JPWO2021166600A1 - - Google Patents

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Publication number
JPWO2021166600A1
JPWO2021166600A1 JP2022501744A JP2022501744A JPWO2021166600A1 JP WO2021166600 A1 JPWO2021166600 A1 JP WO2021166600A1 JP 2022501744 A JP2022501744 A JP 2022501744A JP 2022501744 A JP2022501744 A JP 2022501744A JP WO2021166600 A1 JPWO2021166600 A1 JP WO2021166600A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022501744A
Other versions
JP7465946B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021166600A1 publication Critical patent/JPWO2021166600A1/ja
Application granted granted Critical
Publication of JP7465946B2 publication Critical patent/JP7465946B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2022501744A 2020-02-20 2021-01-29 処理液、パターン形成方法 Active JP7465946B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020026866 2020-02-20
JP2020026866 2020-02-20
PCT/JP2021/003324 WO2021166600A1 (ja) 2020-02-20 2021-01-29 処理液、パターン形成方法

Publications (2)

Publication Number Publication Date
JPWO2021166600A1 true JPWO2021166600A1 (ja) 2021-08-26
JP7465946B2 JP7465946B2 (ja) 2024-04-11

Family

ID=77390954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022501744A Active JP7465946B2 (ja) 2020-02-20 2021-01-29 処理液、パターン形成方法

Country Status (3)

Country Link
JP (1) JP7465946B2 (ja)
TW (1) TW202136917A (ja)
WO (1) WO2021166600A1 (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011215244A (ja) * 2010-03-31 2011-10-27 Hoya Corp レジスト層の現像剤、レジストパターンの形成方法及びモールドの製造方法
JP2013045055A (ja) * 2011-08-26 2013-03-04 Shin Etsu Chem Co Ltd パターン形成方法及びレジスト組成物
WO2016208313A1 (ja) * 2015-06-23 2016-12-29 富士フイルム株式会社 現像液、パターン形成方法、及び電子デバイスの製造方法
WO2017057225A1 (ja) * 2015-09-30 2017-04-06 富士フイルム株式会社 処理液及びパターン形成方法
JP2018081306A (ja) * 2016-11-07 2018-05-24 富士フイルム株式会社 処理液及びパターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011215244A (ja) * 2010-03-31 2011-10-27 Hoya Corp レジスト層の現像剤、レジストパターンの形成方法及びモールドの製造方法
JP2013045055A (ja) * 2011-08-26 2013-03-04 Shin Etsu Chem Co Ltd パターン形成方法及びレジスト組成物
WO2016208313A1 (ja) * 2015-06-23 2016-12-29 富士フイルム株式会社 現像液、パターン形成方法、及び電子デバイスの製造方法
WO2017057225A1 (ja) * 2015-09-30 2017-04-06 富士フイルム株式会社 処理液及びパターン形成方法
JP2018081306A (ja) * 2016-11-07 2018-05-24 富士フイルム株式会社 処理液及びパターン形成方法

Also Published As

Publication number Publication date
TW202136917A (zh) 2021-10-01
JP7465946B2 (ja) 2024-04-11
WO2021166600A1 (ja) 2021-08-26

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