JPWO2021131832A1 - - Google Patents

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Publication number
JPWO2021131832A1
JPWO2021131832A1 JP2021567266A JP2021567266A JPWO2021131832A1 JP WO2021131832 A1 JPWO2021131832 A1 JP WO2021131832A1 JP 2021567266 A JP2021567266 A JP 2021567266A JP 2021567266 A JP2021567266 A JP 2021567266A JP WO2021131832 A1 JPWO2021131832 A1 JP WO2021131832A1
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JP
Japan
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JP2021567266A
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JP7229394B2 (ja
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Publication of JPWO2021131832A1 publication Critical patent/JPWO2021131832A1/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
JP2021567266A 2019-12-27 2020-12-14 基板処理装置および基板処理方法 Active JP7229394B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019237598 2019-12-27
JP2019237598 2019-12-27
PCT/JP2020/046465 WO2021131832A1 (ja) 2019-12-27 2020-12-14 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
JPWO2021131832A1 true JPWO2021131832A1 (ja) 2021-07-01
JP7229394B2 JP7229394B2 (ja) 2023-02-27

Family

ID=76574411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021567266A Active JP7229394B2 (ja) 2019-12-27 2020-12-14 基板処理装置および基板処理方法

Country Status (2)

Country Link
JP (1) JP7229394B2 (ja)
WO (1) WO2021131832A1 (ja)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007517413A (ja) * 2003-12-30 2007-06-28 アクリオン・エルエルシー 基板処理中の窒化ケイ素の選択エッチングのための装置及び方法
JP2008078627A (ja) * 2006-08-25 2008-04-03 Toshiba Corp 半導体装置の製造方法
JP2013045972A (ja) * 2011-08-25 2013-03-04 Tokyo Electron Ltd 液処理装置、液処理方法および記憶媒体
WO2016013239A1 (ja) * 2014-07-22 2016-01-28 住友電気工業株式会社 化合物半導体を洗浄する方法、化合物半導体の洗浄用の溶液
JP2018163978A (ja) * 2017-03-24 2018-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
WO2019239970A1 (ja) * 2018-06-13 2019-12-19 東京エレクトロン株式会社 基板処理方法および基板処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007517413A (ja) * 2003-12-30 2007-06-28 アクリオン・エルエルシー 基板処理中の窒化ケイ素の選択エッチングのための装置及び方法
JP2008078627A (ja) * 2006-08-25 2008-04-03 Toshiba Corp 半導体装置の製造方法
JP2013045972A (ja) * 2011-08-25 2013-03-04 Tokyo Electron Ltd 液処理装置、液処理方法および記憶媒体
WO2016013239A1 (ja) * 2014-07-22 2016-01-28 住友電気工業株式会社 化合物半導体を洗浄する方法、化合物半導体の洗浄用の溶液
JP2018163978A (ja) * 2017-03-24 2018-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
WO2019239970A1 (ja) * 2018-06-13 2019-12-19 東京エレクトロン株式会社 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
JP7229394B2 (ja) 2023-02-27
WO2021131832A1 (ja) 2021-07-01

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