JPWO2020160540A5 - - Google Patents

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JPWO2020160540A5
JPWO2020160540A5 JP2021544483A JP2021544483A JPWO2020160540A5 JP WO2020160540 A5 JPWO2020160540 A5 JP WO2020160540A5 JP 2021544483 A JP2021544483 A JP 2021544483A JP 2021544483 A JP2021544483 A JP 2021544483A JP WO2020160540 A5 JPWO2020160540 A5 JP WO2020160540A5
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internal cavity
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Priority claimed from PCT/US2020/016403 external-priority patent/WO2020160540A1/en
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レーザービームの特性を実質的に低下させることなく、高品質の青色レーザービームを長期間にわたって提供するための、高パワー高輝度の固体レーザーアセンブリであって、
ａ．内部キャビティを画定するハウジングであって、該内部キャビティが該ハウジングの外部にある環境から隔離されるようにしたハウジングと；
ｂ．固体デバイスであって、該固体デバイスの伝搬面から、４１０ｎｍから５００ｎｍの範囲の波長および該伝搬面で少なくとも約０．５ＭＷ／ｃｍ２のパワー密度を有するレーザービームを、レーザービーム経路に沿って伝搬させるための固体デバイスと；
ｃ．該固体デバイスと光連通し、該レーザービーム経路上にある光学アセンブリと；
を有しており、
ｄ．該固体デバイスおよび該光学アセンブリは、該ハウジング内で該内部キャビティ内に配置され、それによって、該固体デバイスおよび該光学アセンブリは、外部環境から隔離されており；
ｅ．該ハウジングは、該光学アセンブリと光連通し該レーザービーム経路上にあるハウジング伝搬面を含み、該ハウジング伝搬面によって、該レーザービームが該レーザービーム経路に沿って該ハウジングから該外部環境に伝達されるようにされており；
ｆ．該ハウジング伝搬面を出る際の該レーザービームは、（ｉ）少なくとも１００Ｗのパワー、および（ｉｉ）１００ｍｍ－ｍｒａｄ未満のＢＰＰのビーム特性を有しており、
ｇ．該内部キャビティにはシリコンベースの汚染源がなく、それにより該固体デバイスの動作中に該内部キャビティ内でのＳｉＯ２の生成が回避されて、該内部キャビティはＳｉＯ２の蓄積を回避され、それにより該ビーム特性の劣化速度が２．３％／ｋｈｒｓ以下となるようにされている、アセンブリ。 A high power, high brightness, solid state laser assembly for providing a high quality blue laser beam for an extended period of time without substantially degrading laser beam properties, comprising:
a. a housing defining an internal cavity such that the internal cavity is isolated from the environment external to the housing;
b. A solid state device propagating from a propagation plane of said solid state device a laser beam having a wavelength in the range of 410 nm to 500 nm and a power density at said propagation plane of at least about 0.5 MW/cm along a laser beam path. a solid state device for;
c. an optical assembly in optical communication with the solid state device and in the laser beam path;
and
d. the solid state device and the optical assembly are disposed within the internal cavity within the housing, thereby isolating the solid state device and the optical assembly from an external environment;
e. The housing includes a housing propagation surface in optical communication with the optical assembly and on the laser beam path, the housing propagation surface transmitting the laser beam along the laser beam path from the housing to the external environment. is designed to;
f. the laser beam upon exiting the housing propagation surface has a beam characteristic of (i) a power of at least 100 W and (ii) a BPP of less than 100 mm-mrad;
g. The internal cavity is free of silicon-based contamination sources, thereby avoiding the formation of SiO2 within the internal cavity during operation of the solid-state device, and the internal cavity is free from accumulation of SiO2, thereby preventing the beam from An assembly adapted to have a property degradation rate of 2.3%/khrs or less. ａ．該固体デバイスは、ラマンファイバーレーザー、ダイオードレーザー、および結晶ベースのラマンレーザーからなる群から選択され、該光学アセンブリは、コリメート光学系、集束光学系、レンズ、ミラー、およびビーム結合光学系からなる群から選択され；
ｂ．該ビーム特性は、約２０ｎｍ以下の帯域幅をさらに含み、
