JPWO2021105095A5 - - Google Patents

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JPWO2021105095A5
JPWO2021105095A5 JP2022529919A JP2022529919A JPWO2021105095A5 JP WO2021105095 A5 JPWO2021105095 A5 JP WO2021105095A5 JP 2022529919 A JP2022529919 A JP 2022529919A JP 2022529919 A JP2022529919 A JP 2022529919A JP WO2021105095 A5 JPWO2021105095 A5 JP WO2021105095A5
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oxygen
ruthenium
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containing layer
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Priority claimed from PCT/EP2020/083152 external-priority patent/WO2021105095A1/en
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本発明を、或る程度の詳細さをもって記載及び例示したが、この開示は例示として行ったものに過ぎないこと、及び各ステップの条件及び順番の数々の変化は、本発明の趣旨及び範囲から逸脱することなく、当業者によって採用できることが理解される。
本願は特許請求の範囲に記載の発明に係るものであるが、本願の開示は以下も包含する：
１． 次式Ｉ：

Figure 2021105095000001
［式中、
Ｒ １、 Ｒ ２ 、Ｒ ３ 及びＲ ４ は、それぞれ独立して、置換されたもしくは置換されていないＣ １ ～Ｃ ２０ 線状もしくは分岐状もしくは環状アルキル、及び置換されたもしくは置換されていないＣ １ ～Ｃ ２０ 線状もしくは分岐状もしくは環状ハロゲン化アルキルの群から選択され；
ｎは２または３である］
で表され、但し、好ましくは、水、金属イオンまたは金属、及び有機不純物を実質的に含まない、ルテニウムを含むＡＬＤまたはＡＬＤ類似前駆体。
２． Ｒ １、 Ｒ ２ 、Ｒ ３ 及びＲ ４ が、それぞれ独立して、－ＣＨ ３ 、－ＣＨ ２ ＣＨ ３ 、－ＣＨ ２ ＣＨ ２ ＣＨ ３ 、－ＣＨ（ＣＨ３） ２ 、－ＣＨ ２ ＣＨ（ＣＨ ３ ） ２ 、－Ｃ（ＣＨ ３ ） ３ 、－ＣＦ ３ 、－ＣＦ ２ ＣＦ ３ 、－ＣＦ ２ ＣＦ ２ ＣＦ ３ 、－ＣＦ（ＣＦ ３ ） ２ 、－Ｃ（ＣＦ ３ ） ３ のうちの一つである、前記１．に記載の前駆体。
３． Ｒ １ 、Ｒ ２ 、Ｒ ３ 及びＲ ４ のうちの少なくとも一つが、置換されたもしくは置換されていないＣ １ ～Ｃ ８ パーフルオロアルキルである、前記１．に記載の前駆体。
４． ｎが２である、前記１．に記載の前駆体。
５． ｎが３である、前記１．に記載の前駆体。
６． Ｒ １ 、Ｒ ２ 、Ｒ ３ 及びＲ ４ がそれぞれ同じ基である、前記１．に記載の前駆体。
７． Ｒ １ 及びＲ ４ 、またはＲ ２ 及びＲ ３ がそれぞれ同じ基である、前記１．に記載の前駆体。
８． 次の構造を有する、前記１．に記載の前駆体。
Figure 2021105095000002
 ９． 次の構造を有する、前記１．に記載の前駆体。
Figure 2021105095000003
