JPWO2021210398A1 - - Google Patents

Info

Publication number
JPWO2021210398A1
JPWO2021210398A1 JP2022515293A JP2022515293A JPWO2021210398A1 JP WO2021210398 A1 JPWO2021210398 A1 JP WO2021210398A1 JP 2022515293 A JP2022515293 A JP 2022515293A JP 2022515293 A JP2022515293 A JP 2022515293A JP WO2021210398 A1 JPWO2021210398 A1 JP WO2021210398A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022515293A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021210398A1 publication Critical patent/JPWO2021210398A1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2022515293A 2020-04-14 2021-03-30 Pending JPWO2021210398A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020072555 2020-04-14
PCT/JP2021/013751 WO2021210398A1 (en) 2020-04-14 2021-03-30 Method for producing aluminum nitride substrate, aluminum nitride substrate, and method for suppressing introduction of dislocation into aluminum nitride growth layer

Publications (1)

Publication Number Publication Date
JPWO2021210398A1 true JPWO2021210398A1 (en) 2021-10-21

Family

ID=78083622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022515293A Pending JPWO2021210398A1 (en) 2020-04-14 2021-03-30

Country Status (6)

Country Link
US (1) US20230392282A1 (en)
EP (1) EP4137616A4 (en)
JP (1) JPWO2021210398A1 (en)
CN (1) CN115398047A (en)
TW (1) TW202146678A (en)
WO (1) WO2021210398A1 (en)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3139445B2 (en) * 1997-03-13 2001-02-26 日本電気株式会社 GaN-based semiconductor growth method and GaN-based semiconductor film
JP5024722B2 (en) * 2005-06-06 2012-09-12 住友電気工業株式会社 Nitride semiconductor substrate and manufacturing method thereof
JP4690906B2 (en) 2006-02-21 2011-06-01 新日本製鐵株式会社 Seed crystal for growing silicon carbide single crystal, method for producing the same, and method for producing silicon carbide single crystal
WO2009102033A1 (en) * 2008-02-15 2009-08-20 Mitsubishi Chemical Corporation Substrate for epitaxial growth, process for producing gan-base semiconductor film, gan-base semiconductor film, process for producing gan-base semiconductor luminescent element, and gan-base semiconductor luminescent element
JP2010042950A (en) * 2008-08-11 2010-02-25 Sumitomo Electric Ind Ltd METHOD FOR PRODUCING AlN CRYSTAL, METHOD FOR PRODUCING AlN SUBSTRATE AND METHOD FOR PRODUCING PIEZOELECTRIC VIBRATOR
WO2012093601A1 (en) * 2011-01-07 2012-07-12 三菱化学株式会社 EPITAXIAL GROWTH SUBSTRATE AND GaN LED DEVICE
JP6704387B2 (en) * 2015-03-18 2020-06-03 住友化学株式会社 Substrate for growing nitride semiconductor, method of manufacturing the same, semiconductor device, and method of manufacturing the same
JP2018056551A (en) * 2016-09-21 2018-04-05 豊田合成株式会社 Light-emitting element and method for manufacturing the same
JP6903857B2 (en) * 2017-06-02 2021-07-14 住友電工デバイス・イノベーション株式会社 Semiconductor substrate manufacturing method
JP6812333B2 (en) * 2017-12-08 2021-01-13 エア・ウォーター株式会社 Compound semiconductor substrate

Also Published As

Publication number Publication date
CN115398047A (en) 2022-11-25
US20230392282A1 (en) 2023-12-07
EP4137616A4 (en) 2024-05-22
EP4137616A1 (en) 2023-02-22
TW202146678A (en) 2021-12-16
WO2021210398A1 (en) 2021-10-21

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Effective date: 20220927

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