JPWO2020241169A1 - - Google Patents
Info
- Publication number
- JPWO2020241169A1 JPWO2020241169A1 JP2021522736A JP2021522736A JPWO2020241169A1 JP WO2020241169 A1 JPWO2020241169 A1 JP WO2020241169A1 JP 2021522736 A JP2021522736 A JP 2021522736A JP 2021522736 A JP2021522736 A JP 2021522736A JP WO2020241169 A1 JPWO2020241169 A1 JP WO2020241169A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019097458 | 2019-05-24 | ||
JP2019097458 | 2019-05-24 | ||
PCT/JP2020/018226 WO2020241169A1 (ja) | 2019-05-24 | 2020-04-30 | 撮像素子、積層型撮像素子及び固体撮像装置、並びに、撮像素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020241169A1 true JPWO2020241169A1 (ja) | 2020-12-03 |
JP7559753B2 JP7559753B2 (ja) | 2024-10-02 |
Family
ID=73552576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021522736A Active JP7559753B2 (ja) | 2019-05-24 | 2020-04-30 | 撮像素子、積層型撮像素子及び固体撮像装置、並びに、撮像素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220231085A1 (ja) |
EP (1) | EP3979349A4 (ja) |
JP (1) | JP7559753B2 (ja) |
CN (1) | CN113728451A (ja) |
WO (1) | WO2020241169A1 (ja) |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5118810B2 (ja) | 2004-11-10 | 2013-01-16 | キヤノン株式会社 | 電界効果型トランジスタ |
JP2007227574A (ja) * | 2006-02-22 | 2007-09-06 | Fujifilm Corp | 光電変換素子、固体撮像素子 |
JP2008177191A (ja) | 2007-01-16 | 2008-07-31 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびそれを用いたカメラ |
JP5509846B2 (ja) | 2009-12-28 | 2014-06-04 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
JP6136663B2 (ja) * | 2013-07-04 | 2017-05-31 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
CN110265550B (zh) * | 2014-07-17 | 2023-10-24 | 索尼公司 | 光电转换元件及其制造方法、成像装置、光学传感器 |
KR102355558B1 (ko) | 2014-07-31 | 2022-01-27 | 삼성전자주식회사 | 이미지 센서 |
JP2016063165A (ja) | 2014-09-19 | 2016-04-25 | 株式会社東芝 | 撮像素子及び固体撮像装置 |
JP2017059655A (ja) * | 2015-09-16 | 2017-03-23 | ソニー株式会社 | 固体撮像素子および固体撮像素子の製造方法 |
WO2017061176A1 (ja) * | 2015-10-06 | 2017-04-13 | ソニー株式会社 | 固体撮像素子および固体撮像素子の製造方法 |
JP7020770B2 (ja) | 2015-12-04 | 2022-02-16 | キヤノン株式会社 | 撮像装置、および、撮像システム |
JP6780421B2 (ja) | 2016-03-01 | 2020-11-04 | ソニー株式会社 | 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法 |
TWI770159B (zh) | 2017-04-21 | 2022-07-11 | 日商索尼股份有限公司 | 攝像元件、積層型攝像元件及固體攝像裝置 |
JP2019036641A (ja) | 2017-08-16 | 2019-03-07 | ソニー株式会社 | 撮像素子、積層型撮像素子及び固体撮像装置 |
EP3671840A4 (en) | 2017-08-16 | 2020-08-19 | Sony Corporation | IMAGING ELEMENT, MULTI-LAYER IMAGING ELEMENT, AND SOLID STATE IMAGING DEVICE |
TW201911549A (zh) | 2017-08-16 | 2019-03-16 | 日商索尼股份有限公司 | 攝像元件、積層型攝像元件及固體攝像裝置 |
TW202335276A (zh) * | 2018-04-20 | 2023-09-01 | 日商索尼股份有限公司 | 攝像元件、積層型攝像元件及固體攝像裝置 |
TWI820114B (zh) * | 2018-04-20 | 2023-11-01 | 日商索尼股份有限公司 | 攝像元件、積層型攝像元件及固體攝像裝置 |
KR102653048B1 (ko) * | 2018-04-20 | 2024-04-01 | 소니그룹주식회사 | 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 |
US11539011B2 (en) * | 2018-07-30 | 2022-12-27 | Sony Semiconductor Solutions Corporation | Solid-state imaging element and electronic device |
-
2020
- 2020-04-30 JP JP2021522736A patent/JP7559753B2/ja active Active
- 2020-04-30 US US17/614,084 patent/US20220231085A1/en active Pending
- 2020-04-30 CN CN202080031618.8A patent/CN113728451A/zh active Pending
- 2020-04-30 WO PCT/JP2020/018226 patent/WO2020241169A1/ja unknown
- 2020-04-30 EP EP20815258.7A patent/EP3979349A4/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JP7559753B2 (ja) | 2024-10-02 |
US20220231085A1 (en) | 2022-07-21 |
EP3979349A1 (en) | 2022-04-06 |
WO2020241169A1 (ja) | 2020-12-03 |
CN113728451A (zh) | 2021-11-30 |
EP3979349A4 (en) | 2022-08-10 |
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