JPWO2020203227A1 - - Google Patents

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Publication number
JPWO2020203227A1
JPWO2020203227A1 JP2021511381A JP2021511381A JPWO2020203227A1 JP WO2020203227 A1 JPWO2020203227 A1 JP WO2020203227A1 JP 2021511381 A JP2021511381 A JP 2021511381A JP 2021511381 A JP2021511381 A JP 2021511381A JP WO2020203227 A1 JPWO2020203227 A1 JP WO2020203227A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021511381A
Other languages
Japanese (ja)
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JP7507148B2 (en
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Publication date
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Publication of JPWO2020203227A1 publication Critical patent/JPWO2020203227A1/ja
Application granted granted Critical
Publication of JP7507148B2 publication Critical patent/JP7507148B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP2021511381A 2019-03-29 2020-03-16 Method for manufacturing solar cell, in-progress solar cell substrate, and solar cell Active JP7507148B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019068106 2019-03-29
JP2019068106 2019-03-29
PCT/JP2020/011484 WO2020203227A1 (en) 2019-03-29 2020-03-16 Method for manufacturing solar cell, in-process solar cell substrate, and solar cell

Publications (2)

Publication Number Publication Date
JPWO2020203227A1 true JPWO2020203227A1 (en) 2020-10-08
JP7507148B2 JP7507148B2 (en) 2024-06-27

Family

ID=72668820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021511381A Active JP7507148B2 (en) 2019-03-29 2020-03-16 Method for manufacturing solar cell, in-progress solar cell substrate, and solar cell

Country Status (3)

Country Link
JP (1) JP7507148B2 (en)
CN (1) CN113678265B (en)
WO (1) WO2020203227A1 (en)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002200599A (en) 2000-10-30 2002-07-16 Sony Corp Producing method for three-dimensional structure
KR100716641B1 (en) * 2006-06-29 2007-05-09 주식회사 하이닉스반도체 Method of manufacturing cylinder type capacitor using amorphous carbon lyaer
WO2010104098A1 (en) * 2009-03-10 2010-09-16 三洋電機株式会社 Process for producing solar battery, and solar battery
JP2014075526A (en) * 2012-10-05 2014-04-24 Sharp Corp Photoelectric conversion element and photoelectric conversion element manufacturing method
JP6599769B2 (en) 2013-10-25 2019-10-30 シャープ株式会社 Photoelectric conversion device
KR101751727B1 (en) * 2015-06-10 2017-07-11 엘지전자 주식회사 Method for manufacturing solar cell
TWI648858B (en) 2016-06-14 2019-01-21 黃知澍 Ga-face III group / nitride epitaxial structure, its active element and manufacturing method thereof
JP6917990B2 (en) * 2016-06-15 2021-08-11 株式会社カネカ Solar cells, their manufacturing methods, and solar cell modules
JP2018010916A (en) * 2016-07-12 2018-01-18 株式会社アルバック Method for manufacturing hbc type crystal solar cell, and hbc type crystal solar cell
JP6986357B2 (en) 2017-03-24 2021-12-22 株式会社カネカ Solar cell module

Also Published As

Publication number Publication date
CN113678265A (en) 2021-11-19
CN113678265B (en) 2024-03-26
JP7507148B2 (en) 2024-06-27
WO2020203227A1 (en) 2020-10-08

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