ｃ．該ハウジング伝搬面は、ウインドウおよびファイバー面からなる群から選択され；
ｄ．該ＢＰＰは約４０ｍｍ－ｍｒａｄ未満であり、
ｅ．該伝搬面でのパワー密度は約１ＭＷ／ｃｍ２から約１，０００ＭＷ／ｃｍ２である、
請求項１に記載のアセンブリ。 a. The solid-state device is selected from the group consisting of Raman fiber lasers, diode lasers, and crystal-based Raman lasers, and the optical assembly consists of collimating optics, focusing optics, lenses, mirrors, and beam combining optics. selected from;
b. the beam characteristics further include a bandwidth of about 20 nm or less;
c. the housing propagation face is selected from the group consisting of a window and a fiber face;
d. the BPP is less than about 40 mm-mrad;
e. power density at the propagation plane is from about 1 MW/cm to about 1,000 MW/cm;
The assembly of Claim 1. 該固体デバイスは、ラマンファイバーレーザー、ダイオードレーザー、および結晶ベースのラマンレーザーからなる群から選択され；該レーザービームのパワーは約１００Ｗから約１，０００Ｗであり；
ｂ．該ビーム特性は、約２０ｎｍ以下の帯域幅をさらに含み；
ｃ．該伝搬面でのパワー密度は約０．５ＭＷ／ｃｍ２から約１，０００ＭＷ／ｃｍ２であり、
ｄ．該ビーム特性の劣化速度は、２．０％／ｋｈｒｓ未満である、
請求項１又は２に記載のアセンブリ。 the solid-state device is selected from the group consisting of Raman fiber lasers, diode lasers, and crystal-based Raman lasers; the power of the laser beam is from about 100 W to about 1,000 W;
b. the beam properties further include a bandwidth of about 20 nm or less;
c. the power density at the propagation plane is from about 0.5 MW/cm to about 1,000 MW/cm;
d. the beam property degradation rate is less than 2.0%/khrs;
3. Assembly according to claim 1 or 2. 該内部キャビティが、少なくとも１％の酸素を含むガスを含み、該固体デバイスの動作中に炭素ベースの汚染物質からＣＯ２が内部キャビティ内に生成され、これにより、該固体デバイスの該伝搬面と該光学アセンブリが炭素の蓄積を回避するようにした、請求項１から３の何れか一項に記載のアセンブリ。 The internal cavity comprises a gas containing at least 1% oxygen, and CO2 is produced within the internal cavity from carbon-based contaminants during operation of the solid-state device, thereby forming a polarizer between the propagating surface of the solid-state device and the 4. An assembly according to any one of the preceding claims, wherein the optical assembly avoids carbon build-up. 該内部キャビティが、少なくとも１０％の酸素を含むガスを含み、該固体デバイスの動作中に炭素ベースの汚染物質からＣＯ２が該内部キャビティ内に生成され、これにより、該固体デバイスの該伝搬面と該光学アセンブリが炭素の蓄積を回避するようにした、請求項１から３の何れか一項に記載のアセンブリ。 wherein the internal cavity comprises a gas containing at least 10% oxygen, and CO2 is generated within the internal cavity from carbon-based contaminants during operation of the solid state device, whereby the propagating surface of the solid state device and the 4. An assembly according to any one of the preceding claims, wherein the optical assembly avoids carbon build-up. 該内部キャビティが、少なくとも４０％の酸素を含むガスを含み、該固体デバイスの動作中に炭素ベースの汚染物質からＣＯ２が該内部キャビティ内に生成され、これにより、該固体デバイスの該伝搬面と該光学アセンブリが炭素の蓄積を回避するようにした、請求項１から３の何れか一項に記載のアセンブリ。 wherein the internal cavity comprises a gas containing at least 40% oxygen, and CO2 is produced within the internal cavity from carbon-based contaminants during operation of the solid state device, whereby the propagating surface of the solid state device and the 4. An assembly according to any one of the preceding claims, wherein the optical assembly avoids carbon build-up. 該内部キャビティが、少なくとも６０％の酸素を含むガスを含み、該固体デバイスの動作中に炭素ベースの汚染物質からＣＯ２が内部キャビティ内に生成され、これにより、該固体デバイスの該伝搬面と該光学アセンブリが炭素の蓄積を回避するようにした、請求項１から３の何れか一項に記載のアセンブリ。 