JPWO2020154136A5 - - Google Patents
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- JPWO2020154136A5 JPWO2020154136A5 JP2021542140A JP2021542140A JPWO2020154136A5 JP WO2020154136 A5 JPWO2020154136 A5 JP WO2020154136A5 JP 2021542140 A JP2021542140 A JP 2021542140A JP 2021542140 A JP2021542140 A JP 2021542140A JP WO2020154136 A5 JPWO2020154136 A5 JP WO2020154136A5
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- 230000005855 radiation Effects 0.000 claims description 106
- 239000013078 crystal Substances 0.000 claims description 50
- 230000003287 optical effect Effects 0.000 claims description 19
- 230000003252 repetitive effect Effects 0.000 claims description 5
- 238000001228 spectrum Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 2
- 230000010287 polarization Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 claims description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical group [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 1
- 238000005086 pumping Methods 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 230000005284 excitation Effects 0.000 description 2
Description
一側面では、本発明による基板上の層を焼鈍するための光学装置は、複数の周波数変換される繰り返しパルス固体レーザを備える。各レーザは、電磁スペクトルの紫外線領域内の波長と、相互に直交する第１の横軸および第２の横軸によって特徴付けられる断面と、第１の横軸における約５０を上回るビーム品質係数Ｍ２と、第２の横軸における約２０を上回るビーム品質係数Ｍ２とを有する出力ビームを送達する。各出力ビームにおけるレーザパルスは、約１００ミリジュールを上回るパルスエネルギーと、約１００ヘルツを上回るパルス繰り返し周波数とを有する。光学装置はさらに、ラインプロジェクタを含み、ラインプロジェクタは、出力ビームを受光し、出力ビームをラインビームに形成し、ラインビームを層上に投射するように配列される。ラインビームは、層上に長さと幅とを有する。
本発明は、例えば、以下を提供する。
（項目１）
基板上の層を焼鈍するための光学装置であって、
複数の周波数変換される繰り返しパルス固体レーザであって、前記複数の周波数変換される繰り返しパルス固体レーザの各々が、電磁スペクトルの紫外線領域内の波長を有する出力ビームを送達し、各出力ビームは、相互に直交する第１の横軸および第２の横軸によって特徴付けられる断面を有し、前記第１の横軸におけるビーム品質係数Ｍ
２
が、約５０を上回り、前記第２の横軸におけるビーム品質係数Ｍ
２
が、約２０を上回り、レーザパルスが、約１００ミリジュールを上回るパルスエネルギーを有し、パルス繰り返し周波数が、約１００ヘルツを上回る、複数の周波数変換される繰り返しパルス固体レーザと、
前記出力ビームを受光し、前記出力ビームをラインビームに形成し、前記ラインビームを前記層上に投射するように配列されるラインプロジェクタであって、前記ラインビームは、前記層上に長さと幅とを有する、ラインプロジェクタと
を備える、光学装置。
（項目２）
前記第１の横軸における前記ビーム品質係数Ｍ
２
は、約２００を上回る、項目１に記載の装置。
（項目３）
各出力ビームは、前記ラインビームの全長に寄与する、項目１に記載の装置。
（項目４）
前記周波数変換される繰り返しパルス固体レーザの各々は、レーザ共振器を含み、前記レーザ共振器は、１つ以上のダイオードレーザアレイによって光学的に励起される利得要素を有し、前記１つ以上のダイオードレーザアレイは、前記第１の横軸における第１の寸法と前記第２の横軸における第２の寸法とを有する利得容積を前記利得要素内に提供するように配列されている、項目１に記載の装置。
（項目５）
前記第１の横軸の寸法は、前記第２の横軸の寸法の３倍以上である、項目４に記載の装置。
（項目６）
前記レーザ共振器は、前記第２の横軸においてのみ光パワーを有する第１の共振器ミラーと第２の共振器ミラーとの間に形成される、項目５に記載の装置。
（項目７）
前記レーザ共振器は、前記利得要素の特性である前記電磁スペクトルの近赤外線領域内の波長を有する基本放射ビームを生み出し、前記レーザ共振器は、番号順に第１の光学非線形結晶および第２の光学非線形結晶に前記基本放射ビームを送達し、前記第１の光学非線形結晶は、前記基本放射ビームから第２高調波放射ビームを発生させるように配列され、前記第２の光学非線形結晶は、前記第２高調波放射ビームの発生の後、前記第２高調波放射ビームを残留基本放射ビームと和周波数混合することによって前記出力ビームを発生させるように配列される、項目４に記載の装置。
