JPWO2021111536A1 - - Google Patents
Info
- Publication number
- JPWO2021111536A1 JPWO2021111536A1 JP2020531789A JP2020531789A JPWO2021111536A1 JP WO2021111536 A1 JPWO2021111536 A1 JP WO2021111536A1 JP 2020531789 A JP2020531789 A JP 2020531789A JP 2020531789 A JP2020531789 A JP 2020531789A JP WO2021111536 A1 JPWO2021111536 A1 JP WO2021111536A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2019/047331 WO2021111536A1 (en) | 2019-12-04 | 2019-12-04 | Semiconductor laser element, method for manufacturing same, and semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6818946B1 JP6818946B1 (en) | 2021-01-27 |
JPWO2021111536A1 true JPWO2021111536A1 (en) | 2021-06-10 |
Family
ID=74200198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020531789A Active JP6818946B1 (en) | 2019-12-04 | 2019-12-04 | Semiconductor laser element and its manufacturing method, semiconductor laser device |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220344893A1 (en) |
JP (1) | JP6818946B1 (en) |
CN (1) | CN114762201A (en) |
WO (1) | WO2021111536A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117813735A (en) * | 2021-08-10 | 2024-04-02 | 新唐科技日本株式会社 | Semiconductor laser device, sub-assembly with solder set, and inspection method for semiconductor laser device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10294493A (en) * | 1997-02-21 | 1998-11-04 | Toshiba Corp | Semiconductor light-emitting device |
JP2005191209A (en) * | 2003-12-25 | 2005-07-14 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and manufacturing method thereof |
KR101065076B1 (en) * | 2005-05-07 | 2011-09-15 | 삼성전자주식회사 | Submount for light emitting device |
JP2007103804A (en) * | 2005-10-06 | 2007-04-19 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
JP5259166B2 (en) * | 2007-12-06 | 2013-08-07 | 日本オクラロ株式会社 | Semiconductor laser device |
JP5380135B2 (en) * | 2009-04-03 | 2014-01-08 | 日本オクラロ株式会社 | Multi-beam semiconductor laser device |
JP5625405B2 (en) * | 2010-03-12 | 2014-11-19 | Tdk株式会社 | Surface mount electronic components |
JP6173994B2 (en) * | 2014-10-16 | 2017-08-02 | ウシオオプトセミコンダクター株式会社 | Optical semiconductor device |
US9543736B1 (en) * | 2015-11-20 | 2017-01-10 | International Business Machines Corporation | Optimized solder pads for solder induced alignment of opto-electronic chips |
WO2018158934A1 (en) * | 2017-03-03 | 2018-09-07 | 三菱電機株式会社 | Semiconductor laser and method for manufacturing same |
JP6900798B2 (en) * | 2017-06-16 | 2021-07-07 | ウシオ電機株式会社 | Multi-beam type semiconductor laser element and multi-beam type semiconductor laser device |
-
2019
- 2019-12-04 CN CN201980102505.XA patent/CN114762201A/en active Pending
- 2019-12-04 WO PCT/JP2019/047331 patent/WO2021111536A1/en active Application Filing
- 2019-12-04 US US17/641,164 patent/US20220344893A1/en active Pending
- 2019-12-04 JP JP2020531789A patent/JP6818946B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2021111536A1 (en) | 2021-06-10 |
US20220344893A1 (en) | 2022-10-27 |
CN114762201A (en) | 2022-07-15 |
JP6818946B1 (en) | 2021-01-27 |
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