The internal cavity comprises a gas containing at least 60% oxygen, and CO2 is produced within the internal cavity from carbon-based contaminants during operation of the solid-state device, thereby forming a gas between the propagating surface of the solid-state device and the 4. An assembly according to any one of the preceding claims, wherein the optical assembly avoids carbon build-up. 該ビーム特性の劣化速度が２．０％／ｋｈｒｓ以下である、請求項１から７の何れか一項に記載のアセンブリ。 8. An assembly according to any one of the preceding claims, wherein the rate of deterioration of beam properties is less than or equal to 2.0%/khrs. 該ビーム特性の劣化速度が１．８％／ｋｈｒｓ以下である、請求項１から７の何れか一項に記載のアセンブリ。 8. An assembly according to any one of the preceding claims, wherein the beam property degradation rate is less than or equal to 1.8%/khrs. 該パワー密度が、該伝搬面で少なくとも約１ＭＷ／ｃｍ２である、請求項１から９の何れか一項に記載のアセンブリ。 10. The assembly of any one of claims 1-9 , wherein the power density is at least about 1 MW/cm2 in the propagation plane. 該パワー密度が、該伝搬面で少なくとも約５ＭＷ／ｃｍ２である、請求項１から９の何れか一項に記載のアセンブリ。 10. The assembly of any one of claims 1-9 , wherein the power density is at least about 5 MW/cm2 in the propagation plane. 該パワー密度は、該伝搬面で少なくとも約１０ＭＷ／ｃｍ２である、請求項１から９の何れか一項に記載のアセンブリ。 10. The assembly of any one of claims 1-9 , wherein the power density is at least about 10 MW/cm2 in the propagation plane. 該パワー密度は、該伝搬面で少なくとも約２０ＭＷ／ｃｍ２である、請求項１から９の何れか一項に記載のアセンブリ。 10. The assembly of any one of claims 1-9 , wherein the power density is at least about 20 MW/cm2 in the propagation plane. 該固体デバイスがＴＯ－９Ｃａｎを含む、請求項１から１３の何れか一項に記載のアセンブリ。 14. The assembly of any one of claims 1-13 , wherein the solid state device comprises TO-9Can. 該内部キャビティはシリコンベースの汚染物質の供給源がなく、それによって、該固体デバイスの動作中に該内部キャビティ内にＳｉＯ２が生成されない、請求項１から１４の何れか一項に記載のアセンブリ。 15. The assembly of any one of claims 1-14 , wherein the internal cavity is free of sources of silicon-based contaminants, whereby no SiO2 is generated within the internal cavity during operation of the solid state device. レーザービームの特性を実質的に低下させることなく、高品質の青色レーザービームを長期間にわたって提供するための、高パワー高輝度の固体レーザーアセンブリであって、
ａ．内部キャビティを画定するハウジングであって、該内部キャビティが該ハウジングの外部にある環境から隔離されるようにしたハウジングと；
ｂ．複数のレーザービームを複数のファセットから複数のレーザービーム経路に沿って伝搬させるための複数のダイオードレーザーデバイスであって、該複数のレーザービームが４００ｎｍから５００ｎｍの範囲の波長を有し、各レーザービームが該ファセットにおいて少なくとも約０．５ＭＷ／ｃｍ２のパワー密度を有する、複数のダイオードレーザーデバイスと；
ｃ．該ダイオードレーザーデバイスと光連通し、該レーザービーム経路上にある光学アセンブリと；
を有しており、
ｄ．該光学アセンブリは、該複数のレーザービームを結合して、結合レーザービーム経路に沿う結合レーザービームを提供し；
ｅ．該複数のダイオードレーザーデバイスおよび該光学アセンブリは、該ハウジング内で該内部キャビティに配置され、それによって、該複数のダイオードレーザーデバイスおよび該光学アセンブリが外部環境から隔離され；
ｆ．該ハウジングは、該光学アセンブリと該光連通して該結合レーザービーム経路上にあるハウジング伝搬面を含み、それにより、該結合レーザービームが該結合レーザービーム経路に沿って該ハウジングから該外部環境に伝達されるようにされ；
ｇ．該ハウジング伝搬面を出る際の該結合レーザービームは、（ｉ）少なくとも１００Ｗのパワー、および（ｉｉ）４０ｍｍ－ｍｒａｄ未満のＢＰＰのビーム特性を有しており、
ｈ．該内部キャビティにはシリコンベースの汚染源がなく、それにより該複数のダイオードレーザーデバイスの動作中に該内部キャビティ内でＳｉＯ２が生成されず、これにより、該内部キャビティはＳｉＯ２の蓄積を回避し、該ビーム特性の劣化速度が２．３％／ｋｈｒｓ以下となるようにされている、アセンブリ。 A high power, high brightness, solid state laser assembly for providing a high quality blue laser beam for an extended period of time without substantially degrading laser beam properties, comprising:
a. a housing defining an internal cavity such that the internal cavity is isolated from the environment external to the housing;
b. A plurality of diode laser devices for propagating a plurality of laser beams from a plurality of facets along a plurality of laser beam paths, the plurality of laser beams having a wavelength ranging from 400 nm to 500 nm, each laser beam has a power density at the facet of at least about 0.5 MW/cm; and
