプソン株式会社 | 電子デバイス、電子デバイスの製造方法、物理量センサー、電子機器および移動体 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7485045B2 (ja) | 2024-05-16 |
| WO2022019167A1 (ja) | 2022-01-27 |
| US20230146158A1 (en) | 2023-05-11 |
| CN116134625A (zh) | 2023-05-16 |
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