 １０． 次の構造を有する、前記１．に記載の前駆体。
Figure 2021105095000004
 １１． 次の構造を有する、前記１．に記載の前駆体。
Figure 2021105095000005
 １２． 次の構造を有する、前記１．に記載の前駆体。
Figure 2021105095000006
 １３． 前記１．～１２．のいずれか一つに記載の前駆体から誘導されたルテニウム含有層を基材の表面上に堆積させるステップを含む、ＡＬＤまたはＡＬＤ類似方法。
１４． 前記表面が、Ａｌ ２ Ｏ ３ 、ＺｒＯ ２ 、ＨｆＯ ２ 、ＳｉＯ ２ 、ＷＮ、ＷＣＮ、ＴｉＮ、Ｃｕ、Ｃｏ、Ｍｏ、Ｗ及びこれらの組み合わせのうちの少なくとも一つを含む、前記１３．に記載の方法。
１５． おおよそ３００℃未満の温度で行われる、前記１３．に記載の方法。
１６． おおよそ２７５℃未満の温度で行われる、前記１３．に記載の方法。
１７． おおよそ２５０℃未満の温度で行われる、前記１３．に記載の方法。
１８． おおよそ２００℃からおおよそ３００℃までの範囲の温度で行われる、前記１３．に記載の方法。
１９． おおよそ２３５℃からおおよそ３００℃までの範囲の温度で行われる、前記１３．に記載の方法。
２０． 共反応体の使用を更に含む、前記１３．に記載の方法。
２１． 酸素不含共反応体の使用を更に含む、前記１３．に記載の方法。
２２． 酸素含有共反応体の使用を更に含む、前記１３．に記載の方法。
２３． 共反応体としてのＨ ２ の使用を更に含む、前記１３．に記載の方法。
２４． 共反応体としてのＯ ２ の使用を更に含む、前記１３．に記載の方法。
２５． おおよそ０．０１トルとおおよそ２０トルとの間の圧力で行われる、前記１３．に記載の方法。
２６． おおよそ１トルとおおよそ１５トルとの間の圧力で行われる、前記１３．に記載の方法。
２７． おおよそ５トルとおおよそ１５トルとの間の圧力で行われる、前記１３．に記載の方法。
２８． おおよそ５トルとおおよそ１０トルとの間の圧力で行われる、前記１３．に記載の方法。
２９． おおよそ５トルの圧力で行われる、前記１３．に記載の方法。
３０． おおよそ１０トルの圧力で行われる、前記１３．に記載の方法。
３１． おおよそ１５トルの圧力で行われる、前記１３．に記載の方法。
３２． おおよそ１秒間からおおよそ１５秒間までの前駆体パルス時間を用いて行われる、前記１３．に記載の方法。
３３． おおよそ５秒間からおおよそ１０秒間までの前駆体パルス時間を用いて行われる、前記１３．に記載の方法。
３４． おおよそ１０秒間の前駆体パルス時間を用いて行われる、前記１３．に記載の方法。
３５． おおよそ１５秒間の前駆体パルス時間を用いて行われる、前記１３．に記載の方法。
３６． おおよそ１秒間からおおよそ２０秒間までの前駆体パージ時間を用いて行われる、前記１３．に記載の方法。
３７． おおよそ５秒間からおおよそ１５秒間までの前駆体パージ時間を用いて行われる、前記１３．に記載の方法。
３８． おおよそ１０秒間からおおよそ１５秒間の前駆体パージ時間を用いて行われる、前記１３．に記載の方法。
３９． おおよそ１０秒間の前駆体パージ時間を用いて行われる、前記１３．に記載の方法。
４０． おおよそ１５秒間の前駆体パージ時間を用いて行われる、前記１３．に記載の方法。
４１． おおよそ１秒間からおおよそ６０秒間までの共反応体パルス時間を用いて行われる、前記１３．に記載の方法。
４２． おおよそ１０秒間からおおよそ５０秒間までの共反応体パルス時間を用いて行われる、前記１３．に記載の方法。
４３． おおよそ２０秒間からおおよそ４０秒間までの共反応体パルス時間を用いて行われる、前記１３．に記載の方法。
４４． おおよそ３０秒間からおおよそ４０秒間までの共反応体パルス時間を用いて行われる、前記１３．に記載の方法。