（項目８）
前記第１の横軸および前記第２の横軸における前記第２高調波放射ビームのＭ
２
値は、前記基本放射ビームの対応するＭ
２
値を上回り、前記第１の横軸および前記第２の横軸における前記出力ビームのＭ
２
値は、前記第２高調波放射ビームの対応する値を上回る、項目７に記載の装置。
（項目９）
前記第１の横軸における前記第２高調波放射ビームの前記Ｍ
２
値は、前記第１の横軸における前記基本放射ビームの前記Ｍ
２
値の少なくとも２倍である、項目８に記載の装置。
（項目１０）
前記第１の横軸における前記出力ビームの前記Ｍ
２
値は、前記第１の横軸における前記第２高調波放射の前記Ｍ
２
値の１．５倍を上回る、項目８に記載の装置。
（項目１１）
前記第１の横軸における前記出力ビームの前記Ｍ
２
値は、前記第１の横軸における前記残留基本放射の前記Ｍ
２
値の１．５倍を上回る、項目８に記載の装置。
（項目１２）
前記出力ビームは、３４０ナノメートル～３６０ナノメートルの範囲内の波長を有する、項目７に記載の装置。
（項目１３）
前記レーザパルスは、約１０ナノ秒を上回る半値全幅パルス持続時間を有する、項目１に記載の装置。
（項目１４）
前記出力ビームは、直線偏光させられる、項目１に記載の装置。
（項目１５）
前記層は、シリコンから作製される、項目１に記載の装置。
（項目１６）
固体レーザ装置であって、
２つの共振器ミラーの間に形成される共振器の中に位置する利得要素であって、前記利得要素は、スラブの形態であり、励起放射によってエネルギー付与され、エネルギー付与された共振器は、基本放射の繰り返しパルスビームを生み出し、前記基本放射のビームは、相互に直交する第１の横軸および第２の横軸を有し、前記第１の横軸におけるビーム品質係数Ｍ
２
は、５０を上回り、前記第２の横軸におけるビーム品質係数Ｍ
２
は、１０を上回る、利得要素と、
第１の非線形結晶であって、前記基本放射のビームは、前記第１の非線形結晶の中へ指向され、前記基本放射のビームの一部が、第２高調波発生によって第２高調波放射のビームに変換され、基本放射の残留ビームを残す、第１の非線形結晶と、
第２の非線形結晶であって、前記第２高調波放射のビームおよび前記基本放射の残留ビームは両方とも、前記第２の非線形結晶の中へ指向され、それによって、和周波数混合によって第３高調波放射のビームを発生させ、残留基本放射および残留第２高調波放射の共に伝搬するビームを残し、前記第３高調波放射のビームは、前記第１の横軸における５０を上回るビーム品質係数Ｍ
２
と、前記第２の横軸における２０を上回るビーム品質係数Ｍ
２
と、約１００ミリジュールを上回るパルスエネルギーとを有する、第２の非線形結晶と
を備える、固体レーザ装置。
（項目１７）
前記第３高調波放射のビームの前記ビーム品質係数Ｍ
２
は、前記第１の横軸において約２００を上回る、項目１６に記載の装置。
（項目１８）
前記利得要素は、ネオジムドープイットリウムアルミニウムガーネット（Ｎｄ
３＋
ドープＹＡＧ）結晶である、項目１６に記載の装置。
（項目１９）
前記第１の非線形結晶は、ＬＢＯから作製される、項目１６に記載の装置。
（項目２０）
前記第１の非線形結晶は、前記基本放射のビームのタイプ１周波数２倍化のために配列される、項目１６に記載の装置。
（項目２１）
前記第２の非線形結晶は、ＬＢＯから作製される、項目１６に記載の装置。
（項目２２）
前記第２の非線形結晶は、前記第２高調波放射のビームと前記残留基本放射のビームとのタイプ１和周波数混合のために配列される、項目１６に記載の装置。
（項目２３）
第３の非線形結晶をさらに備え、残留基本放射および残留第２高調波放射の前記共に伝搬するビームは、前記第３の非線形結晶の中へ指向され、それによって、和周波数混合によって第３高調波放射の別のビームを発生させる、項目１６に記載の装置。
（項目２４）
前記第３高調波放射の２つのビームが、偏光合成される、項目２３に記載の装置。
（項目２５）
前記第３高調波放射の２つのビームは、空間的に合成される、項目２３に記載の装置。
（項目２６）
Ｑスイッチ動作のために協働して配列されるポッケルスセルと４分の１波長板とをさらに含む、項目１６に記載の装置。
（項目２７）
固体レーザ装置であって、
２つの共振器ミラーの間に形成される共振器の中に位置する利得要素であって、前記利得要素は、第１の横軸において、直交する第２の横軸よりも長いスラブの形態であり、前記利得要素は、励起放射によってエネルギー付与され、エネルギー付与された共振器は、基本放射の繰り返しパルスビームを生み出し、前記基本放射のビームは、前記第１の横軸における５０を上回るビーム品質係数Ｍ
２
と、前記第２の横軸における１０を上回るビーム品質係数Ｍ
２
とを有する、利得要素と、
第１の非線形結晶であって、前記基本放射のビームは、前記第１の非線形結晶の中へ指向され、前記基本放射のビームの一部が、第２高調波発生によって第２高調波放射のビームに変換され、基本放射の残留ビームを残す、第１の非線形結晶と、
第２の非線形結晶であって、前記第２高調波放射のビームおよび前記基本放射の残留ビームは両方とも、前記第２の非線形結晶の中へ指向され、それによって、和周波数混合によって第３高調波放射のビームを発生させ、残留基本放射および残留第２高調波放射の共に伝搬するビームを残す、第２の非線形結晶と、
を備え、前記第１の横軸および前記第２の横軸における前記第２高調波放射ビームのビーム品質係数Ｍ
２
は、前記基本放射ビームの対応するビーム品質係数Ｍ
２
を上回り、前記第１の横軸および前記第２の横軸における前記第３高調波放射ビームのビーム品質係数Ｍ
２
は、前記第２高調波放射ビームの対応するビーム品質係数Ｍ
２
を上回る、固体レーザ装置。
