JPWO2020203227A1 - - Google Patents
Info
- Publication number
- JPWO2020203227A1 JPWO2020203227A1 JP2021511381A JP2021511381A JPWO2020203227A1 JP WO2020203227 A1 JPWO2020203227 A1 JP WO2020203227A1 JP 2021511381 A JP2021511381 A JP 2021511381A JP 2021511381 A JP2021511381 A JP 2021511381A JP WO2020203227 A1 JPWO2020203227 A1 JP WO2020203227A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019068106 | 2019-03-29 | ||
JP2019068106 | 2019-03-29 | ||
PCT/JP2020/011484 WO2020203227A1 (en) | 2019-03-29 | 2020-03-16 | Method for manufacturing solar cell, in-process solar cell substrate, and solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020203227A1 true JPWO2020203227A1 (en) | 2020-10-08 |
JP7507148B2 JP7507148B2 (en) | 2024-06-27 |
Family
ID=72668820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021511381A Active JP7507148B2 (en) | 2019-03-29 | 2020-03-16 | Method for manufacturing solar cell, in-progress solar cell substrate, and solar cell |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7507148B2 (en) |
CN (1) | CN113678265B (en) |
WO (1) | WO2020203227A1 (en) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002200599A (en) | 2000-10-30 | 2002-07-16 | Sony Corp | Producing method for three-dimensional structure |
KR100716641B1 (en) * | 2006-06-29 | 2007-05-09 | 주식회사 하이닉스반도체 | Method of manufacturing cylinder type capacitor using amorphous carbon lyaer |
WO2010104098A1 (en) * | 2009-03-10 | 2010-09-16 | 三洋電機株式会社 | Process for producing solar battery, and solar battery |
JP2014075526A (en) * | 2012-10-05 | 2014-04-24 | Sharp Corp | Photoelectric conversion element and photoelectric conversion element manufacturing method |
JP6599769B2 (en) | 2013-10-25 | 2019-10-30 | シャープ株式会社 | Photoelectric conversion device |
KR101751727B1 (en) * | 2015-06-10 | 2017-07-11 | 엘지전자 주식회사 | Method for manufacturing solar cell |
TWI648858B (en) | 2016-06-14 | 2019-01-21 | 黃知澍 | Ga-face III group / nitride epitaxial structure, its active element and manufacturing method thereof |
JP6917990B2 (en) * | 2016-06-15 | 2021-08-11 | 株式会社カネカ | Solar cells, their manufacturing methods, and solar cell modules |
JP2018010916A (en) * | 2016-07-12 | 2018-01-18 | 株式会社アルバック | Method for manufacturing hbc type crystal solar cell, and hbc type crystal solar cell |
JP6986357B2 (en) | 2017-03-24 | 2021-12-22 | 株式会社カネカ | Solar cell module |
-
2020
- 2020-03-16 CN CN202080024664.5A patent/CN113678265B/en active Active
- 2020-03-16 WO PCT/JP2020/011484 patent/WO2020203227A1/en active Application Filing
- 2020-03-16 JP JP2021511381A patent/JP7507148B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN113678265A (en) | 2021-11-19 |
CN113678265B (en) | 2024-03-26 |
JP7507148B2 (en) | 2024-06-27 |
WO2020203227A1 (en) | 2020-10-08 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230214 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240307 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240419 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240606 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240617 |