４５． おおよそ３０秒間の共反応体パルス時間を用いて行われる、前記１３．に記載の方法。
４６． おおよそ４０秒間の共反応体パルス時間を用いて行われる、前記１３．に記載の方法。
４７． おおよそ５０秒間の共反応体パルス時間を用いて行われる、前記１３．に記載の方法。
４８． おおよそ１秒間からおおよそ９０秒間までの共反応体パージ時間を用いて行われる、前記１３．に記載の方法。
４９． おおよそ１０秒間からおおよそ８０秒間までの共反応体パージ時間を用いて行われる、前記１３．に記載の方法。
５０． おおよそ２０秒間からおおよそ７０秒間までの共反応体パージ時間を用いて行われる、前記１３．に記載の方法。
５１． おおよそ３０秒間からおおよそ６０秒間までの共反応体パージ時間を用いて行われる、前記１３．に記載の方法。
５２． おおよそ５０秒間の共反応体パージ時間を用いて行われる、前記１３．に記載の方法。
５３． おおよそ６０秒間の共反応体パージ時間を用いて行われる、前記１３．に記載の方法。
５４． おおよそ７０秒間の共反応体パージ時間を用いて行われる、前記１３．に記載の方法。
５５． 前記１．～１２．のいずれか一つに記載の前駆体と少なくとも一種の酸素不含共反応体との反応生成物を含む、ＡＬＤまたはＡＬＤ類似堆積膜。
５６． 前記酸素不含共反応体が水素を含む、前記５５．に記載のＡＬＤまたはＡＬＤ類似堆積膜。
５７． 前記酸素不含共反応体が窒素含有共反応体を含む、前記５５．に記載のＡＬＤまたはＡＬＤ類似堆積膜。
５８． 前記酸素不含共反応体が、アンモニア、ヒドラジン、アルキルヒドラジン及びアルキルアミンのうちの一種以上を含む、前記５５．に記載のＡＬＤまたはＡＬＤ類似堆積膜。
５９． 前記１．～１２．のいずれか一つに記載の前駆体と少なくとも一種の酸素含有共反応体との反応生成物を含む、ＡＬＤまたはＡＬＤ類似堆積膜。
６０． 前記酸素含有共反応体が、酸素、過酸化水素及び亜酸化窒素のうちの一種以上を含む、前記５９．に記載のＡＬＤまたはＡＬＤ類似堆積膜。
６１． 前記酸素含有共反応体が、オゾン、元素状酸素及び分子状酸素／Ｏ ２ のうちの一種以上を含む、前記５９．に記載のＡＬＤまたはＡＬＤ類似堆積膜。
６２． 前記酸素含有共反応体がＯ ２ を含む、前記５９．に記載のＡＬＤまたはＡＬＤ類似堆積膜。
６３． 前記１３．に記載の方法であって、
（ｉ）おおよそ２４５℃の温度で；
（ｉｉ）おおよそ１０トルの圧力で；
（ｉｉｉ）おおよそ１０秒間の前駆体パルス時間を用いて；
（ｉｖ）おおよそ１５秒間の前駆体パージ時間を用いて；
（ｖ）おおよそ４０秒間の共反応体パルス時間を用いて；及び
（ｖｉ）おおよそ６０秒間の共反応体パージ時間を用いて；
行われる、前記方法。
６４． 前記共反応体がＨ ２ である、前記６３．に記載の方法。
６５． ＡＬＤまたはＡＬＤ類似方法における、前記１～．１２．のいずれか一つに記載の前駆体の使用。 Although the invention has been described and illustrated in some detail, it is understood that this disclosure is made by way of example only, and that numerous variations in the conditions and order of steps may be construed as departing from the spirit and scope of the invention. It is understood that it may be adopted by those skilled in the art without departing from this.