c. an optical assembly in optical communication with the diode laser device and in the laser beam path;
and
d. the optical assembly combines the plurality of laser beams to provide a combined laser beam along a combined laser beam path;
e. the plurality of diode laser devices and the optical assembly are disposed within the housing in the internal cavity, thereby isolating the plurality of diode laser devices and the optical assembly from an external environment;
f. The housing includes a housing propagation surface in optical communication with the optical assembly and on the combined laser beam path such that the combined laser beam travels along the combined laser beam path from the housing to the external environment. to be communicated;
g. the combined laser beam upon exiting the housing propagation surface has beam characteristics of (i) a power of at least 100 W and (ii) a BPP of less than 40 mm-mrad;
h. The internal cavity is free of silicon-based contamination sources, so that no SiO2 is generated within the internal cavity during operation of the multiple diode laser device, thereby avoiding the accumulation of SiO2 in the internal cavity, An assembly adapted to have a rate of beam property degradation of 2.3%/khrs or less. ａ．該ビーム特性が約１５ｎｍ以下の帯域幅をさらに含み；
ｂ．該ハウジング伝搬面は、ウインドウおよびファイバー面からなる群から選択され；
ｃ．該ＢＰＰが約１５ｍｍ－ｍｒａｄ未満であり；
ｄ．該ファセットの伝搬面でのパワー密度は約０．５ＭＷ／ｃｍ２から約１，０００ＭＷ／ｃｍ２である；
請求項１６に記載のアセンブリ。 a. said beam characteristic further comprising a bandwidth of about 15 nm or less;
b. the housing propagation face is selected from the group consisting of a window and a fiber face;
c. the BPP is less than about 15 mm-mrad;
d. power density at the propagation plane of the facet is from about 0.5 MW/cm2 to about 1,000 MW/cm2;
17. Assembly according to claim 16. ａ．該ビーム特性が約１５ｎｍ以下の帯域幅をさらに含み、該結合レーザービームのパワーは少なくとも約５００Ｗであり；
ｂ．該ハウジング伝搬面は、ウインドウおよびファイバー面からなる群から選択され；
ｃ．該ＢＰＰは約３０ｍｍ－ｍｒａｄ未満であり；
ｄ．該ファセットの伝搬面でのパワー密度は約０．５ＭＷ／ｃｍ２から約１，０００ＭＷ／ｃｍ２である、
請求項１６または１７に記載のアセンブリ。 a. said beam characteristic further comprising a bandwidth of about 15 nm or less, and said combined laser beam power is at least about 500 W;
b. the housing propagation face is selected from the group consisting of a window and a fiber face;
c. the BPP is less than about 30 mm-mrad;
d. power density at the propagation plane of the facet is from about 0.5 MW/cm to about 1,000 MW/cm;
18. Assembly according to claim 16 or 17 . 該内部キャビティが、少なくとも１％の酸素を含むガスを含み、これにより、該複数のダイオードレーザーデバイスの動作中に炭素ベースの汚染物質からＣＯ２が該内部キャビティ内に生成され、それにより、該ファセットの伝搬面および該光学アセンブリが炭素の蓄積を回避するようにされた、請求項１６から１８の何れか一項に記載のアセンブリ。 wherein the internal cavity comprises a gas comprising at least 1% oxygen, whereby CO2 is produced within the internal cavity from carbon-based contaminants during operation of the plurality of diode laser devices, whereby the facets are 19. An assembly according to any one of claims 16 to 18 , wherein the propagation surface of and said optical assembly are adapted to avoid carbon build-up. 該内部キャビティが、少なくとも１０％の酸素を含むガスを含み、これにより、該複数のダイオードレーザーデバイスの動作中に炭素ベースの汚染物質からＣＯ２が該内部キャビティ内に生成され、それにより、該ファセットの伝搬面および該光学アセンブリが炭素の蓄積を回避するようにされた、請求項１６から１８の何れか一項に記載のアセンブリ。 