JPWO2021065295A1 - - Google Patents

Info

Publication number
JPWO2021065295A1
JPWO2021065295A1 JP2021550460A JP2021550460A JPWO2021065295A1 JP WO2021065295 A1 JPWO2021065295 A1 JP WO2021065295A1 JP 2021550460 A JP2021550460 A JP 2021550460A JP 2021550460 A JP2021550460 A JP 2021550460A JP WO2021065295 A1 JPWO2021065295 A1 JP WO2021065295A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021550460A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021065295A1 publication Critical patent/JPWO2021065295A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
JP2021550460A 2019-09-30 2020-09-01 Pending JPWO2021065295A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019180533 2019-09-30
PCT/JP2020/033110 WO2021065295A1 (ja) 2019-09-30 2020-09-01 プラズマ処理の異常判定システムおよび異常判定方法

Publications (1)

Publication Number Publication Date
JPWO2021065295A1 true JPWO2021065295A1 (ja) 2021-04-08

Family

ID=75337882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021550460A Pending JPWO2021065295A1 (ja) 2019-09-30 2020-09-01

Country Status (4)

Country Link
US (1) US20220336196A1 (ja)
JP (1) JPWO2021065295A1 (ja)
CN (1) CN114467163A (ja)
WO (1) WO2021065295A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117121169A (zh) * 2022-03-24 2023-11-24 株式会社日立高新技术 装置诊断系统、装置诊断装置、半导体装置制造系统以及装置诊断方法
CN116228176B (zh) * 2023-05-10 2023-07-18 安徽皖欣环境科技有限公司 一种基于数据处理的污水处理数据高效管理系统

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002093676A (ja) * 2000-09-20 2002-03-29 Hitachi Ltd 半導体製造装置のリモート診断システム及びリモート診断方法
JP4464276B2 (ja) * 2002-08-13 2010-05-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2004363405A (ja) * 2003-06-06 2004-12-24 Matsushita Electric Ind Co Ltd プラズマ処理装置の異常検出方法
JP4754419B2 (ja) * 2006-07-03 2011-08-24 学校法人立命館 プラズマ異常放電診断方法、プラズマ異常放電診断システム及びコンピュータプログラム
KR100891376B1 (ko) * 2007-03-21 2009-04-02 차동호 셀프 플라즈마 챔버와 결합하여 플라즈마 공정장치에서공정진행상태를 실시간으로 모니터하고 이상 여부를검출하는 복합센서
US7733095B2 (en) * 2007-08-15 2010-06-08 Applied Materials, Inc. Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode
JP2018041217A (ja) * 2016-09-06 2018-03-15 東京エレクトロン株式会社 異常検知方法及び半導体製造装置
JP6914211B2 (ja) * 2018-01-30 2021-08-04 株式会社日立ハイテク プラズマ処理装置及び状態予測装置

Also Published As

Publication number Publication date
WO2021065295A1 (ja) 2021-04-08
US20220336196A1 (en) 2022-10-20
CN114467163A (zh) 2022-05-10

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Legal Events

Date Code Title Description
A621 Written request for application examination

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Effective date: 20230712