Although this application relates to the invention described in the claims, the disclosure of this application also includes the following:
1. Formula I:
Figure 2021105095000001
 [In the formula,
R 1 , R 2 , R 3 and R 4 are each independently substituted or unsubstituted C 1 -C 20 linear or branched or cyclic alkyl, and substituted or unsubstituted C selected from the group of 1 to C20 linear or branched or cyclic alkyl halides;
n is 2 or 3]
ALD or ALD-like precursor containing ruthenium, preferably substantially free of water, metal ions or metals, and organic impurities.
2. R 1 , R 2 , R 3 and R 4 are each independently -CH 3 , -CH 2 CH 3 , -CH 2 CH 2 CH 3 , -CH(CH3) 2 , -CH 2 CH ( CH 3 ) 2 , -C(CH 3 ) 3 , -CF 3 , -CF 2 CF 3 , -CF 2 CF 2 CF 3 , -CF(CF 3 ) 2 , -C(CF 3 ) 3 Yes, above 1. Precursors described in.
3. 1. wherein at least one of R 1 , R 2 , R 3 and R 4 is substituted or unsubstituted C 1 -C 8 perfluoroalkyl; Precursors described in.
4. 1. above, where n is 2; Precursors described in.
5. 1. above, where n is 3; Precursors described in.
6. 1. above, wherein R 1 , R 2 , R 3 and R 4 are each the same group; Precursors described in.
7. 1. above, wherein R 1 and R 4 or R 2 and R 3 are each the same group; Precursors described in.
8. Said 1. having the following structure. Precursors described in.
Figure 2021105095000002
 9. Said 1. having the following structure. Precursors described in.
Figure 2021105095000003
 10. Said 1. having the following structure. Precursors described in.
Figure 2021105095000004
 11. Said 1. having the following structure. Precursors described in.
Figure 2021105095000005
 12. Said 1. having the following structure. Precursors described in.
Figure 2021105095000006
 13. Said 1. ~12. ALD or ALD-like method comprising depositing a ruthenium-containing layer derived from a precursor according to any one of the above on the surface of a substrate.
14. 13. wherein the surface comprises at least one of Al 2 O 3 , ZrO 2 , HfO 2 , SiO 2 , WN, WCN, TiN, Cu, Co, Mo, W, and combinations thereof. The method described in.
15. 13 above, carried out at a temperature of approximately less than 300°C. The method described in.
16. 13 above, carried out at a temperature of approximately less than 275°C. The method described in.
17. 13 above, carried out at a temperature of approximately less than 250°C. The method described in.
18. 13 above, carried out at a temperature ranging from approximately 200°C to approximately 300°C. The method described in.
19. 13 above, carried out at a temperature ranging from approximately 235°C to approximately 300°C. The method described in.
20. 13 above, further comprising the use of a co-reactant. The method described in.
21. 13 above, further comprising the use of an oxygen-free co-reactant. The method described in.
22. 13 above, further comprising the use of an oxygen-containing co-reactant. The method described in.
23. 13 above, further comprising the use of H2 as a co-reactant . The method described in.
24. 13 above, further comprising the use of O2 as a coreactant . The method described in.
25. 13. conducted at a pressure between approximately 0.01 Torr and approximately 20 Torr. The method described in.
26. 13. carried out at a pressure between approximately 1 Torr and approximately 15 Torr. The method described in.
27. 13. conducted at a pressure between approximately 5 Torr and approximately 15 Torr. The method described in.
28. 13. carried out at a pressure between approximately 5 Torr and approximately 10 Torr. The method described in.
29. 13 above, carried out at a pressure of approximately 5 Torr. The method described in.
30. 13 above, carried out at a pressure of approximately 10 Torr. The method described in.
31. 13 above, carried out at a pressure of approximately 15 Torr. The method described in.
32. 13. carried out using a precursor pulse time of approximately 1 second to approximately 15 seconds. The method described in.
33. 13. is carried out using a precursor pulse time of approximately 5 seconds to approximately 10 seconds. The method described in.
34. 13. carried out using a precursor pulse time of approximately 10 seconds. The method described in.
