JPWO2021013641A5 - - Google Patents

Claims (20)

A method of fabricating a light emitting diode (LED) array comprising the steps of forming a semiconductor layer of a III-nitride material and forming a dielectric mask layer overlying the semiconductor layer, the dielectric mask layer comprising: forming an array of holes through the dielectric mask layer, each exposing an area of the semiconductor layer; growing an LED structure within each of the holes; The method of claim 1, wherein the array includes a first set of holes each having a first cross-sectional area and a second set of holes each having a second cross-sectional area different from said first cross-sectional area. 2. The method of claim 1, wherein the first cross-sectional area is at least 1% greater than the second cross-sectional area. Each of the LED structures comprises a first set of LED structures each having a first cross-sectional area and a second set of LED structures each having a second cross-sectional area different from the first cross-sectional area. 3. The method of claim 1 or 2, wherein each of said fills said holes grown therein to include a set of LED structures. The first set of LED structures are each arranged to emit light having a first peak wavelength, and the second set of LED structures are configured to emit light having a second peak wavelength different from the first peak wavelength. 4. The method of claim 3, wherein each is arranged to emit light having a peak wavelength of . 5. Any one of claims 1-4, wherein the array of holes further comprises a third set of holes each having a third cross-sectional area different from the first and second cross-sectional areas. Method. The array of LED structures includes a third set of LED structures grown in the third set of holes, the third set of LED structures having the first and second peak wavelengths. are each arranged to emit light having a different third peak wavelength. The LED structures are arranged in groups, and the method includes forming a plurality of contacts, each of the contacts connecting to a respective one of the groups of LED structures. 7. The method of any one of claims 1 to 6, further comprising the step of forming so that each of said groups of LED structures can be activated independently from other groups of LED structures. The LED structures are arranged in groups, and the method includes forming a plurality of contacts, each of the contacts connecting to a respective one of the groups of LED structures. wherein each of said groups of LED structures can be activated independently from other groups of LED structures;
6. The method of claim 3 or 5, wherein each of said groups of LED structures includes at least one LED structure from each of said sets of LED structures. The LED structures are arranged in groups, and the method includes forming a plurality of contacts, each of the contacts connecting to a respective one of the groups of LED structures. wherein each of said groups of LED structures can be activated independently from other groups of LED structures;
6. The method of claim 3 or 5, wherein each of said groups of LED structures includes only LED structures from one of said sets of LED structures. 10. A method according to any preceding claim, wherein each of said sets of holes are arranged in a regular array. 1. An LED array comprising a semiconductor layer and a dielectric layer having an array of LED structures extending over the semiconductor layer and extending through the dielectric layer, the LED structures comprising: An LED array comprising a first set of LED structures each having a first cross-sectional area and a second set of LED structures each having a second cross-sectional area different from said first cross-sectional area. 12. The LED array of claim 11, wherein said second cross-sectional area is at least 1% greater than said first cross-sectional area. Each of the LED structures is formed in a respective hole through the semiconductor layer, the holes comprising a first set of holes each having a first cross-sectional area and the first cross-sectional area. comprises a second set of holes each having a different second cross-sectional area. The first set of LED structures are each arranged to emit light having a first peak wavelength, and the second set of LED structures are configured to emit light having a second peak wavelength different from the first peak wavelength. 14. An LED array according to any one of claims 11 to 13, each arranged to emit light having a peak wavelength of . 15. The LED structure of any one of claims 11-14, wherein the LED structure further comprises a third set of LED structures each having a third cross-sectional area different from the first and second cross-sectional areas. LED array. said LED structures further comprising a third set of LED structures each having a third cross-sectional area different than said first and second cross-sectional areas;
15. The LED array of claim 14 , wherein the third set of LED structures are each arranged to emit light having a third peak wavelength different from the first and second peak wavelengths. . wherein the LED structures are arranged in a plurality of groups, the array further comprising a plurality of contacts, each of the contacts being connected to a respective one of the groups of LED structures, and 17. The LED array of any one of claims 11 to 16, wherein each of said groups of LED structures can be activated independently from other groups of LED structures. 18. The LED array of claim 17, wherein each of said groups of LED structures includes at least one LED structure from each of said sets of LED structures. 18. The LED array of claim 17, wherein each of said groups of LED structures includes only LED structures from one of said sets of LED structures. 20. A LED array according to any one of claims 11 to 19, wherein each set of LED structures is arranged in a regular array.