JPWO2021100586A1 - - Google Patents

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Publication number
JPWO2021100586A1
JPWO2021100586A1 JP2021558325A JP2021558325A JPWO2021100586A1 JP WO2021100586 A1 JPWO2021100586 A1 JP WO2021100586A1 JP 2021558325 A JP2021558325 A JP 2021558325A JP 2021558325 A JP2021558325 A JP 2021558325A JP WO2021100586 A1 JPWO2021100586 A1 JP WO2021100586A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021558325A
Other versions
JP7301152B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021100586A1 publication Critical patent/JPWO2021100586A1/ja
Application granted granted Critical
Publication of JP7301152B2 publication Critical patent/JP7301152B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
JP2021558325A 2019-11-22 2020-11-12 下層膜形成用組成物、レジストパターン形成方法、電子デバイスの製造方法 Active JP7301152B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019211509 2019-11-22
JP2019211509 2019-11-22
PCT/JP2020/042191 WO2021100586A1 (ja) 2019-11-22 2020-11-12 下層膜形成用組成物、レジストパターン形成方法、電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
JPWO2021100586A1 true JPWO2021100586A1 (ja) 2021-05-27
JP7301152B2 JP7301152B2 (ja) 2023-06-30

Family

ID=75981247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021558325A Active JP7301152B2 (ja) 2019-11-22 2020-11-12 下層膜形成用組成物、レジストパターン形成方法、電子デバイスの製造方法

Country Status (3)

Country Link
US (1) US20220283499A1 (ja)
JP (1) JP7301152B2 (ja)
WO (1) WO2021100586A1 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013156627A (ja) * 2012-01-04 2013-08-15 Shin Etsu Chem Co Ltd レジスト下層膜材料、レジスト下層膜材料用ポリマーの製造方法、及び前記レジスト下層膜材料を用いたパターン形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102675775B1 (ko) * 2016-12-27 2024-06-18 삼성전자주식회사 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013156627A (ja) * 2012-01-04 2013-08-15 Shin Etsu Chem Co Ltd レジスト下層膜材料、レジスト下層膜材料用ポリマーの製造方法、及び前記レジスト下層膜材料を用いたパターン形成方法

Also Published As

Publication number Publication date
WO2021100586A1 (ja) 2021-05-27
US20220283499A1 (en) 2022-09-08
JP7301152B2 (ja) 2023-06-30

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