JPWO2022003925A1 - - Google Patents

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Publication number
JPWO2022003925A1
JPWO2022003925A1 JP2022532973A JP2022532973A JPWO2022003925A1 JP WO2022003925 A1 JPWO2022003925 A1 JP WO2022003925A1 JP 2022532973 A JP2022532973 A JP 2022532973A JP 2022532973 A JP2022532973 A JP 2022532973A JP WO2022003925 A1 JPWO2022003925 A1 JP WO2022003925A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022532973A
Other versions
JP7397376B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022003925A1 publication Critical patent/JPWO2022003925A1/ja
Application granted granted Critical
Publication of JP7397376B2 publication Critical patent/JP7397376B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2022532973A 2020-07-02 2020-07-02 光送信器 Active JP7397376B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/026103 WO2022003925A1 (ja) 2020-07-02 2020-07-02 光送信器

Publications (2)

Publication Number Publication Date
JPWO2022003925A1 true JPWO2022003925A1 (ja) 2022-01-06
JP7397376B2 JP7397376B2 (ja) 2023-12-13

Family

ID=79315850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022532973A Active JP7397376B2 (ja) 2020-07-02 2020-07-02 光送信器

Country Status (3)

Country Link
US (1) US20230268713A1 (ja)
JP (1) JP7397376B2 (ja)
WO (1) WO2022003925A1 (ja)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06265958A (ja) * 1993-03-15 1994-09-22 Canon Inc 集積型光デバイスおよびそれを用いた光通信ネットワーク
JP2003513297A (ja) * 1999-09-02 2003-04-08 アジリティー コミュニケイションズ インコーポレイテッド 集積変調器を有する光電子レーザを用いて光波長を変換する方法
US20050006654A1 (en) * 2003-07-08 2005-01-13 Byung-Kwon Kang Semiconductor monolithic integrated optical transmitter
US20130308178A1 (en) * 2012-05-17 2013-11-21 Finisar Corporation Co-modulation of DBR Laser and Integrated Optical Amplifier
US20150125159A1 (en) * 2013-11-05 2015-05-07 Electronics And Telecommunications Research Institute Reflective colorless optical transmitter
JP2016072608A (ja) * 2014-09-30 2016-05-09 三菱電機株式会社 半導体レーザおよびこれを備える光集積光源
US20180090576A1 (en) * 2014-02-18 2018-03-29 Samsung Electronics Co., Ltd. Laser device integrated with semiconductor optical amplifier on silicon substrate
JP2018206901A (ja) * 2017-06-01 2018-12-27 日本電信電話株式会社 光送信機
US10277008B1 (en) * 2017-12-15 2019-04-30 Electronics And Telecommunications Research Institute Tunable laser device and method for manufacturing the same
WO2019235235A1 (ja) * 2018-06-05 2019-12-12 日本電信電話株式会社 光送信機および多波長光送信機

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06265958A (ja) * 1993-03-15 1994-09-22 Canon Inc 集積型光デバイスおよびそれを用いた光通信ネットワーク
JP2003513297A (ja) * 1999-09-02 2003-04-08 アジリティー コミュニケイションズ インコーポレイテッド 集積変調器を有する光電子レーザを用いて光波長を変換する方法
US20050006654A1 (en) * 2003-07-08 2005-01-13 Byung-Kwon Kang Semiconductor monolithic integrated optical transmitter
US20130308178A1 (en) * 2012-05-17 2013-11-21 Finisar Corporation Co-modulation of DBR Laser and Integrated Optical Amplifier
US20150125159A1 (en) * 2013-11-05 2015-05-07 Electronics And Telecommunications Research Institute Reflective colorless optical transmitter
US20180090576A1 (en) * 2014-02-18 2018-03-29 Samsung Electronics Co., Ltd. Laser device integrated with semiconductor optical amplifier on silicon substrate
JP2016072608A (ja) * 2014-09-30 2016-05-09 三菱電機株式会社 半導体レーザおよびこれを備える光集積光源
JP2018206901A (ja) * 2017-06-01 2018-12-27 日本電信電話株式会社 光送信機
US10277008B1 (en) * 2017-12-15 2019-04-30 Electronics And Telecommunications Research Institute Tunable laser device and method for manufacturing the same
WO2019235235A1 (ja) * 2018-06-05 2019-12-12 日本電信電話株式会社 光送信機および多波長光送信機

Also Published As

Publication number Publication date
WO2022003925A1 (ja) 2022-01-06
JP7397376B2 (ja) 2023-12-13
US20230268713A1 (en) 2023-08-24

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