JPWO2021193406A1 - - Google Patents

Info

Publication number
JPWO2021193406A1
JPWO2021193406A1 JP2022510406A JP2022510406A JPWO2021193406A1 JP WO2021193406 A1 JPWO2021193406 A1 JP WO2021193406A1 JP 2022510406 A JP2022510406 A JP 2022510406A JP 2022510406 A JP2022510406 A JP 2022510406A JP WO2021193406 A1 JPWO2021193406 A1 JP WO2021193406A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022510406A
Other languages
Japanese (ja)
Other versions
JP7361202B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021193406A1 publication Critical patent/JPWO2021193406A1/ja
Application granted granted Critical
Publication of JP7361202B2 publication Critical patent/JP7361202B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2022510406A 2020-03-26 2021-03-19 Substrate processing equipment, gas supply equipment, cleaning method for raw material supply pipes, semiconductor device manufacturing method and program Active JP7361202B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020056119 2020-03-26
JP2020056119 2020-03-26
PCT/JP2021/011311 WO2021193406A1 (en) 2020-03-26 2021-03-19 Substrate treatment apparatus, gas supply device, method for cleaning raw material supply pipe, method for manufacturing semiconductor device, and program

Publications (2)

Publication Number Publication Date
JPWO2021193406A1 true JPWO2021193406A1 (en) 2021-09-30
JP7361202B2 JP7361202B2 (en) 2023-10-13

Family

ID=77890279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022510406A Active JP7361202B2 (en) 2020-03-26 2021-03-19 Substrate processing equipment, gas supply equipment, cleaning method for raw material supply pipes, semiconductor device manufacturing method and program

Country Status (2)

Country Link
JP (1) JP7361202B2 (en)
WO (1) WO2021193406A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817749A (en) * 1994-06-29 1996-01-19 Tokyo Electron Ltd Device for supplying liquid material to film formation processing chamber and method for using it and its pipe line structure
JPH1088349A (en) * 1996-09-18 1998-04-07 Anelva Corp Vapor phase growth system
JP2003303023A (en) * 2002-02-07 2003-10-24 Tokyo Electron Ltd Processing device and method of maintaining the device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817749A (en) * 1994-06-29 1996-01-19 Tokyo Electron Ltd Device for supplying liquid material to film formation processing chamber and method for using it and its pipe line structure
JPH1088349A (en) * 1996-09-18 1998-04-07 Anelva Corp Vapor phase growth system
JP2003303023A (en) * 2002-02-07 2003-10-24 Tokyo Electron Ltd Processing device and method of maintaining the device

Also Published As

Publication number Publication date
JP7361202B2 (en) 2023-10-13
WO2021193406A1 (en) 2021-09-30

Similar Documents

Publication Publication Date Title
BR112023005462A2 (en)
BR112023012656A2 (en)
BR112022024743A2 (en)
BR102021015500A2 (en)
BR112022009896A2 (en)
BR102021007058A2 (en)
BR102020022030A2 (en)
BR112023011738A2 (en)
BR112023016292A2 (en)
BR112023004146A2 (en)
BR112023011539A2 (en)
BR112023011610A2 (en)
BR112023008976A2 (en)
BR112023009656A2 (en)
BR112023006729A2 (en)
BR102021015566A2 (en)
BR102021015450A8 (en)
BR102021015220A2 (en)
BR102021015247A2 (en)
BR102021014056A2 (en)
BR102021014044A2 (en)
BR102021013929A2 (en)
BR112021017747A2 (en)
BR102021012571A2 (en)
BR102021012230A2 (en)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220613

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230404

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230601

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230912

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20231002

R150 Certificate of patent or registration of utility model

Ref document number: 7361202

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150