In one aspect, an optical apparatus for annealing a layer on a substrate according to the present invention comprises a plurality of frequency-converted repetitively pulsed solid-state lasers. Each laser has a wavelength in the ultraviolet region of the electromagnetic spectrum, a cross-section characterized by mutually orthogonal first and second transverse axes, and a beam quality factor M greater than about 50 in the first transverse axis. 2 and a beam quality factor M2 greater than about 20 on the second horizontal axis. The laser pulses in each output beam have pulse energies greater than about 100 millijoules and pulse repetition frequencies greater than about 100 hertz. The optical device further includes a line projector arranged to receive the output beam, form the output beam into a line beam, and project the line beam onto the layer. A line beam has a length and a width on the layer.
The present invention provides, for example, the following.
(Item 1)
An optical apparatus for annealing a layer on a substrate, comprising:
A plurality of frequency-converted repetitively-pulsed solid-state lasers, each of said plurality of frequency-converted repetitively-pulsed solid-state lasers delivering an output beam having a wavelength within the ultraviolet region of the electromagnetic spectrum, each output beam comprising: having a cross-section characterized by mutually orthogonal first and second transverse axes, wherein a beam quality factor M2 in said first transverse axis is greater than about 50, and in said second transverse axis a multiple frequency-converted repetitive pulse solid-state laser having a beam quality factor M2 greater than about 20, the laser pulses having a pulse energy greater than about 100 millijoules, and a pulse repetition frequency greater than about 100 Hertz; ,
A line projector arranged to receive the output beam, form the output beam into a line beam, and project the line beam onto the layer, the line beam having a length and a width on the layer. and a line projector having
An optical device, comprising:
(Item 2)
2. The apparatus of item 1, wherein the beam quality factor M2 on the first horizontal axis is greater than about 200.
(Item 3)
2. Apparatus according to item 1, wherein each output beam contributes to the total length of the line beam.
(Item 4)
Each of the frequency-converted repetitively pulsed solid-state lasers includes a laser cavity having a gain element optically pumped by one or more diode laser arrays; Item 1, wherein the diode laser array is arranged to provide a gain volume within the gain element having a first dimension along the first lateral axis and a second dimension along the second lateral axis. The apparatus described in .
