JPWO2021186694A1 - - Google Patents

Info

Publication number
JPWO2021186694A1
JPWO2021186694A1 JP2022507981A JP2022507981A JPWO2021186694A1 JP WO2021186694 A1 JPWO2021186694 A1 JP WO2021186694A1 JP 2022507981 A JP2022507981 A JP 2022507981A JP 2022507981 A JP2022507981 A JP 2022507981A JP WO2021186694 A1 JPWO2021186694 A1 JP WO2021186694A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022507981A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021186694A1 publication Critical patent/JPWO2021186694A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2022507981A 2020-03-19 2020-03-19 Pending JPWO2021186694A1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/012411 WO2021186694A1 (ja) 2020-03-19 2020-03-19 半導体装置

Publications (1)

Publication Number Publication Date
JPWO2021186694A1 true JPWO2021186694A1 (ja) 2021-09-23

Family

ID=77769167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022507981A Pending JPWO2021186694A1 (ja) 2020-03-19 2020-03-19

Country Status (4)

Country Link
US (1) US11949411B2 (ja)
JP (1) JPWO2021186694A1 (ja)
CN (1) CN115244682A (ja)
WO (1) WO2021186694A1 (ja)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224647A (ja) * 1992-12-03 1994-08-12 Sharp Corp 増幅回路
US5374899A (en) * 1993-11-10 1994-12-20 Itt Corporation Self biased power amplifier employing FETs
JPH1051244A (ja) * 1996-07-31 1998-02-20 Nec Corp Ｆｅｔ増幅器
US5892400A (en) * 1995-12-15 1999-04-06 Anadigics, Inc. Amplifier using a single polarity power supply and including depletion mode FET and negative voltage generator
JP2005026972A (ja) * 2003-07-01 2005-01-27 Mitsubishi Electric Corp モノリシック高周波増幅器
JP2013211666A (ja) * 2012-03-30 2013-10-10 Furukawa Electric Co Ltd:The 増幅器
WO2014080668A1 (ja) * 2012-11-21 2014-05-30 株式会社村田製作所 高周波増幅回路
JP2018023043A (ja) * 2016-08-04 2018-02-08 富士通株式会社 電力増幅装置、半導体集積回路および電力増幅装置の制御方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS627218A (ja) 1985-07-03 1987-01-14 Hitachi Ltd 半導体装置の入力保護回路
JP3107035B2 (ja) 1998-03-18 2000-11-06 日本電気株式会社 低雑音増幅器及びその制御回路

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224647A (ja) * 1992-12-03 1994-08-12 Sharp Corp 増幅回路
US5374899A (en) * 1993-11-10 1994-12-20 Itt Corporation Self biased power amplifier employing FETs
US5892400A (en) * 1995-12-15 1999-04-06 Anadigics, Inc. Amplifier using a single polarity power supply and including depletion mode FET and negative voltage generator
JPH1051244A (ja) * 1996-07-31 1998-02-20 Nec Corp Ｆｅｔ増幅器
JP2005026972A (ja) * 2003-07-01 2005-01-27 Mitsubishi Electric Corp モノリシック高周波増幅器
JP2013211666A (ja) * 2012-03-30 2013-10-10 Furukawa Electric Co Ltd:The 増幅器
WO2014080668A1 (ja) * 2012-11-21 2014-05-30 株式会社村田製作所 高周波増幅回路
JP2018023043A (ja) * 2016-08-04 2018-02-08 富士通株式会社 電力増幅装置、半導体集積回路および電力増幅装置の制御方法

Also Published As

Publication number Publication date
CN115244682A (zh) 2022-10-25
US11949411B2 (en) 2024-04-02
WO2021186694A1 (ja) 2021-09-23
US20220385286A1 (en) 2022-12-01

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