35. 13. carried out using a precursor pulse time of approximately 15 seconds. The method described in.
36. 13. conducted using a precursor purge time of approximately 1 second to approximately 20 seconds. The method described in.
37. 13. is carried out using a precursor purge time of approximately 5 seconds to approximately 15 seconds. The method described in.
38. 13. is carried out using a precursor purge time of approximately 10 seconds to approximately 15 seconds. The method described in.
39. 13 above, performed using a precursor purge time of approximately 10 seconds. The method described in.
40. 13. is performed using a precursor purge time of approximately 15 seconds. The method described in.
41. 13. carried out using a coreactant pulse time of approximately 1 second to approximately 60 seconds. The method described in.
42. 13. carried out using a coreactant pulse time of approximately 10 seconds to approximately 50 seconds. The method described in.
43. 13. carried out using a coreactant pulse time of approximately 20 seconds to approximately 40 seconds. The method described in.
44. 13. conducted using coreactant pulse times of approximately 30 seconds to approximately 40 seconds. The method described in.
45. 13. carried out using a coreactant pulse time of approximately 30 seconds. The method described in.
46. 13. carried out using a coreactant pulse time of approximately 40 seconds. The method described in.
47. 13. carried out using a coreactant pulse time of approximately 50 seconds. The method described in.
48. 13. conducted using a co-reactant purge time of approximately 1 second to approximately 90 seconds. The method described in.
49. 13. conducted using a co-reactant purge time of approximately 10 seconds to approximately 80 seconds. The method described in.
50. 13. is carried out using a co-reactant purge time of approximately 20 seconds to approximately 70 seconds. The method described in.
51. 13. is carried out using a co-reactant purge time of approximately 30 seconds to approximately 60 seconds. The method described in.
52. 13 above, performed using a coreactant purge time of approximately 50 seconds. The method described in.
53. 13 above, performed using a coreactant purge time of approximately 60 seconds. The method described in.
54. 13. is carried out using a coreactant purge time of approximately 70 seconds. The method described in.
55. Said 1. ~12. An ALD or ALD-like deposited film comprising a reaction product of a precursor according to any one of the preceding claims and at least one oxygen-free co-reactant.
56. 55 above, wherein said oxygen-free coreactant comprises hydrogen. ALD or ALD-like deposited film as described in .
57. 55 above, wherein said oxygen-free coreactant comprises a nitrogen-containing coreactant. ALD or ALD-like deposited film as described in .
58. 55 above, wherein the oxygen-free co-reactant comprises one or more of ammonia, hydrazine, alkylhydrazine and alkylamine. ALD or ALD-like deposited film as described in .
59. Said 1. ~12. An ALD or ALD-like deposited film comprising a reaction product of a precursor according to any one of the preceding paragraphs and at least one oxygen-containing co-reactant.
60. 59 above, wherein the oxygen-containing co-reactant comprises one or more of oxygen, hydrogen peroxide and nitrous oxide. ALD or ALD-like deposited film as described in .
61. 59 above, wherein the oxygen-containing co-reactant comprises one or more of ozone, elemental oxygen and molecular oxygen/ O2 . ALD or ALD-like deposited film as described in .
62. 59. above, wherein said oxygen-containing co-reactant comprises O2 . ALD or ALD-like deposited film as described in .
63. 13 above. The method described in
(i) at a temperature of approximately 245°C;
(ii) at a pressure of approximately 10 Torr;
(iii) using a precursor pulse time of approximately 10 seconds;
(iv) using a precursor purge time of approximately 15 seconds;
(v) using a coreactant pulse time of approximately 40 seconds; and
(vi) with a coreactant purge time of approximately 60 seconds;
Said method is carried out.
64. 63. above, wherein the co-reactant is H2 . The method described in.