(Item 5)
5. Apparatus according to item 4, wherein the dimension of the first horizontal axis is at least three times the dimension of the second horizontal axis.
(Item 6)
6. Apparatus according to item 5, wherein the laser cavity is formed between a first cavity mirror and a second cavity mirror having optical power only in the second transverse axis.
(Item 7)
The laser cavity produces a fundamental radiation beam having a wavelength in the near-infrared region of the electromagnetic spectrum characteristic of the gain element, the laser cavity comprising, in numerical order, a first optical nonlinear crystal and a second optical delivering the fundamental beam of radiation to a nonlinear crystal, the first optical nonlinear crystal arranged to generate a second harmonic beam of radiation from the fundamental beam of radiation, the second 5. Apparatus according to item 4, arranged to generate said output beam by sum-frequency mixing said second harmonic radiation beam with a residual fundamental radiation beam after generation of a second harmonic radiation beam.
(Item 8)
M2 values of the second harmonic beam of radiation on the first horizontal axis and the second horizontal axis exceed corresponding M2 values of the fundamental beam of radiation ; 8. The apparatus of item 7, wherein the M2 value of the output beam on the horizontal axis of is greater than the corresponding value of the second harmonic radiation beam.
(Item 9)
9. Apparatus according to item 8, wherein the M2 value of the second harmonic radiation beam on the first horizontal axis is at least twice the M2 value of the fundamental radiation beam on the first horizontal axis. .
(Item 10)
9. The apparatus of item 8, wherein the M2 value of the output beam on the first horizontal axis is greater than 1.5 times the M2 value of the second harmonic radiation on the first horizontal axis .
(Item 11)
9. Apparatus according to item 8, wherein the M2 value of the output beam on the first horizontal axis is greater than 1.5 times the M2 value of the residual fundamental radiation on the first horizontal axis .
(Item 12)
8. The apparatus of item 7, wherein the output beam has a wavelength within the range of 340-360 nanometers.
(Item 13)
2. The apparatus of item 1, wherein the laser pulse has a full width half maximum pulse duration greater than about 10 nanoseconds.
(Item 14)
The apparatus of item 1, wherein the output beam is linearly polarized.
(Item 15)
A device according to item 1, wherein the layer is made of silicon.
(Item 16)
A solid-state laser device,
a gain element located in a resonator formed between two resonator mirrors, said gain element being in the form of a slab and energized by excitation radiation, the energized resonator comprising: producing a repetitive pulsed beam of fundamental radiation, said beam of fundamental radiation having mutually orthogonal first and second transverse axes, and a beam quality factor M2 in said first transverse axis of 50 and the beam quality factor M2 on the second horizontal axis is greater than 10;
a first nonlinear crystal, wherein the beam of fundamental radiation is directed into the first nonlinear crystal and a portion of the beam of fundamental radiation is converted into second harmonic radiation by second harmonic generation; a first nonlinear crystal converted into a beam leaving a residual beam of fundamental radiation;
a second nonlinear crystal, wherein both the beam of second harmonic radiation and the residual beam of fundamental radiation are directed into the second nonlinear crystal, whereby by sum frequency mixing the third harmonic generating a beam of wave radiation, leaving a co-propagating beam of residual fundamental radiation and a residual second harmonic radiation, said beam of third harmonic radiation having a beam quality factor M greater than 50 in said first transverse axis; 2 , a beam quality factor M2 on the second horizontal axis greater than 20, and a pulse energy greater than about 100 millijoules; and
A solid-state laser device.
(Item 17)
17. Apparatus according to item 16, wherein the beam quality factor M2 of the beam of third harmonic radiation is greater than about 200 on the first horizontal axis .
(Item 18)
17. The device of item 16, wherein the gain element is a neodymium-doped yttrium aluminum garnet (Nd3 + doped YAG) crystal.
(Item 19)
17. The device of item 16, wherein the first nonlinear crystal is made of LBO.
(Item 20)
17. Apparatus according to item 16, wherein the first nonlinear crystal is arranged for type 1 frequency doubling of the beam of fundamental radiation.
(Item 21)
17. The device of item 16, wherein the second nonlinear crystal is made of LBO.
(Item 22)
17. Apparatus according to item 16, wherein the second nonlinear crystal is arranged for type 1 sum frequency mixing of the beam of second harmonic radiation and the beam of residual fundamental radiation.