wherein the internal cavity comprises a gas comprising at least 10% oxygen, whereby CO2 is generated within the internal cavity from carbon-based contaminants during operation of the plurality of diode laser devices, whereby the facets are 19. An assembly according to any one of claims 16 to 18 , wherein the propagation surface of and said optical assembly are adapted to avoid carbon build-up. 該内部キャビティが、少なくとも４０％の酸素を含むガスを含み、これにより、該複数のダイオードレーザーデバイスの動作中に炭素ベースの汚染物質からＣＯ２が該内部キャビティ内に生成され、それにより、該ファセットの伝搬面および該光学アセンブリが炭素の蓄積を回避するようにされた、請求項１６から１８の何れか一項に記載のアセンブリ。 wherein the internal cavity comprises a gas comprising at least 40% oxygen, whereby CO2 is produced within the internal cavity from carbon-based contaminants during operation of the plurality of diode laser devices, whereby the facets are 19. An assembly according to any one of claims 16 to 18 , wherein the propagation surface of and said optical assembly are adapted to avoid carbon build-up. 該内部キャビティが、少なくとも６０％の酸素を含むガスを含み、これにより、該複数のダイオードレーザーデバイスの動作中に炭素ベースの汚染物質からＣＯ２が該内部キャビティ内に生成され、それにより、該ファセットの伝搬面および該光学アセンブリが炭素の蓄積を回避するようにされた、請求項１６から１８の何れか一項に記載のアセンブリ。 wherein the internal cavity comprises a gas comprising at least 60% oxygen, whereby CO2 is produced within the internal cavity from carbon-based contaminants during operation of the plurality of diode laser devices, whereby the facets are 19. An assembly according to any one of claims 16 to 18 , wherein the propagation surface of and said optical assembly are adapted to avoid carbon build-up. 該内部キャビティが、少なくとも２０％の酸素を含むガスを含み、これにより、該複数のダイオードレーザーデバイスの動作中に炭素ベースの汚染物質からＣＯ２が該内部キャビティ内に生成され、それにより、該ファセットの伝搬面および該光学アセンブリが炭素の蓄積を回避するようにされた、請求項１６から１８の何れか一項に記載のアセンブリ。 wherein the internal cavity comprises a gas comprising at least 20% oxygen, whereby CO2 is produced within the internal cavity from carbon-based contaminants during operation of the plurality of diode laser devices, whereby the facets are 19. An assembly according to any one of claims 16 to 18 , wherein the propagation surface of and said optical assembly are adapted to avoid carbon build-up. 該内部キャビティのシリコンベースの汚染物質の量が、０．００１ｇ未満である、請求項１６から２３の何れか一項に記載のアセンブリ。 24. The assembly of any one of claims 16-23 , wherein the amount of silicon-based contaminants in the internal cavity is less than 0.001 g. 該内部キャビティのシリコンベースの汚染物質の量が、０．０００１ｇ未満である、請求項１６から２３に記載の何れか一項にアセンブリ。 24. The assembly of any one of claims 16-23 , wherein the amount of silicon-based contaminants in the internal cavity is less than 0.0001 g. 該内部キャビティのシリコンベースの汚染物質の量が、０．００００１ｇ未満である、請求項１６から２３の何れか一項に記載のアセンブリ。 24. The assembly of any one of claims 16-23 , wherein the amount of silicon-based contaminants in the internal cavity is less than 0.00001 g. 該内部キャビティのシリコンの量が０．０１ｐｐｍ未満である、請求項１６から２３の何れか一項に記載のアセンブリ。 24. The assembly of any one of claims 16-23 , wherein the amount of silicon in the internal cavity is less than 0.01 ppm. 該内部キャビティのシリコンの量が０．００１ｐｐｍ未満である、請求項１６から２３の何れか一項に記載のアセンブリ。 24. The assembly of any one of claims 16-23 , wherein the amount of silicon in the internal cavity is less than 0.001 ppm. 該内部キャビティのシリコンの量が０．００１ｐｐｍ未満である、請求項１６から２３の何れか一項に記載のアセンブリ。 24. The assembly of any one of claims 16-23 , wherein the amount of silicon in the internal cavity is less than 0.001 ppm. 該複数のダイオードレーザーデバイスがＴＯ－９Ｃａｎを含む、請求項１６から２９の何れか一項に記載のアセンブリ。 