65. In ALD or an ALD-like method, 1 to . 12. Use of a precursor according to any one of the following.

Claims (31)

ルテニウム含有層を基材上に堆積させるためのＡＬＤまたはＡＬＤ類似方法であって、
（ｉ） 前記基材の表面を前駆体に曝すステップであって、前記前駆体が、次式Ｉ：
Figure 2021105095000007
 ［式中、
Ｒ１、Ｒ２、Ｒ３及びＲ４は、それぞれ独立して、置換されたもしくは置換されていないＣ１～Ｃ２０線状もしくは分岐状アルキル、及び置換されたもしくは置換されていないＣ１～Ｃ２０線状もしくは分岐状ハロゲン化アルキルの群から選択され；
ｎは２または３である］
で表され、但し、水、金属イオンまたは金属、及び有機不純物を実質的に含まない、ルテニウムを含むＡＬＤまたはＡＬＤ類似前駆体である、ステップ、
（ｉｉ） その後、前記基材の表面を一種以上の共反応体に曝すステップ、
を含み、おおよそ２００℃からおおよそ３００℃未満までの範囲の温度で行われる、前記方法。 An ALD or ALD-like method for depositing a ruthenium-containing layer on a substrate, the method comprising:
(i) exposing the surface of the substrate to a precursor, the precursor having the following formula I:
Figure 2021105095000007
 [In the formula,
R 1 , R 2 , R 3 and R 4 are each independently substituted or unsubstituted C 1 -C 20 linear or branched alkyl , and substituted or unsubstituted C 1 selected from the group of ~ C20 linear or branched alkyl halides ;
n is 2 or 3]
is an ALD or ALD-like precursor containing ruthenium, substantially free of water , metal ions or metals, and organic impurities,
(ii) thereafter exposing the surface of said substrate to one or more co-reactants;
and carried out at a temperature ranging from about 200<0>C to less than about 300<0>C. 式Ｉ中のＲ１、Ｒ２、Ｒ３及びＲ４が、それぞれ独立して、－ＣＨ３、－ＣＨ２ＣＨ３、－ＣＨ２ＣＨ２ＣＨ３、－ＣＨ（ＣＨ３）２、－ＣＨ２ＣＨ（ＣＨ３）２、－Ｃ（ＣＨ３）３、－ＣＦ３、－ＣＦ２ＣＦ３、－ＣＦ２ＣＦ２ＣＦ３、－ＣＦ（ＣＦ３）２、－Ｃ（ＣＦ３）３のうちの一つである、請求項１に記載の方法。 R 1 , R 2 , R 3 and R 4 in Formula I are each independently -CH 3 , -CH 2 CH 3 , -CH 2 CH 2 CH 3 , -CH(CH 3 ) 2 , -CH 2 CH(CH 3 ) 2 , -C(CH 3 ) 3 , -CF 3 , -CF 2 CF 3 , -CF 2 CF 2 CF 3 , -CF(CF 3 ) 2 , -C(CF 3 ) 3 2. The method of claim 1. 前記前駆体が次の構造を有する、請求項１または２に記載の方法。
Figure 2021105095000008
Figure 2021105095000009
Figure 2021105095000010
Figure 2021105095000011
 及び／または
Figure 2021105095000012
 3. The method according to claim 1 or 2 , wherein the precursor has the following structure:
Figure 2021105095000008
Figure 2021105095000009
Figure 2021105095000010
Figure 2021105095000011
 and/or
Figure 2021105095000012
 前記前駆体が次の構造を有する、請求項１または２に記載の方法。3. The method according to claim 1 or 2, wherein the precursor has the following structure:
Figure 2021105095000013
Figure 2021105095000013