(Item 23)
further comprising a third nonlinear crystal, wherein said co-propagating beams of residual fundamental radiation and residual second harmonic radiation are directed into said third nonlinear crystal, thereby generating a third harmonic by sum frequency mixing; 17. Apparatus according to item 16, for generating another beam of radiation.
(Item 24)
24. The apparatus of item 23, wherein the two beams of third harmonic radiation are polarization combined.
(Item 25)
24. The apparatus of item 23, wherein the two beams of third harmonic radiation are spatially combined.
(Item 26)
17. The apparatus of item 16, further comprising a Pockels cell and a quarter-wave plate cooperatively arranged for Q-switching operation.
(Item 27)
A solid-state laser device,
A gain element located in a resonator formed between two resonator mirrors, said gain element being in the form of a slab that is longer in a first transverse axis than in an orthogonal second transverse axis. wherein said gain element is energized by excitation radiation and said energized resonator produces a repetitive pulsed beam of fundamental radiation, said beam of fundamental radiation having a beam quality greater than 50 in said first transverse axis. a gain element having a factor M2 and a beam quality factor M2 greater than 10 on the second horizontal axis ;
a first nonlinear crystal, wherein the beam of fundamental radiation is directed into the first nonlinear crystal and a portion of the beam of fundamental radiation is converted into second harmonic radiation by second harmonic generation; a first nonlinear crystal converted into a beam leaving a residual beam of fundamental radiation;
a second nonlinear crystal, wherein both the beam of second harmonic radiation and the residual beam of fundamental radiation are directed into the second nonlinear crystal, whereby by sum frequency mixing the third harmonic a second nonlinear crystal for generating a beam of wave radiation and leaving a co-propagating beam of residual fundamental radiation and residual second harmonic radiation;
wherein a beam quality factor M2 of said second harmonic radiation beam on said first horizontal axis and said second horizontal axis exceeds a corresponding beam quality factor M2 of said fundamental radiation beam, and said first and a beam quality factor M2 of said third harmonic radiation beam on the horizontal axis of and said second horizontal axis exceeds a corresponding beam quality factor M2 of said second harmonic radiation beam .
Claims (27)
複数の周波数変換される繰り返しパルス固体レーザであって、前記複数の周波数変換される繰り返しパルス固体レーザの各々は、第１の共振器ミラーと第２の共振器ミラーとの間に形成されるレーザ共振器を含み、前記レーザ共振器は、スラブの形態の利得要素を含み、前記利得要素は、前記利得要素内に利得容積を提供するように光学励起によってエネルギー付与され、前記エネルギー付与された共振器は、基本放射ビームを生み出し、各固体レーザは、前記基本放射ビームの一部を、電磁スペクトルの紫外線領域内の波長を有する出力ビームに変換するための少なくとも１つの非線形結晶をさらに含み、各出力ビームは、相互に直交する第１の横軸および第２の横軸によって特徴付けられる断面を有する、複数の周波数変換される繰り返しパルス固体レーザと、
前記出力ビームを受光し、前記出力ビームをラインビームに形成し、前記ラインビームを前記層上に投射するように配列されるラインプロジェクタであって、前記ラインビームは、前記層上に長さと幅とを有する、ラインプロジェクタと
を備え、
前記利得容積の断面寸法、前記第１の共振器ミラーと前記第２の共振器ミラーとの間の共振器長さ、前記第１の共振器ミラーおよび前記第２の共振器ミラーの光パワー、および、前記少なくとも１つの非線形結晶内の伝搬距離は、前記第１の横軸における前記出力ビームのビーム品質係数Ｍ ２ が５０を上回りかつ前記第２の横軸における前記出力ビームのビーム品質係数Ｍ ２ が２０を上回ることを達成するように、選択され、
前記レーザ共振器からの出力結合およびパルス繰り返し周波数は、１００ミリジュールを上回るパルスエネルギーを有する前記出力ビームのレーザパルスを生み出すように、選択され、前記パルス繰り返し周波数は、１００ヘルツを上回る、光学装置。 An optical apparatus for annealing a layer on a substrate, comprising:
A plurality of frequency-converted repetitive-pulse solid -state lasers, each of said plurality of frequency-converted repetitive-pulse solid-state lasers formed between a first cavity mirror and a second cavity mirror a resonator, said laser resonator including a gain element in the form of a slab, said gain element energized by optical pumping to provide a gain volume within said gain element; the device produces a fundamental beam of radiation, each solid-state laser further comprising at least one nonlinear crystal for converting a portion of said fundamental beam of radiation into an output beam having a wavelength within the ultraviolet region of the electromagnetic spectrum; a plurality of frequency-converted repetitively-pulsed solid-state lasers, the output beams of which have cross-sections characterized by mutually orthogonal first and second transverse axes;
A line projector arranged to receive the output beam, form the output beam into a line beam, and project the line beam onto the layer, the line beam having a length and a width on the layer. and a line projector having
a cross-sectional dimension of the gain volume, a cavity length between the first cavity mirror and the second cavity mirror, an optical power of the first cavity mirror and the second cavity mirror; and the propagation distance in said at least one nonlinear crystal is such that a beam quality factor M2 of said output beam on said first horizontal axis is greater than 50 and a beam quality factor M of said output beam on said second horizontal axis is selected to achieve 2 greater than 20,
An optical apparatus wherein output coupling from said laser cavity and pulse repetition frequency are selected to produce laser pulses of said output beam having pulse energies greater than 100 millijoules, said pulse repetition frequency greater than 100 hertz. .