30. The assembly of any one of claims 16-29 , wherein the plurality of diode laser devices comprises TO- 9Can . 該内部キャビティがシリコンベースの汚染物質の供給源がなく、それによって、該複数のダイオードレーザーデバイスの動作中に、該内部キャビティ内にＳｉＯ２が生成されない、請求項１６から３０の何れか一項に記載のアセンブリ。 31. Any one of claims 16 to 30 , wherein the internal cavity is free of sources of silicon-based contaminants, whereby no SiO2 is generated within the internal cavity during operation of the plurality of diode laser devices . Assembly as described. 該パワー密度が、該ファセットの伝搬面で少なくとも約５ＭＷ／ｃｍ２である、請求項１６から３１の何れか一項に記載のアセンブリ。32. The assembly of any one of claims 16-31, wherein the power density is at least about 5 MW/cm2 in the propagation plane of the facets. 該パワー密度が、該ファセットの伝搬面で少なくとも約１０ＭＷ／ｃｍ２である、請求項１６から３１の何れか一項に記載のアセンブリ。32. The assembly of any one of claims 16-31, wherein the power density is at least about 10 MW/cm2 in the propagation plane of the facets. 該パワー密度が、該ファセットの伝搬面で少なくとも約２０ＭＷ／ｃｍ２である、請求項１６から３１の何れか一項に記載のアセンブリ。32. The assembly of any one of claims 16-31, wherein the power density is at least about 20 MW/cm2 in the propagation plane of the facets. レーザービームの特性を実質的に低下させることなく、高品質の青色レーザービームを長期間にわたって提供する高パワー高輝度の固体レーザーアセンブリであって、
ａ．隔離された環境をなす内部キャビティを画定するハウジングと；
ｂ．該ハウジングの該内部キャビティの該隔離された環境内に配置されて、青色レーザービームが伝搬、透過、または反射する複数の光学活性面であって、該光学活性面の少なくとも１つが固体レーザーデバイス上に配置されている、複数の光学活性面と；
を有し、
ｃ．該レーザービームは、１つまたは複数の該光学活性面で少なくとも約０．５ＭＷ／ｃｍ２のパワー密度を有し、
ｄ．該内部キャビティにはシリコンベースの汚染源がなく、それにより該固体レーザーデバイスの動作中に該内部キャビティ内でのＳｉＯ２の生成が回避され、該内部キャビティが酸素を含むガスを含み、これにより、該固体レーザーデバイスの動作中に炭素ベースの汚染物質からＣＯ２が内部キャビティ内に生成され；
ｅ．これにより、該複数の光学活性面が炭素およびＳｉＯ２の蓄積を回避して、該青色レーザービームのパワーの劣化速度が２．３％／ｋｈｒｓ以下となるようにされた；
アセンブリ。 A high power, high brightness, solid state laser assembly that provides a high quality blue laser beam for an extended period of time without substantially degrading laser beam properties, comprising:
a. a housing defining an internal cavity that provides an isolated environment;
b. a plurality of optically active surfaces disposed within the isolated environment of the internal cavity of the housing for propagating, transmitting, or reflecting a blue laser beam, at least one of the optically active surfaces being on a solid state laser device; a plurality of optically active surfaces disposed in;
has
c. said laser beam has a power density of at least about 0.5 MW/cm at one or more of said optically active surfaces;
d. The internal cavity is free of silicon-based contamination sources, thereby avoiding the formation of SiO2 within the internal cavity during operation of the solid-state laser device, and the internal cavity contains an oxygen-containing gas, whereby the CO2 is produced within the internal cavity from carbon-based contaminants during operation of the solid-state laser device;
e. This avoided the accumulation of carbon and SiO on the plurality of optically active surfaces such that the power degradation rate of the blue laser beam was less than or equal to 2.3%/khrs;