 前記表面が、Ａｌ２Ｏ３、ＺｒＯ２、ＨｆＯ２、ＳｉＯ２、ＷＮ、ＷＣＮ、ＴｉＮ、Ｃｕ、Ｃｏ、Ｍｏ、Ｗ及びこれらの組み合わせのうちの少なくとも一つを含む、請求項１～４のいずれか一つに記載の方法。 5. The method of claim 1 , wherein the surface comprises at least one of Al 2 O 3 , ZrO 2 , HfO 2 , SiO 2 , WN, WCN, TiN, Cu, Co, Mo, W and combinations thereof. Any one of the methods described. おおよそ２７５℃未満の温度で行われる、請求項１～５のいずれか一つに記載の方法。 A method according to any one of claims 1 to 5 , carried out at a temperature of approximately less than 275°C. おおよそ２５０℃未満の温度で行われる、請求項１～５のいずれか一つに記載の方法。 A method according to any one of claims 1 to 5 , carried out at a temperature of approximately less than 250°C. おおよそ２２５℃からおおよそ２９５℃までの範囲の温度で行われる、請求項１～５のいずれか一つに記載の方法。 A method according to any one of claims 1 to 5 , carried out at a temperature in the range from approximately 225 °C to approximately 295 °C. おおよそ２３５℃からおおよそ３００℃未満までの範囲の温度で行われる、請求項１～５のいずれか一つに記載の方法。 A method according to any one of claims 1 to 5 , carried out at a temperature ranging from approximately 235°C to less than approximately 300°C. 前記一種以上の共反応体が酸素不含共反応体を含む、請求項１～９のいずれか一つに記載の方法。 A method according to any one of claims 1 to 9 , wherein the one or more coreactants comprises an oxygen-free coreactant. 前記一種以上の共反応体が酸素含有共反応体を含む、請求項１～９のいずれか一つに記載の方法。 A method according to any one of claims 1 to 9 , wherein the one or more coreactants comprises an oxygen-containing coreactant. 前記一種以上の共反応体がＨ２ を含む、請求項１～９のいずれか一つに記載の方法。 A method according to any one of claims 1 to 9, wherein the one or more co-reactants comprises H2 . 前記一種以上の共反応体が、オゾン、元素状酸素、分子状酸素／ＯThe one or more co-reactants may include ozone, elemental oxygen, molecular oxygen/O ２2 、過酸化水素及び亜酸化窒素のうちの一つ以上を含む、請求項１～９のいずれか一つに記載の方法。, hydrogen peroxide and nitrous oxide. おおよそ１トルとおおよそ１５トルとの間の圧力で行われる、請求項１～１３のいずれか一つに記載の方法。 14. A method according to any one of claims 1 to 13, carried out at a pressure of between approximately 1 Torr and approximately 15 Torr. おおよそ１秒間からおおよそ１５秒間までの前駆体パルス時間を用いて行われる、請求項１～１４のいずれか一つに記載の方法。 15. A method according to any preceding claim, carried out using a precursor pulse time of approximately 1 second to approximately 15 seconds. おおよそ１秒間からおおよそ２０秒間までの前駆体パージ時間を用いて行われる、請求項１～１５のいずれか一つに記載の方法。 16. A method according to any one of claims 1 to 15 , carried out using a precursor purge time of approximately 1 second to approximately 20 seconds. おおよそ１秒間からおおよそ６０秒間までの共反応体パルス時間を用いて行われる、請求項１～１６のいずれか一つに記載の方法。 17. A method according to any one of claims 1 to 16 , carried out using coreactant pulse times of approximately 1 second to approximately 60 seconds. おおよそ１秒間からおおよそ９０秒間までの共反応体パージ時間を用いて行われる、請求項１～１７のいずれか一つに記載の方法。 18. A method according to any one of claims 1 to 17 , carried out using a co-reactant purge time of approximately 1 second to approximately 90 seconds. 前記ルテニウム含有層が、８０Åの堆積膜のＲｕ厚さで、堆積されたままの状態で約４０μＯｈｍ・ｃｍ未満の抵抗を有する、請求項１～１８のいずれか一つに記載の方法。19. The method of any preceding claim, wherein the ruthenium-containing layer has an as-deposited resistance of less than about 40 μOhm-cm at a deposited Ru thickness of 80 Å. 