JPWO2021044617A1 - - Google Patents

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Publication number
JPWO2021044617A1
JPWO2021044617A1 JP2020571887A JP2020571887A JPWO2021044617A1 JP WO2021044617 A1 JPWO2021044617 A1 JP WO2021044617A1 JP 2020571887 A JP2020571887 A JP 2020571887A JP 2020571887 A JP2020571887 A JP 2020571887A JP WO2021044617 A1 JPWO2021044617 A1 JP WO2021044617A1
Authority
JP
Japan
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Application number
JP2020571887A
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JP7372946B2 (ja
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Publication of JPWO2021044617A1 publication Critical patent/JPWO2021044617A1/ja
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Publication of JP7372946B2 publication Critical patent/JP7372946B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP2020571887A 2019-09-06 2019-09-06 裏面電極型太陽電池の製造方法 Active JP7372946B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/035203 WO2021044617A1 (ja) 2019-09-06 2019-09-06 裏面電極型太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JPWO2021044617A1 true JPWO2021044617A1 (ja) 2021-03-11
JP7372946B2 JP7372946B2 (ja) 2023-11-01

Family

ID=74853105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020571887A Active JP7372946B2 (ja) 2019-09-06 2019-09-06 裏面電極型太陽電池の製造方法

Country Status (2)

Country Link
JP (1) JP7372946B2 (ja)
WO (1) WO2021044617A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021201030A1 (ja) * 2020-03-30 2021-10-07 株式会社カネカ 太陽電池および太陽電池の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4883561A (en) * 1988-03-29 1989-11-28 Bell Communications Research, Inc. Lift-off and subsequent bonding of epitaxial films
JP2006032784A (ja) * 2004-07-20 2006-02-02 Sharp Corp 半導体装置の製造方法、半導体装置
JP2006156472A (ja) * 2004-11-25 2006-06-15 Seiko Epson Corp レジスト膜の除去方法およびレジスト膜除去装置
WO2015060432A1 (ja) * 2013-10-25 2015-04-30 シャープ株式会社 光電変換装置
WO2019163647A1 (ja) * 2018-02-23 2019-08-29 株式会社カネカ 太陽電池の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4883561A (en) * 1988-03-29 1989-11-28 Bell Communications Research, Inc. Lift-off and subsequent bonding of epitaxial films
JP2006032784A (ja) * 2004-07-20 2006-02-02 Sharp Corp 半導体装置の製造方法、半導体装置
JP2006156472A (ja) * 2004-11-25 2006-06-15 Seiko Epson Corp レジスト膜の除去方法およびレジスト膜除去装置
WO2015060432A1 (ja) * 2013-10-25 2015-04-30 シャープ株式会社 光電変換装置
WO2019163647A1 (ja) * 2018-02-23 2019-08-29 株式会社カネカ 太陽電池の製造方法

Also Published As

Publication number Publication date
WO2021044617A1 (ja) 2021-03-11
JP7372946B2 (ja) 2023-11-01

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