assembly. 少なくとも約１０％の酸素を含む、請求項３５に記載のアセンブリ。36. The assembly of Claim 35, comprising at least about 10% oxygen. 少なくとも約２０％の酸素を含む、請求項３５に記載のアセンブリ。36. The assembly of Claim 35, comprising at least about 20% oxygen. 少なくとも約４０％の酸素を含む、請求項３５に記載のアセンブリ。36. The assembly of Claim 35, comprising at least about 40% oxygen. 少なくとも約６０％の酸素を含む、請求項３５に記載のアセンブリ。36. The assembly of Claim 35, comprising at least about 60% oxygen. 該複数の光学活性面が炭素及びＳｉＯ２の蓄積がない、請求項３５から３９の何れか一項に記載のアセンブリ。40. The assembly of any one of claims 35-39, wherein the plurality of optically active surfaces are free of carbon and SiO2 accumulation. 該劣化速度が２．０％／ｋｈｒｓ以下である、請求項１から４０の何れか一項に記載のアセンブリ。 41. The assembly of any one of claims 1-40, wherein the degradation rate is 2.0%/ khrs or less. 該劣化速度が１．８％／ｋｈｒｓ以下である、請求項１から４０の何れか一項に記載のアセンブリ。 41. The assembly of any one of claims 1-40, wherein the degradation rate is 1.8%/ khrs or less. ５，０００時間以上の延長された寿命を有することを特徴とする、請求項１から４２の何れか一項に記載のアセンブリ。43. Assembly according to any one of the preceding claims, characterized in that it has an extended life of 5,000 hours or more. １０，０００時間以上の延長された寿命を有することを特徴とする、請求項１から４２の何れか一項に記載のアセンブリ。 43. Assembly according to any one of the preceding claims, characterized in that it has an extended life of 10,000 hours or more. ３０，０００時間以上の延長された寿命を有することを特徴とする、請求項１から４２の何れか一項に記載のアセンブリ。 43. Assembly according to any one of the preceding claims, characterized in that it has an extended life of 30,000 hours or more. ５０，０００時間以上の延長された寿命を有することを特徴とする、請求項１から４２の何れか一項に記載のアセンブリ。 43. Assembly according to any one of the preceding claims, characterized in that it has an extended life of 50,000 hours or more. ７０，０００時間以上の延長された寿命を有することを特徴とする、請求項１から４２の何れか一項に記載のアセンブリ。 43. Assembly according to any one of the preceding claims, characterized in that it has an extended life of 70,000 hours or more. レーザービームの特性を実質的に低下させることなく、高品質の青色レーザービームを長期間にわたって提供する、レーザーシステムに統合するための、高パワー高輝度の固体レーザーデバイスパッケージであって、
ａ．外部にある外部環境から隔離された内部キャビティを画定するハウジングであって、
ｂ．該内部キャビティの一部を画定するウインドウを有するハウジングと；
ｃ．固体デバイスであって、該固体デバイスの伝搬面から、レーザービーム経路に沿って、４１０ｎｍから５００ｎｍの範囲の波長を有し、該伝搬面で少なくとも約０．５ＭＷ／ｃｍ２のパワー密度を有するレーザービームを伝搬させるための固体デバイスと；
を有し、
ｄ．該ウインドウが、該固体デバイスと光連通してレーザービーム経路上にあり、
ｅ．該固体デバイスは、該ハウジング内で該内部キャビティに配置され、前記ウインドウの内面が該外部環境に露出しておらず、それによって該固体デバイスおよび前記ウインドウの前記内面が外部環境から隔離されており；
ｆ．それにより、該レーザービームは、該レーザービーム経路に沿って該ハウジングから該ウインドウを通って該外部環境に伝達され；
ｇ．該内部キャビティにはシリコンベースの汚染源がなく、それにより該固体デバイスの動作中に該内部キャビティ内でのＳｉＯ２の生成が回避されて、該内部キャビティがＳｉＯ２の蓄積を回避し、それにより該レーザービームの特性の劣化速度は２．３％／ｋｈｒｓ以下とされ；
ｈ．該内部キャビティは少なくとも１％の酸素を含むガスを含み、それにより、該固体デバイスの動作中に炭素ベースの汚染物質からＣＯ２が該内部キャビティ内に生成されて、該固体デバイスの該伝搬面および該ウインドウの該内面に炭素が蓄積されないままとなるようにされた、パッケージ。 A high power, high brightness, solid state laser device package for integration into a laser system that provides a high quality blue laser beam for an extended period of time without substantially degrading laser beam properties, comprising:
a. A housing defining an internal cavity isolated from an external environment, comprising:
b. a housing having a window defining a portion of the internal cavity;
c. A laser beam having a wavelength in the range of 410 nm to 500 nm along the laser beam path from a plane of propagation of the solid state device and having a power density of at least about 0.5 MW/cm2 at the plane of propagation. a solid state device for propagating the
has
d. the window is on the laser beam path in optical communication with the solid state device;
e. The solid-state device is disposed within the housing in the internal cavity, wherein the inner surface of the window is not exposed to the external environment, thereby isolating the solid-state device and the inner surface of the window from the external environment. ;
