JPWO2021085216A5 - - Google Patents
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- JPWO2021085216A5 JPWO2021085216A5 JP2021553430A JP2021553430A JPWO2021085216A5 JP WO2021085216 A5 JPWO2021085216 A5 JP WO2021085216A5 JP 2021553430 A JP2021553430 A JP 2021553430A JP 2021553430 A JP2021553430 A JP 2021553430A JP WO2021085216 A5 JPWO2021085216 A5 JP WO2021085216A5
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- Japan
- Prior art keywords
- elastic member
- semiconductor device
- joining
- electrode plate
- substrate
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims 6
- 238000006243 chemical reaction Methods 0.000 claims 5
- 239000011162 core material Substances 0.000 claims 4
- 238000007789 sealing Methods 0.000 claims 4
- 239000000463 material Substances 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
Description
本開示における半導体装置は、冷却板と、裏面が冷却板に接合された基板と、表面に電極が設けられ、裏面が基板の表面に接合された半導体素子と、半導体素子の表面に対向するように配置された電極板と、半導体素子と電極板との間に設けられ、一端が電極に、他端が電極板に、それぞれ線接触または面接触された、弾性部材と、電極と弾性部材の一端とを、電極板と弾性部材の他端とを、それぞれ接合する、導電性の接合部材と、を備える。弾性部材の表面は、接合部材で覆われている。 The semiconductor device in the present disclosure has a cooling plate, a substrate whose back surface is bonded to the cooling plate, a semiconductor element having electrodes on the front surface and the back surface bonded to the front surface of the substrate, and facing the surface of the semiconductor element. An elastic member, and an electrode and an elastic member, which are provided between the semiconductor element and the electrode plate and are line-contacted or surface-contacted with the electrode at one end and the electrode plate at the other end, respectively. A conductive joining member for joining one end of the electrode plate and the other end of the elastic member, respectively. The surface of the elastic member is covered with a joining member.
Claims (12)
裏面が前記冷却板に接合された基板と、
表面に電極が設けられ、裏面が前記基板の表面に接合された半導体素子と、
前記半導体素子の表面に対向するように配置された電極板と、前記半導体素子と前記電極板との間に設けられ、一端が前記電極に、他端が前記電極板に、それぞれ線接触または面接触された、弾性部材と、
前記電極と前記弾性部材の一端とを、前記電極板と前記弾性部材の他端とを、それぞれ接合する、導電性の接合部材と、
を備え、
前記弾性部材の表面は、前記接合部材で覆われている、半導体装置。 With the cooling plate,
A substrate whose back surface is joined to the cooling plate,
A semiconductor device in which electrodes are provided on the front surface and the back surface is bonded to the front surface of the substrate.
An electrode plate arranged so as to face the surface of the semiconductor element and provided between the semiconductor element and the electrode plate, one end of which is in line contact with the electrode and the other end of which is in line contact or surface with the electrode plate. With the elastic member in contact,
A conductive joining member that joins the electrode and one end of the elastic member, and the other end of the electrode plate and the elastic member, respectively.
Equipped with
A semiconductor device in which the surface of the elastic member is covered with the joining member .
前記芯材は、前記被覆部よりも大きい弾性率を有する金属によって構成されており、
前記被覆部は、前記芯材よりも大きい導電率を有する金属を含む材料によって構成されている、請求項１または２に記載の半導体装置。 The elastic member whose surface is covered with the joining member includes a core material and a covering portion covering the periphery of the core material.
The core material is made of a metal having a modulus of elasticity higher than that of the covering portion.
The semiconductor device according to claim 1 or 2, wherein the covering portion is made of a material containing a metal having a higher conductivity than the core material.
前記凸構造に前記弾性部材が巻き付けられることで前記弾性部材が前記電極板に接合可能である、請求項６に記載の半導体装置。 A convex structure is provided as the holding portion, and a convex structure is provided.
The semiconductor device according to claim 6 , wherein the elastic member can be joined to the electrode plate by winding the elastic member around the convex structure.
前記凹構造に前記弾性部材が差し込まれることで前記弾性部材が前記電極板に接合可能である、請求項６に記載の半導体装置。 A concave structure is provided as the holding portion, and a concave structure is provided.
The semiconductor device according to claim 6 , wherein the elastic member can be joined to the electrode plate by inserting the elastic member into the concave structure.
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と、
を備えた電力変換装置。 A main conversion circuit having the semiconductor device according to any one of claims 1 to 9 and converting and outputting input power.
A control circuit that outputs a control signal that controls the main conversion circuit to the main conversion circuit, and a control circuit that outputs the control signal to the main conversion circuit.
Power conversion device equipped with.
