JPWO2021053884A1 - - Google Patents

Info

Publication number
JPWO2021053884A1
JPWO2021053884A1 JP2021546503A JP2021546503A JPWO2021053884A1 JP WO2021053884 A1 JPWO2021053884 A1 JP WO2021053884A1 JP 2021546503 A JP2021546503 A JP 2021546503A JP 2021546503 A JP2021546503 A JP 2021546503A JP WO2021053884 A1 JPWO2021053884 A1 JP WO2021053884A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021546503A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021053884A1 publication Critical patent/JPWO2021053884A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
JP2021546503A 2019-09-17 2020-05-25 Pending JPWO2021053884A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019168493 2019-09-17
PCT/JP2020/020539 WO2021053884A1 (ja) 2019-09-17 2020-05-25 圧電素子およびその製造方法

Publications (1)

Publication Number Publication Date
JPWO2021053884A1 true JPWO2021053884A1 (ja) 2021-03-25

Family

ID=74884468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021546503A Pending JPWO2021053884A1 (ja) 2019-09-17 2020-05-25

Country Status (5)

Country Link
US (1) US20220209095A1 (ja)
JP (1) JPWO2021053884A1 (ja)
CN (1) CN114402447A (ja)
DE (1) DE112020003862T5 (ja)
WO (1) WO2021053884A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT202000015073A1 (it) * 2020-06-23 2021-12-23 St Microelectronics Srl Trasduttore microelettromeccanico a membrana con smorzatore attivo
EP4437815A1 (en) * 2021-11-26 2024-10-02 Qphox B.V. Fabrication method for a thin-film layer on a substrate

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090302716A1 (en) * 2008-06-10 2009-12-10 Kabushiki Kaisha Toshiba Piezoelectric device
JP2010247295A (ja) * 2009-04-17 2010-11-04 Toshiba Corp 圧電ｍｅｍｓ素子及びその製造方法
WO2011099381A1 (ja) * 2010-02-09 2011-08-18 株式会社村田製作所 圧電デバイス、圧電デバイスの製造方法
WO2012020638A1 (ja) * 2010-08-12 2012-02-16 株式会社村田製作所 圧電薄膜素子の製造方法、圧電薄膜素子及び圧電薄膜素子用部材
JP2012084675A (ja) * 2010-10-12 2012-04-26 Konica Minolta Holdings Inc 圧電デバイスおよびその製造方法
US20180278236A1 (en) * 2017-03-24 2018-09-27 Crystal Waves LABs Limited Rf resonators and filters
WO2018216632A1 (ja) * 2017-05-23 2018-11-29 京セラ株式会社 圧電式センサおよびその製造方法
WO2019102952A1 (ja) * 2017-11-22 2019-05-31 株式会社村田製作所 圧電デバイス及び圧電デバイスの製造方法
US20190245515A1 (en) * 2018-02-05 2019-08-08 Zhuhai Crystal Resonance Technologies Co., Ltd. Single crystal piezoelectric rf resonators and filters with improved cavity definition
WO2019159555A1 (ja) * 2018-02-13 2019-08-22 日本碍子株式会社 圧電性材料基板と支持基板との接合体

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090302716A1 (en) * 2008-06-10 2009-12-10 Kabushiki Kaisha Toshiba Piezoelectric device
JP2009302661A (ja) * 2008-06-10 2009-12-24 Toshiba Corp 圧電デバイス
JP2010247295A (ja) * 2009-04-17 2010-11-04 Toshiba Corp 圧電ｍｅｍｓ素子及びその製造方法
WO2011099381A1 (ja) * 2010-02-09 2011-08-18 株式会社村田製作所 圧電デバイス、圧電デバイスの製造方法
US20130193809A1 (en) * 2010-02-09 2013-08-01 Murata Manufacturing Co., Ltd. Piezoelectric device and method for manufacturing piezoelectric device
US20130127293A1 (en) * 2010-08-12 2013-05-23 Murata Manufacturing Co., Ltd. Method for producing piezoelectric thin-film element, piezoelectric thin-film element, and member for piezoelectric thin-film element
WO2012020638A1 (ja) * 2010-08-12 2012-02-16 株式会社村田製作所 圧電薄膜素子の製造方法、圧電薄膜素子及び圧電薄膜素子用部材
JP2012084675A (ja) * 2010-10-12 2012-04-26 Konica Minolta Holdings Inc 圧電デバイスおよびその製造方法
US20180278236A1 (en) * 2017-03-24 2018-09-27 Crystal Waves LABs Limited Rf resonators and filters
WO2018216632A1 (ja) * 2017-05-23 2018-11-29 京セラ株式会社 圧電式センサおよびその製造方法
WO2019102952A1 (ja) * 2017-11-22 2019-05-31 株式会社村田製作所 圧電デバイス及び圧電デバイスの製造方法
US20190245515A1 (en) * 2018-02-05 2019-08-08 Zhuhai Crystal Resonance Technologies Co., Ltd. Single crystal piezoelectric rf resonators and filters with improved cavity definition
WO2019159555A1 (ja) * 2018-02-13 2019-08-22 日本碍子株式会社 圧電性材料基板と支持基板との接合体

Also Published As

Publication number Publication date
US20220209095A1 (en) 2022-06-30
CN114402447A (zh) 2022-04-26
WO2021053884A1 (ja) 2021-03-25
DE112020003862T5 (de) 2022-05-05

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