f. thereby transmitting the laser beam along the laser beam path from the housing through the window to the external environment;
g. The internal cavity is free of silicon-based contamination sources, thereby avoiding the formation of SiO2 within the internal cavity during operation of the solid-state device, thereby avoiding the accumulation of SiO2 in the internal cavity, thereby preventing the laser from the rate of deterioration of beam properties is less than or equal to 2.3%/khrs;
h. The internal cavity comprises a gas containing at least 1% oxygen, whereby CO2 is generated within the internal cavity from carbon-based contaminants during operation of the solid-state device to produce the propagating surface of the solid-state device and A package wherein the inner surface of the window remains free of carbon build-up. 固体デバイスが単一のダイオードレーザーからなる、請求項４８に記載のパッケージ。 49. The package of claim 48 , wherein the solid state device consists of a single diode laser. 該ダイオードレーザーがＴＯ－９Ｃａｎである、請求項４９に記載のパッケージ。 50. The package of Claim 49 , wherein said diode laser is a TO-9Can. 該固体デバイスが複数のダイオードレーザーからなる、請求項４８に記載のパッケージ。 49. The package of Claim 48 , wherein said solid state device comprises a plurality of diode lasers. 該複数のダイオードレーザーがＴＯ－９Ｃａｎである、請求項５１に記載のパッケージ。 52. The package of claim 51 , wherein said plurality of diode lasers are TO-9Can. 該パワー密度が少なくとも約１０ＭＷ／ｃｍ２であり、該レーザービームが少なくとも約２Ｗのパワーを有し、該劣化速度が２．０％／ｋｈｒｓ未満である、請求項４８から５２の何れか一項に記載のパッケージ。 53. Any one of claims 48-52, wherein the power density is at least about 10 MW/cm2, the laser beam has a power of at least about 2 W, and the degradation rate is less than 2.0%/ khrs . Package as described. 該パワー密度が少なくとも約５ＭＷ／ｃｍ２であり、該レーザービームが少なくとも約１．５Ｗのパワーを有し、該劣化速度が１．８％／ｋｈｒｓである、請求項４８から５２の何れか一項に記載のパッケージ。 53. Any one of claims 48-52, wherein the power density is at least about 5 MW/cm2, the laser beam has a power of at least about 1.5 W, and the degradation rate is 1.8%/ khrs . package as described. 該パワー密度が少なくとも約１５ＭＷ／ｃｍ２であり、該レーザービームが少なくとも約５Ｗのパワーを有し、該劣化速度が２．３％／ｋｈｒｓである、請求項４８から５２の何れか一項に記載のパッケージ。 53. Any one of claims 48-52, wherein the power density is at least about 15 MW/cm2, the laser beam has a power of at least about 5 W, and the degradation rate is 2.3%/ khrs . package. 少なくとも１０％の酸素を含む、請求項４８から５５の何れか一項に記載のパッケージ。 56. Package according to any one of claims 48 to 55 , comprising at least 10% oxygen. 少なくとも４０％の酸素を含む、請求項４８から５５の何れか一項に記載のパッケージ。 56. The package of any one of claims 48-55 , comprising at least 40% oxygen. 少なくとも６０％の酸素を含む、請求項４８から５５の何れか一項に記載のパッケージ。 56. Package according to any one of claims 48 to 55 , comprising at least 60% oxygen. 該シリコンベースの汚染物質の供給源が、シロキサン、重合シロキサン、線状シロキサン、環状シロキサン、シクロメチコーン、およびポリシロキサンからなる群から選択される、請求項４８から５８の何れか一項に記載のパッケージ。 59. Any one of claims 48-58 , wherein the source of silicon-based contaminants is selected from the group consisting of siloxanes, polymeric siloxanes, linear siloxanes, cyclic siloxanes, cyclomethicones, and polysiloxanes. package . 該炭素ベースの汚染物質の供給源が、溶媒残留物、油、指紋、および炭化水素からなる群から選択される、請求項４８から５８の何れか一項に記載のパッケージ。
 59. The package of any one of claims 48-58 , wherein the source of carbon-based contaminants is selected from the group consisting of solvent residues, oils, fingerprints, and hydrocarbons.
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