JPWO2021133140A5

JPWO2021133140A5 -

Info

Publication number: JPWO2021133140A5
Application number: JP2022540346A
Authority: JP
Publication date: 2024-01-12

Claims

a first light emitting stack;
a second light emitting stack disposed below the first light emitting stack;
a third light emitting stack disposed below the second light emitting stack;
first to fourth connection electrodes disposed above the first light emitting stack and electrically connected to the first to third light emitting stacks; and including a bonding metal layer,
The first to fourth connection electrodes each include a groove on an upper surface,
In the light emitting device, the bonding metal layer covers each of the grooves of the first to fourth connection electrodes.

The light emitting device of claim 1, further comprising a barrier layer disposed between the bonding metal layer and the connection electrode.

The light emitting device according to claim 1, wherein the bonding metal layer at least partially covers the top surface of the connection electrode around the groove, together with the groove on the top surface of the connection electrode.

The light emitting device according to claim 1, wherein the connection electrode includes Cu and the bonding metal layer includes Au.

the first light emitting stack is electrically coupled to the first connection electrode and the fourth connection electrode;
the second light emitting stack is electrically coupled to the second connection electrode and the fourth connection electrode;
The light emitting device of claim 1, wherein the third light emitting stack is electrically coupled to the third connection electrode and the fourth connection electrode.

The first to third connection electrodes are electrically connected to the second conductive type semiconductor layers of the first to third light emitting stacks, respectively;
The light emitting device according to claim 5, wherein the fourth connection electrode is electrically connected to the first conductive type semiconductor layer of the first to third light emitting stacks.

The light emitting device according to claim 6, wherein the first to fourth connection electrodes are disposed in an upper region of the first conductive type semiconductor layer of the third light emitting stack.

a first pad electrically coupling the first connection electrode to the first light emitting stack;
a second pad electrically coupling the second connection electrode to the second light emitting stack;
a third pad electrically coupling the third coupling electrode to the third light emitting stack; and a fourth pad electrically coupling the fourth coupling electrode to the first to third light emitting stacks. The light emitting device according to claim 6, further comprising a pad.

a first lower contact electrode in contact with the second conductivity type semiconductor layer of the first light emitting stack;
a second lower contact electrode in contact with the second conductivity type semiconductor layer of the second light emitting stack; and a third lower contact electrode in contact with the second conductivity type semiconductor layer of the third light emitting stack. including,
9. The light emitting device according to claim 8, wherein the first to third pads are connected to the first to third lower contact electrodes, respectively.

further comprising a first upper contact electrode in ohmic contact with the first conductivity type semiconductor layer of the first light emitting stack;
the first conductivity type semiconductor layer of the first light emitting stack has a recessed region;
The light emitting device according to claim 9, wherein the first upper contact electrode covers the recessed region.

The light emitting device according to claim 10, wherein the fourth pad is connected to the first upper contact electrode.