請求項１～４のいずれか一つに定義される前駆体と少なくとも一種の酸素不含共反応体との反応生成物を含む、ルテニウム含有層。 Ruthenium-containing layer comprising a reaction product of a precursor as defined in any one of claims 1 to 4 and at least one oxygen-free co-reactant. 前記少なくとも一種の酸素不含共反応体が水素を含む、請求項２０に記載のルテニウム含有層。 21. The ruthenium-containing layer of claim 20 , wherein the at least one oxygen-free coreactant comprises hydrogen. 前記少なくとも一種の酸素不含共反応体が窒素含有共反応体を含む、請求項２０に記載のルテニウム含有層。 21. The ruthenium-containing layer of claim 20 , wherein the at least one oxygen-free coreactant comprises a nitrogen-containing coreactant. 前記少なくとも一種の酸素不含共反応体が、アンモニア、ヒドラジン、アルキルヒドラジン及びアルキルアミンのうちの一種以上を含む、請求項２０に記載のルテニウム含有層。 21. The ruthenium-containing layer of claim 20 , wherein the at least one oxygen-free coreactant comprises one or more of ammonia, hydrazine, alkylhydrazine, and alkylamine. 請求項１～１０、１２及び１４～１９のいずれか一つに記載の方法によって堆積された、請求項２０～２３のいずれか一つに記載のルテニウム含有層。Ruthenium-containing layer according to any one of claims 20 to 23, deposited by a method according to any one of claims 1 to 10, 12 and 14 to 19. 請求項１～４のいずれか一つに定義される前駆体と少なくとも一種の酸素含有共反応体との反応生成物を含む、ルテニウム含有層。 Ruthenium-containing layer comprising a reaction product of a precursor as defined in any one of claims 1 to 4 and at least one oxygen-containing co-reactant. 前記少なくとも一種の酸素含有共反応体が、酸素、過酸化水素及び亜酸化窒素のうちの一種以上を含む、請求項２５に記載のルテニウム含有層。 26. The ruthenium-containing layer of claim 25 , wherein the at least one oxygen-containing coreactant comprises one or more of oxygen, hydrogen peroxide, and nitrous oxide. 前記少なくとも一種の酸素含有共反応体が、オゾン、元素状酸素及び分子状酸素／Ｏ２のうちの一種以上を含む、請求項２５に記載のルテニウム含有層。 26. The ruthenium-containing layer of claim 25 , wherein the at least one oxygen-containing coreactant comprises one or more of ozone, elemental oxygen, and molecular oxygen/ O2 . 前記少なくとも一種の酸素含有共反応体がＯ２を含む、請求項２５に記載のルテニウム含有層。 26. The ruthenium-containing layer of claim 25 , wherein the at least one oxygen-containing coreactant comprises O2 . 請求項１～９、１１、１３及び１４～１９のいずれか一つに記載の方法によって堆積された、請求項２５～２８のいずれか一つに記載のルテニウム含有層。Ruthenium-containing layer according to any one of claims 25 to 28, deposited by a method according to any one of claims 1 to 9, 11, 13 and 14 to 19. ＡＬＤまたはＡＬＤ類似堆積膜である、請求項２０～２９のいずれか一つに記載のルテニウム含有層。Ruthenium-containing layer according to any one of claims 20 to 29, which is an ALD or ALD-like deposited film. ８０Åの堆積膜のＲｕ厚さで、堆積されたままの状態で約４０μＯｈｍ・ｃｍ未満の抵抗を有する、請求項２０～３０のいずれか一つに記載のルテニウム含有層。31. A ruthenium-containing layer according to any one of claims 20 to 30, having an as-deposited resistance of less than about 40 μOhm-cm at a deposited Ru thickness of 80 Å.
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