SG11202110013PA - Gate voltage-tunable electron system integrated with superconducting resonator for quantum computing device - Google Patents

Gate voltage-tunable electron system integrated with superconducting resonator for quantum computing device

Info

Publication number
SG11202110013PA
SG11202110013PA SG11202110013PA SG11202110013PA SG11202110013PA SG 11202110013P A SG11202110013P A SG 11202110013PA SG 11202110013P A SG11202110013P A SG 11202110013PA SG 11202110013P A SG11202110013P A SG 11202110013PA SG 11202110013P A SG11202110013P A SG 11202110013PA
Authority
SG
Singapore
Prior art keywords
computing device
gate voltage
quantum computing
system integrated
electron system
Prior art date
Application number
SG11202110013PA
Inventor
Sean Hart
Jay Gambetta
Patryk Gumann
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG11202110013PA publication Critical patent/SG11202110013PA/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/437—Superconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/805—Constructional details for Josephson-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Software Systems (AREA)
  • Computational Mathematics (AREA)
  • Artificial Intelligence (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
SG11202110013PA 2019-04-02 2020-03-18 Gate voltage-tunable electron system integrated with superconducting resonator for quantum computing device SG11202110013PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/373,096 US11621386B2 (en) 2019-04-02 2019-04-02 Gate voltage-tunable electron system integrated with superconducting resonator for quantum computing device
PCT/EP2020/057412 WO2020200782A1 (en) 2019-04-02 2020-03-18 Gate voltage-tunable electron system integrated with superconducting resonator for quantum computing device

Publications (1)

Publication Number Publication Date
SG11202110013PA true SG11202110013PA (en) 2021-10-28

Family

ID=69846476

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202110013PA SG11202110013PA (en) 2019-04-02 2020-03-18 Gate voltage-tunable electron system integrated with superconducting resonator for quantum computing device

Country Status (12)

Country Link
US (2) US11621386B2 (en)
EP (1) EP3948697A1 (en)
JP (1) JP7441581B2 (en)
KR (1) KR102551938B1 (en)
CN (1) CN113661502A (en)
AU (1) AU2020250769B2 (en)
BR (1) BR112021019759A2 (en)
CA (1) CA3135530A1 (en)
IL (1) IL286366B2 (en)
MX (1) MX2021012009A (en)
SG (1) SG11202110013PA (en)
WO (1) WO2020200782A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11727295B2 (en) * 2019-04-02 2023-08-15 International Business Machines Corporation Tunable superconducting resonator for quantum computing devices
US11793089B2 (en) * 2019-09-20 2023-10-17 Microsoft Technology Licensing, Llc Durable hybrid heterostructures and methods for manufacturing the same
US20210126180A1 (en) * 2019-10-24 2021-04-29 Microsoft Technology Licensing, Llc Semiconductor-superconductor hybrid device
US11107966B2 (en) * 2019-11-11 2021-08-31 International Business Machines Corporation Two-sided Majorana fermion quantum computing devices fabricated with ion implant methods
US11107965B2 (en) * 2019-11-11 2021-08-31 International Business Machines Corporation Majorana fermion quantum computing devices fabricated with ion implant methods
US11563162B2 (en) * 2020-01-09 2023-01-24 International Business Machines Corporation Epitaxial Josephson junction transmon device
US20220173317A1 (en) * 2020-11-03 2022-06-02 Srinivasan Krishnamurthy Bright entangled photon sources
US11972319B2 (en) 2020-12-03 2024-04-30 International Business Machines Corporation Multimode resonators for resonator induced phase gates
US11934916B2 (en) 2021-03-25 2024-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Electronic device and manufacturing method thereof
US11777478B2 (en) * 2021-12-10 2023-10-03 International Business Machines Corporation DC conversion of half- to quarter-wave resonators for crosstalk suppression in superconducting qubits
CN116013964B (en) * 2023-01-29 2023-06-27 中国人民解放军军事科学院系统工程研究院 Implementation method of tunable two-dimensional material superlattice device
CN116887663A (en) * 2023-09-06 2023-10-13 量子科技长三角产业创新中心 Superconducting quantum circuit and superconducting quantum device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442871A (en) * 1987-08-10 1989-02-15 Toshiba Corp Superconducting element
DE3889263T2 (en) * 1987-08-24 1994-08-11 Semiconductor Energy Lab Electronic devices using superconducting materials.
JP3269720B2 (en) * 1993-11-30 2002-04-02 富士通株式会社 Superconducting integrated circuits
JPH08279629A (en) * 1995-04-07 1996-10-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor-coupled superconducting element
JP2004533107A (en) 2001-03-09 2004-10-28 ウイスコンシン アラムニ リサーチ ファンデーション Solid-state quantum dot devices and quantum computation methods using nanostructured logic gates
DE10306076B4 (en) 2003-02-08 2005-02-17 Hahn-Meitner-Institut Berlin Gmbh Quantum dot of electrically conductive carbon, method of manufacture and application
JP2005260025A (en) * 2004-03-12 2005-09-22 Nippon Telegr & Teleph Corp <Ntt> Magnetic flux transfer device
JP2011129594A (en) * 2009-12-15 2011-06-30 Nec Corp Superconducting quantum arithmetic circuit
US9379303B2 (en) 2011-06-14 2016-06-28 Glocbalfoundries Inc. Modular array of fixed-coupling quantum systems for quantum information processing
TW201312558A (en) 2011-09-02 2013-03-16 Nat Univ Tsing Hua Graphene singlet-triplet valley qubit device and the method of the same
US20160104073A1 (en) * 2012-12-05 2016-04-14 The United States Of America As Represented By The Secretary Of Commerce Radiation Suppression of Superconducting Quantum Bits Using a Conductive Plane
AU2014234949B2 (en) 2013-03-20 2017-08-17 Newsouth Innovations Pty Limited Quantum computing with acceptor-based qubits
EP3164889B1 (en) 2014-07-02 2023-06-07 University of Copenhagen A semiconductor josephson junction comprising a semiconductor nanowire and superconductor layers thereon
GB2531517A (en) 2014-10-20 2016-04-27 Nokia Technologies Oy Method and apparatus for adiabatic quantum annealing
US9996801B2 (en) 2015-07-20 2018-06-12 University Of Maryland, College Park Microwave-free control of a superconductor-based quantum computer
US10467544B2 (en) * 2015-12-31 2019-11-05 International Business Machines Corporation Multi-qubit tunable coupling architecture using fixed-frequency superconducting qubits
US10042805B2 (en) 2016-01-21 2018-08-07 Northrop Grumman Systems Corporation Tunable bus-mediated coupling between remote qubits

Also Published As

Publication number Publication date
BR112021019759A2 (en) 2022-01-04
IL286366A (en) 2021-10-31
JP2022525909A (en) 2022-05-20
MX2021012009A (en) 2021-10-22
WO2020200782A1 (en) 2020-10-08
AU2020250769A1 (en) 2021-09-30
US20210028345A1 (en) 2021-01-28
KR102551938B1 (en) 2023-07-06
KR20210130209A (en) 2021-10-29
CA3135530A1 (en) 2020-10-08
IL286366B1 (en) 2023-09-01
AU2020250769B2 (en) 2023-06-22
US11621386B2 (en) 2023-04-04
EP3948697A1 (en) 2022-02-09
US20200321508A1 (en) 2020-10-08
JP7441581B2 (en) 2024-03-01
IL286366B2 (en) 2024-01-01
US11683996B2 (en) 2023-06-20
CN113661502A (en) 2021-11-16

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