２つの共振器ミラーの間に形成される共振器の中に位置する利得要素であって、前記利得要素は、スラブの形態であり、前記利得要素内に利得容積を提供するように励起放射によってエネルギー付与され、前記エネルギー付与された共振器は、基本放射の繰り返しパルスビームを生み出し、前記基本放射のビームは、相互に直交する第１の横軸および第２の横軸を有し、（ｉ）前記利得容積の断面寸法、（ｉｉ）前記２つの共振器ミラーの間の共振器長さ、および、（ｉｉｉ）前記２つの共振器ミラーの光パワーは、前記第１の横軸におけるビーム品質係数Ｍ２ が５０を上回りかつ前記第２の横軸におけるビーム品質係数Ｍ２ が１０を上回ることを達成するように、選択される、利得要素と、
第１の非線形結晶であって、前記基本放射のビームは、前記第１の非線形結晶の中へ指向され、前記基本放射のビームの一部が、第２高調波発生によって第２高調波放射のビームに変換され、基本放射の残留ビームを残す、第１の非線形結晶と、
第２の非線形結晶であって、前記第２高調波放射のビームおよび前記基本放射の残留ビームは両方とも、前記第２の非線形結晶の中へ指向され、それによって、和周波数混合によって第３高調波放射のビームを発生させ、残留基本放射および残留第２高調波放射の共に伝搬するビームを残し、前記第１の非線形結晶内の伝搬距離および前記第２の非線形結晶内の別の伝搬距離は、前記第１の横軸における５０を上回るビーム品質係数Ｍ２ と前記第２の横軸における２０を上回るビーム品質係数Ｍ２とを有する前記第３高調波放射のビームを生み出すように、選択される、第２の非線形結晶と
を備え、
前記レーザ共振器からの出力結合およびパルス繰り返し周波数は、１００ミリジュールを上回る前記第３高調波放射のビームのパルスエネルギーを生み出すように、選択される、固体レーザ装置。 A solid-state laser device,
A gain element located within a resonator formed between two resonator mirrors, said gain element being in the form of a slab and being pumped by pump radiation to provide a gain volume within said gain element. Energized, said energized cavity produces a repetitive pulsed beam of fundamental radiation, said beam of fundamental radiation having mutually orthogonal first and second transverse axes, (i ) the cross-sectional dimension of the gain volume, (ii) the cavity length between the two cavity mirrors, and (iii) the optical power of the two cavity mirrors are the beam quality in the first transverse axis. a gain element selected to achieve a factor M2 greater than 50 and a beam quality factor M2 on the second horizontal axis greater than 10;
a first nonlinear crystal, wherein the beam of fundamental radiation is directed into the first nonlinear crystal and a portion of the beam of fundamental radiation is converted into second harmonic radiation by second harmonic generation; a first nonlinear crystal converted into a beam leaving a residual beam of fundamental radiation;
a second nonlinear crystal, wherein both the beam of second harmonic radiation and the residual beam of fundamental radiation are directed into the second nonlinear crystal, whereby by sum frequency mixing the third harmonic generating a beam of wave radiation, leaving a co-propagating beam of residual fundamental radiation and residual second harmonic radiation , a propagation distance within said first nonlinear crystal and another propagation distance within said second nonlinear crystal being , is selected to produce a beam of said third harmonic radiation having a beam quality factor M2 above 50 on said first horizontal axis and a beam quality factor M2 above 20 on said second horizontal axis. a second nonlinear crystal and
with
A solid-state laser device wherein an outcoupling from said laser cavity and a pulse repetition frequency are selected to produce a pulse energy of said beam of third harmonic radiation in excess of 100 millijoules.
