JPWO2021177094A1 - - Google Patents

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Publication number
JPWO2021177094A1
JPWO2021177094A1 JP2022505137A JP2022505137A JPWO2021177094A1 JP WO2021177094 A1 JPWO2021177094 A1 JP WO2021177094A1 JP 2022505137 A JP2022505137 A JP 2022505137A JP 2022505137 A JP2022505137 A JP 2022505137A JP WO2021177094 A1 JPWO2021177094 A1 JP WO2021177094A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022505137A
Other versions
JP7301211B2 (ja
JPWO2021177094A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021177094A1 publication Critical patent/JPWO2021177094A1/ja
Publication of JPWO2021177094A5 publication Critical patent/JPWO2021177094A5/ja
Application granted granted Critical
Publication of JP7301211B2 publication Critical patent/JP7301211B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
JP2022505137A 2020-03-05 2021-02-24 半導体レーザモジュール Active JP7301211B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020038255 2020-03-05
JP2020038255 2020-03-05
PCT/JP2021/006811 WO2021177094A1 (ja) 2020-03-05 2021-02-24 半導体レーザモジュール

Publications (3)

Publication Number Publication Date
JPWO2021177094A1 true JPWO2021177094A1 (ja) 2021-09-10
JPWO2021177094A5 JPWO2021177094A5 (ja) 2022-05-30
JP7301211B2 JP7301211B2 (ja) 2023-06-30

Family

ID=77613510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022505137A Active JP7301211B2 (ja) 2020-03-05 2021-02-24 半導体レーザモジュール

Country Status (4)

Country Link
US (1) US20230017562A1 (ja)
JP (1) JP7301211B2 (ja)
DE (1) DE112021001430T5 (ja)
WO (1) WO2021177094A1 (ja)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5903583A (en) * 1995-02-22 1999-05-11 Ullman; Christoph Diode laser component with cooling element and diode laser module
JP2001308423A (ja) * 2000-04-26 2001-11-02 Mitsubishi Heavy Ind Ltd 冷却ブロック及びこれを備えたｌｄ装置並びにこれを励起光源とする固体レーザ装置
JP2006294943A (ja) * 2005-04-12 2006-10-26 Sony Corp 半導体レーザ装置及びヒートシンク
JP2007134746A (ja) * 2007-02-19 2007-05-31 Mitsubishi Electric Corp 冷却装置、半導体レーザ光源装置、半導体レーザ光源ユニット、および半導体レーザ光源ユニットの製造方法、ならびに固体レーザ装置
JP2015023201A (ja) * 2013-07-22 2015-02-02 パナソニック株式会社 半導体レーザモジュール
WO2017141894A1 (ja) * 2016-02-15 2017-08-24 三菱電機株式会社 半導体レーザ光源装置
WO2017183300A1 (ja) * 2016-04-19 2017-10-26 パナソニックＩｐマネジメント株式会社 半導体レーザ装置及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5903583A (en) * 1995-02-22 1999-05-11 Ullman; Christoph Diode laser component with cooling element and diode laser module
JP2001308423A (ja) * 2000-04-26 2001-11-02 Mitsubishi Heavy Ind Ltd 冷却ブロック及びこれを備えたｌｄ装置並びにこれを励起光源とする固体レーザ装置
JP2006294943A (ja) * 2005-04-12 2006-10-26 Sony Corp 半導体レーザ装置及びヒートシンク
JP2007134746A (ja) * 2007-02-19 2007-05-31 Mitsubishi Electric Corp 冷却装置、半導体レーザ光源装置、半導体レーザ光源ユニット、および半導体レーザ光源ユニットの製造方法、ならびに固体レーザ装置
JP2015023201A (ja) * 2013-07-22 2015-02-02 パナソニック株式会社 半導体レーザモジュール
WO2017141894A1 (ja) * 2016-02-15 2017-08-24 三菱電機株式会社 半導体レーザ光源装置
WO2017183300A1 (ja) * 2016-04-19 2017-10-26 パナソニックＩｐマネジメント株式会社 半導体レーザ装置及びその製造方法

Also Published As

Publication number Publication date
JP7301211B2 (ja) 2023-06-30
WO2021177094A1 (ja) 2021-09-10
US20230017562A1 (en) 2023-01-19
DE112021001430T5 (de) 2023-01-12

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