JPWO2020203852A1 - - Google Patents

Info

Publication number
JPWO2020203852A1
JPWO2020203852A1 JP2021512051A JP2021512051A JPWO2020203852A1 JP WO2020203852 A1 JPWO2020203852 A1 JP WO2020203852A1 JP 2021512051 A JP2021512051 A JP 2021512051A JP 2021512051 A JP2021512051 A JP 2021512051A JP WO2020203852 A1 JPWO2020203852 A1 JP WO2020203852A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021512051A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020203852A1 publication Critical patent/JPWO2020203852A1/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
JP2021512051A 2019-03-29 2020-03-27 Pending JPWO2020203852A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019068030 2019-03-29
PCT/JP2020/014232 WO2020203852A1 (ja) 2019-03-29 2020-03-27 レジストパターンメタル化プロセス用組成物

Publications (1)

Publication Number Publication Date
JPWO2020203852A1 true JPWO2020203852A1 (ja) 2020-10-08

Family

ID=72667688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021512051A Pending JPWO2020203852A1 (ja) 2019-03-29 2020-03-27

Country Status (6)

Country Link
US (1) US20220206395A1 (ja)
JP (1) JPWO2020203852A1 (ja)
KR (1) KR20210150407A (ja)
CN (1) CN113785243A (ja)
TW (1) TW202041577A (ja)
WO (1) WO2020203852A1 (ja)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4016009B2 (ja) 2004-03-24 2007-12-05 株式会社東芝 パターン形成方法及び半導体装置の製造方法
US11392037B2 (en) * 2008-02-18 2022-07-19 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicone having cyclic amino group
US8852848B2 (en) 2010-07-28 2014-10-07 Z Electronic Materials USA Corp. Composition for coating over a photoresist pattern
JP5889568B2 (ja) * 2011-08-11 2016-03-22 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 酸化タングステン膜形成用組成物およびそれを用いた酸化タングステン膜の製造法
CN112947000A (zh) * 2012-07-30 2021-06-11 日产化学工业株式会社 含有磺酸盐的含硅euv抗蚀剂下层膜形成用组合物
JP6327484B2 (ja) * 2013-10-07 2018-05-23 日産化学工業株式会社 ポリ酸を含むメタル含有レジスト下層膜形成組成物
JPWO2016190261A1 (ja) * 2015-05-25 2018-03-08 日産化学工業株式会社 レジストパターン塗布用組成物

Also Published As

Publication number Publication date
CN113785243A (zh) 2021-12-10
WO2020203852A1 (ja) 2020-10-08
TW202041577A (zh) 2020-11-16
US20220206395A1 (en) 2022-06-30
KR20210150407A (ko) 2021-12-10

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