２つの共振器ミラーの間に形成される共振器の中に位置する利得要素であって、前記利得要素は、第１の横軸において、直交する第２の横軸よりも長いスラブの形態であり、前記利得要素は、前記利得要素内に利得容積を提供するように励起放射によってエネルギー付与され、前記エネルギー付与された共振器は、基本放射の繰り返しパルスビームを生み出し、（ｉ）前記利得容積の断面寸法、（ｉｉ）前記２つの共振器ミラーの間の共振器長さ、および、（ｉｉｉ）前記２つの共振器ミラーの光パワーは、前記第１の横軸における５０を上回るビーム品質係数Ｍ２ と前記第２の横軸における１０を上回るビーム品質係数Ｍ２とを有する前記基本放射のビームを生み出すように、選択される、利得要素と、
第１の非線形結晶であって、前記基本放射のビームは、前記第１の非線形結晶の中へ指向され、前記基本放射のビームの一部が、第２高調波発生によって第２高調波放射のビームに変換され、基本放射の残留ビームを残す、第１の非線形結晶と、
第２の非線形結晶であって、前記第２高調波放射のビームおよび前記基本放射の残留ビームは両方とも、前記第２の非線形結晶の中へ指向され、それによって、和周波数混合によって第３高調波放射のビームを発生させ、残留基本放射および残留第２高調波放射の共に伝搬するビームを残す、第２の非線形結晶と
を備え、
前記第１の非線形結晶内の伝搬距離は、前記基本放射ビームの対応するビーム品質係数Ｍ ２ を上回る前記第１の横軸および前記第２の横軸における前記第２高調波放射ビームのビーム品質係数Ｍ２ を達成するように、選択され、前記第２の非線形結晶内の別の伝搬距離は、前記第２高調波放射ビームの対応するビーム品質係数Ｍ ２ を上回る前記第１の横軸および前記第２の横軸における前記第３高調波放射ビームのビーム品質係数Ｍ２ を達成するように、選択される、固体レーザ装置。
A solid-state laser device,
A gain element located in a resonator formed between two resonator mirrors, said gain element being in the form of a slab that is longer in a first transverse axis than in an orthogonal second transverse axis. wherein said gain element is energized by pump radiation to provide a gain volume within said gain element , said energized cavity producing a repetitive pulsed beam of fundamental radiation; (i) said gain volume; , (ii) a cavity length between the two cavity mirrors, and (iii) the optical power of the two cavity mirrors have a beam quality factor greater than 50 in the first transverse axis. a gain element selected to produce a beam of fundamental radiation having M2 and a beam quality factor M2 on the second horizontal axis greater than 10;
a first nonlinear crystal, wherein the beam of fundamental radiation is directed into the first nonlinear crystal and a portion of the beam of fundamental radiation is converted into second harmonic radiation by second harmonic generation; a first nonlinear crystal converted into a beam leaving a residual beam of fundamental radiation;
a second nonlinear crystal, wherein both the beam of second harmonic radiation and the residual beam of fundamental radiation are directed into the second nonlinear crystal, whereby by sum frequency mixing the third harmonic a second nonlinear crystal generating a beam of wave radiation and leaving a co-propagating beam of residual fundamental and residual second harmonic radiation ;
with
A propagation distance in said first nonlinear crystal is a beam quality of said second harmonic radiation beam on said first and second horizontal axes that exceeds a corresponding beam quality factor M2 of said fundamental radiation beam. wherein another propagation distance within said second nonlinear crystal is selected to achieve a factor M2 above said first abscissa and a corresponding beam quality factor M2 of said second harmonic radiation beam; A solid-state laser device selected to achieve a beam quality factor M2 of said beam of third harmonic radiation in said second horizontal axis.
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