前記第一の接合部材を加熱して、前記基板の表面と前記半導体素子の裏面とを接合する半導体素子接合工程と、
前記半導体素子の表面に、導電性の第二の接合部材、弾性力を有する導電性の弾性部材、および電極板を配置する弾性部材配置工程と、
前記第二の接合部材を加熱して、前記電極と前記弾性部材の一端とを、前記電極板と前記弾性部材の他端とを、それぞれ線接触または面接触させて接合する弾性部材接合工程と、前記半導体素子と前記電極板とを封止する封止工程と、
前記基板の裏面と冷却板とを接合する冷却板接合工程と、
を含む半導体装置の製造方法。 A semiconductor device placement process in which a first conductive bonding member and a semiconductor device having electrodes on the surface are placed on the surface of a substrate.
A semiconductor device joining step of heating the first joining member to join the front surface of the substrate and the back surface of the semiconductor device.
An elastic member arranging step of arranging a second conductive joining member, a conductive elastic member having an elastic force, and an electrode plate on the surface of the semiconductor element.
An elastic member joining step in which the second joining member is heated and the electrode and one end of the elastic member are joined by linear contact or surface contact with the electrode plate and the other end of the elastic member, respectively. , A sealing step for sealing the semiconductor element and the electrode plate,
A cooling plate joining process for joining the back surface of the substrate and the cooling plate,
A method for manufacturing a semiconductor device including.
前記第一の接合部材を加熱して、前記基板の表面と前記半導体素子の裏面とを接合する半導体素子接合工程と、
前記半導体素子の表面に、弾性力を有する導電性の弾性部材に導電性の第二の接合部材による被膜が形成された接合被膜弾性部材、および電極板を配置する弾性部材配置工程と、前記接合被膜弾性部材を加熱して、前記電極と前記弾性部材の一端とを、前記電極板と前記弾性部材の他端とを、それぞれ線接触または面接触させて接合する弾性部材接合工程と、
前記半導体素子と前記電極板とを封止する封止工程と、
前記基板の裏面と冷却板とを接合する冷却板接合工程と、
を含む半導体装置の製造方法。 A semiconductor device placement process in which a first conductive bonding member and a semiconductor device having electrodes on the surface are placed on the surface of a substrate.
A semiconductor device joining step of heating the first joining member to join the front surface of the substrate and the back surface of the semiconductor device.
A joining film elastic member in which a coating formed by a second conductive joining member is formed on a conductive elastic member having an elastic force on the surface of the semiconductor element, and an elastic member arranging step of arranging an electrode plate, and the joining. An elastic member joining step in which the coated elastic member is heated and the electrode and one end of the elastic member are joined by linear contact or surface contact with the electrode plate and the other end of the elastic member, respectively.
A sealing step for sealing the semiconductor element and the electrode plate, and
A cooling plate joining process for joining the back surface of the substrate and the cooling plate,
A method for manufacturing a semiconductor device including.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019195900 | 2019-10-29 | ||
| JP2019195900 | 2019-10-29 | ||
| PCT/JP2020/039271 WO2021085216A1 (en) | 2019-10-29 | 2020-10-19 | Semiconductor device, electric power conversion device, and method for producing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021085216A1 JPWO2021085216A1 (en) | 2021-05-06 |
| JPWO2021085216A5 true JPWO2021085216A5 (en) | 2022-06-27 |
| JP7166471B2 JP7166471B2 (en) | 2022-11-07 |
Family
ID=75715973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021553430A Active JP7166471B2 (en) | 2019-10-29 | 2020-10-19 | Semiconductor device, power conversion device, and method for manufacturing semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7166471B2 (en) |
| CN (1) | CN114586151A (en) |
| WO (1) | WO2021085216A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4071791A1 (en) * | 2021-04-09 | 2022-10-12 | Hitachi Energy Switzerland AG | Spring element for a press contact in a power semiconductor module, and method for manufacturing the same |
| JP2024035598A (en) * | 2022-09-02 | 2024-03-14 | 株式会社デンソー | Semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06302734A (en) * | 1993-04-14 | 1994-10-28 | Sansha Electric Mfg Co Ltd | Semiconductor module for power |
| JP2008227131A (en) * | 2007-03-13 | 2008-09-25 | Renesas Technology Corp | Semiconductor device and its manufacturing method |
| JP2013236015A (en) * | 2012-05-10 | 2013-11-21 | Nhk Spring Co Ltd | Power module, installation structure of connection terminal in power module, and connection terminal |
| JP6302734B2 (en) | 2014-04-23 | 2018-03-28 | 新日鉄住金エンジニアリング株式会社 | Pile construction jig and pile construction method |
-
2020
- 2020-10-19 CN CN202080073761.3A patent/CN114586151A/en active Pending
- 2020-10-19 JP JP2021553430A patent/JP7166471B2/en active Active
- 2020-10-19 WO PCT/JP2020/039271 patent/WO2021085216A1/en active Application Filing
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