JPWO2021140743A1 - - Google Patents

Info

Publication number
JPWO2021140743A1
JPWO2021140743A1 JP2021569740A JP2021569740A JPWO2021140743A1 JP WO2021140743 A1 JPWO2021140743 A1 JP WO2021140743A1 JP 2021569740 A JP2021569740 A JP 2021569740A JP 2021569740 A JP2021569740 A JP 2021569740A JP WO2021140743 A1 JPWO2021140743 A1 JP WO2021140743A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021569740A
Other versions
JPWO2021140743A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021140743A1 publication Critical patent/JPWO2021140743A1/ja
Publication of JPWO2021140743A5 publication Critical patent/JPWO2021140743A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP2021569740A 2020-01-10 2020-11-13 Pending JPWO2021140743A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020002653 2020-01-10
PCT/JP2020/042355 WO2021140743A1 (ja) 2020-01-10 2020-11-13 光デバイス

Publications (2)

Publication Number Publication Date
JPWO2021140743A1 true JPWO2021140743A1 (ja) 2021-07-15
JPWO2021140743A5 JPWO2021140743A5 (ja) 2022-09-05

Family

ID=76787854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021569740A Pending JPWO2021140743A1 (ja) 2020-01-10 2020-11-13

Country Status (4)

Country Link
US (1) US20220310868A1 (ja)
JP (1) JPWO2021140743A1 (ja)
CN (1) CN114868259A (ja)
WO (1) WO2021140743A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230057769A (ko) * 2021-10-22 2023-05-02 삼성전자주식회사 포토다이오드 및 이를 포함하는 전자 장치
JP2023064622A (ja) * 2021-10-26 2023-05-11 デクセリアルズ株式会社 光学フィルタ、フォトダイオードモジュール、及び光学フィルタの製造方法
DE102021213747B3 (de) * 2021-12-02 2023-02-09 BRANDENBURGISCHE TECHNISCHE UNIVERSITÄT COTTBUS-SENFTENBERG, Körperschaft des öffentlichen Rechts Vorrichtung und Verfahren zur Absorption von elektromagnetischer Strahlung, System zur Verwendung in einem Bildsensor, sowie Verfahren zur Herstellung einer Vorrichtung zur Absorption von elektromagnetischer Strahlung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242669A (ja) * 2006-03-06 2007-09-20 Matsushita Electric Ind Co Ltd 半導体発光装置及びその製造方法
JP4835837B2 (ja) * 2006-03-31 2011-12-14 日本電気株式会社 フォトダイオードとその製造方法
JP5300344B2 (ja) * 2007-07-06 2013-09-25 キヤノン株式会社 光検出素子及び撮像素子、光検出方法及び撮像方法
JP5269527B2 (ja) * 2008-08-29 2013-08-21 株式会社東芝 半導体装置
CN106098817A (zh) * 2016-06-24 2016-11-09 中国科学院长春光学精密机械与物理研究所 光电子器件、半导体基板及其制作方法
JP6944315B2 (ja) * 2017-09-05 2021-10-06 浜松ホトニクス株式会社 光検出素子
WO2019069585A1 (ja) * 2017-10-04 2019-04-11 パナソニックＩｐマネジメント株式会社 光デバイス、光電変換装置、および燃料生成装置

Also Published As

Publication number Publication date
WO2021140743A1 (ja) 2021-07-15
US20220310868A1 (en) 2022-09-29
CN114868259A (zh) 2022-08-05

Similar Documents

Publication Publication Date Title
BR112023005462A2 (ja)
BR112021014123A2 (ja)
BR112023012656A2 (ja)
BR112022009896A2 (ja)
BR112022024743A2 (ja)
BR112023009656A2 (ja)
BR102021018859A2 (ja)
BR102021015500A2 (ja)
BR102021007058A2 (ja)
BR102020022030A2 (ja)
BR112023011738A2 (ja)
BR112023016292A2 (ja)
BR112023004146A2 (ja)
BR112023011539A2 (ja)
BR112023011610A2 (ja)
BR112023008976A2 (ja)
BR112023006729A2 (ja)
BR102021020147A2 (ja)
BR102021018926A2 (ja)
BR102021018167A2 (ja)
BR102021017576A2 (ja)
BR102021016837A2 (ja)
BR102021016551A2 (ja)
BR102021016375A2 (ja)
BR102021016176A2 (ja)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220623

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230913