JPWO2020200782A5

JPWO2020200782A5 -

Info

Publication number: JPWO2020200782A5
Application number: JP2021556353A
Authority: JP
Publication date: 2022-08-18
Anticipated expiration: 2040-03-18

Claims

A superconducting coupling device,
A resonator structure having a first end configured to be coupled to a first device and a second end configured to be coupled to a second device. vessel structure and
an electronic system coupled to the resonator structure;
a gate positioned proximate to a portion of the electronic system;
wherein the electronic system and the gate are configured to interrupt the resonator structure at one or more predetermined positions forming a switch, the gate receiving a gate voltage and the resonator structure configured to change the inductance of the electronic system based on a base, wherein the change in the inductance changes the strength of the coupling between the first device and the second device; Inductive, superconducting coupling device.

2. The superconducting coupling device of claim 1, wherein said change in said inductance is a result of said gate changing the critical current of said electronic system.

3. A superconducting coupling device according to claim 1 or 2 , wherein said change in said inductance induces a change in a characteristic frequency of said resonator structure.

4. The superconducting coupling device of claim 3, wherein said change in said characteristic frequency of said resonator structure enables said change in said strength of coupling between said first device and said second device. .

5. Any one of claims 1 to 4, wherein the gate voltage is arranged to change the switch between a low inductance state with a high critical current and a high inductance state with a low critical current. A superconducting coupling device as described.

6. A superconducting coupling device according to any one of claims 1 to 5, wherein at least part of said resonator structure is made of superconducting material.

7. A superconducting coupling device according to any one of claims 1 to 6, wherein said gate is formed of a metallic material or a superconducting material.

3. The first device is capacitively coupled to the first end of the resonator structure and the second device is capacitively coupled to the second end of the resonator structure. 8. A superconducting coupling device according to any one of 1 to 7 .

9. A superconducting coupling device according to any preceding claim, further comprising a ground plane coupled to the resonator structure by a shunt portion of the resonator structure.

10. The superconducting coupling device of claim 9, wherein the shunt portion of the resonator structure contains the electronic system.

11. A superconducting coupling device according to any preceding claim, wherein the electronic system is coupled between a first part of the resonator structure and a second part of the resonator structure. .

12. A superconducting coupling device according to any one of the preceding claims, further comprising a substrate structure, said electronic system being arranged on a surface of said substrate structure.

13. The superconducting coupling device of claim 12, further comprising an insulator disposed over said electronic system, said gate being disposed on an insulating structure.

13. The superconducting coupling device of Claim 12, wherein the electronic system includes a quantum well material disposed between a first barrier material and a second barrier material.

15. A superconducting coupling device according to any preceding claim, wherein the electronic system comprises at least one of a semiconductor material or a graphene material.

16. A superconducting coupling device according to any preceding claim, wherein the first device is a first qubit and the second device is a second qubit.

a method,
coupling the first end of the resonator structure to the first device;
coupling a second end of the resonator structure to a second device;
coupling an electronic system to the resonator structure;
locating a gate proximate to a portion of the electronic system;
interrupting, with said electronic system and said gate, said resonator structure at one or more predetermined positions forming a switch;
receiving a gate voltage by the gate;
varying the inductance of the electronic system based on the gate voltage, wherein the variation in the inductance varies the strength of the coupling between the first device and the second device; varying the inductance to induce a resonator structure;
method including.

A superconductor manufacturing system including a lithographic component, which when operated on a die:
coupling the first end of the resonator structure to the first device;
coupling a second end of the resonator structure to a second device;
coupling an electronic system to the resonator structure;
locating a gate proximate to a portion of the electronic system;
interrupting the resonator structure at one or more predetermined positions forming a switch, with the electronic system and the gate, the gate receiving a gate voltage and the electronic system based on the gate voltage; wherein the change in inductance induces the resonator structure to change the strength of the coupling between the first device and the second device; and
A superconductor fabrication system for fabricating superconductor devices that perform operations including: