JPWO2020150017A5 - - Google Patents

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JPWO2020150017A5
JPWO2020150017A5 JP2021540490A JP2021540490A JPWO2020150017A5 JP WO2020150017 A5 JPWO2020150017 A5 JP WO2020150017A5 JP 2021540490 A JP2021540490 A JP 2021540490A JP 2021540490 A JP2021540490 A JP 2021540490A JP WO2020150017 A5 JPWO2020150017 A5 JP WO2020150017A5
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取り外し可能な記憶装置であって、当該取り外し可能な記憶装置は、
データを記憶するように構成されるメモリと、
該メモリと通信するプロセッサと、を含み、
該プロセッサは、
当該取り外し可能な記憶装置の動作の初期化に応答して、当該取り外し可能な記憶装置の周りの環境を熱的に強化した環境又は熱的に強化していない環境として識別し、
前記環境に基づいて、当該取り外し可能な記憶装置の熱制御ループアルゴリズムを調整し、前記熱的に強化した環境を識別することに応答して、前記プロセッサによる処理作業の単位当たりの予想温度上昇を減らし、及び
前記熱制御ループアルゴリズムに応答して、前記プロセッサの処理動作を制御する、ように実行可能である、
取り外し可能な記憶装置。
A removable storage device, the removable storage device comprising:
a memory configured to store data;
a processor in communication with the memory;
The processor is
responsive to initializing operation of the removable storage device, identifying an environment around the removable storage device as a thermally enhanced environment or a non-thermally enhanced environment;
Adjusting a thermal control loop algorithm of the removable storage device based on the environment to provide an expected temperature rise per unit of processing work by the processor in response to identifying the thermally enhanced environment. reduce and
operable to control processing operations of the processor in response to the thermal control loop algorithm;
Removable storage device.
前記熱制御ループアルゴリズムを調整するために、前記プロセッサは、
前記熱的に強化した環境の識別に応答して、前記熱制御ループアルゴリズムで使用するための1つ又は複数の制御ループパラメータの第1のセットを選択し、及び
前記熱的に強化していない環境の識別に応答して、前記熱制御ループアルゴリズムの1つ又は複数の制御ループパラメータの第2のセットを選択する、ように構成され、
前記1つ又は複数の制御ループパラメータの前記第1のセットを使用する前記熱制御ループアルゴリズムは、前記1つ又は複数の制御ループパラメータの前記第2のセットを使用する前記熱制御ループアルゴリズムと比較して、前記プロセッサによる処理作業の単位当たりの予測温度上昇を低くする、請求項1に記載の取り外し可能な記憶装置。
To adjust the thermal control loop algorithm, the processor comprises:
selecting a first set of one or more control loop parameters for use in the thermal control loop algorithm in response to identifying the thermally enhanced environment; and the non-thermally enhanced environment. responsive to identifying an environment, selecting a second set of one or more control loop parameters for the thermal control loop algorithm;
The thermal control loop algorithm using the first set of the one or more control loop parameters is compared to the thermal control loop algorithm using the second set of the one or more control loop parameters. 2. The removable storage device of claim 1, wherein a lower expected temperature rise per unit of processing work is performed by said processor.
前記熱制御ループアルゴリズムは第1の熱制御ループアルゴリズムであり、前記熱制御ループアルゴリズムを調整するために、前記プロセッサは、
前記熱的に強化した環境の識別に応答して、第の熱制御ループアルゴリズムを選択し、及び
前記熱的に強化していない環境の識別に応答して、第の熱制御ループアルゴリズムを選択する、ように構成され、
前記第の熱制御ループアルゴリズムは、前記第の熱制御ループアルゴリズムと比較して、処理作業の単位当たりの予測温度上昇を低くする、請求項1に記載の取り外し可能な記憶装置。
The thermal control loop algorithm is a first thermal control loop algorithm, and to adjust the thermal control loop algorithm, the processor comprises:
selecting a second thermal control loop algorithm in response to identifying the thermally enhanced environment; and selecting a third thermal control loop algorithm in response to identifying the non-thermally enhanced environment. select, is configured to
2. The removable storage device of claim 1, wherein the second thermal control loop algorithm provides a lower predicted temperature rise per unit of process work as compared to the third thermal control loop algorithm.
前記プロセッサの処理動作を制御するために、前記プロセッサは、
プロセッサ作業要求を受信し、
記熱制御ループアルゴリズムに従って予想温度上昇を決定し、
現在の温度を特定し、
該現在の温度と前記予想温度上昇との合計を熱しきい値と比較し、
前記合計が前記熱しきい値以下であることに応答して、前記プロセッサ作業要求を受け入れ、及び
前記合計が前記熱しきい値よりも大きいことに応答して、前記プロセッサ作業要求を遅らせる、ようにさらに構成される、請求項1に記載の取り外し可能な記憶装置。
To control processing operations of the processor, the processor:
receive processor work requests;
determining an expected temperature rise according to the thermal control loop algorithm;
identify the current temperature,
comparing the sum of the current temperature and the expected temperature rise to a thermal threshold;
accepting the processor work request in response to the sum being less than or equal to the thermal threshold; and delaying the processor work request in response to the sum being greater than the thermal threshold. The removable storage device of claim 1, further configured to:
前記メモリは不揮発性メモリを含み、当該取り外し可能な記憶装置は、
前記プロセッサの現在の温度を検出するように構成されるプロセッサ温度センサ、又は前記不揮発性メモリの現在の温度を検出するように構成されるメモリ温度センサの少なくとも一方をさらに含み、
前記予想温度上昇を決定するために、前記プロセッサは、プロセッサの予想温度上昇又は不揮発性メモリの予想温度上昇の少なくとも一方を決定するようにさらに構成され、
前記現在の温度を特定するために、前記プロセッサは、前記プロセッサの前記現在の温度又は前記不揮発性メモリの前記現在の温度の少なくとも一方を特定するようにさらに構成され、
前記熱しきい値には、プロセッサ熱しきい値又はメモリ熱しきい値の少なくとも一方が含まれ、
前記合計を前記熱しきい値と比較するために、前記プロセッサは、前記プロセッサの前記現在の温度と前記プロセッサの予想温度上昇との第1の合計を前記プロセッサ熱しきい値と比較すること、又は前記不揮発性メモリの前記現在の温度と前記不揮発性メモリの予想上昇温度との第2の合計を前記メモリ熱しきい値と比較することの少なくとも一方を行うようにさらに構成され、
前記プロセッサは、前記第1の合計が前記プロセッサ熱しきい値以下であること、又は前記第2の合計が前記メモリ熱しきい値以下であることの少なくとも一方に応答して、前記プロセッサ作業要求を受け入れるようにさらに構成され、
前記プロセッサは、前記第1の合計が前記プロセッサ熱しきい値よりも大きいこと、又は前記第2の合計が前記メモリ熱しきい値よりも大きいことの少なくとも一方に応答して、前記プロセッサ作業要求を遅らさせる、ようにさらに構成される。請求項4に記載の取り外し可能な記憶装置。
The memory comprises non-volatile memory, and the removable storage device comprises:
further comprising at least one of a processor temperature sensor configured to detect a current temperature of said processor or a memory temperature sensor configured to detect a current temperature of said non-volatile memory;
to determine the expected temperature rise, the processor is further configured to determine at least one of an expected temperature rise of a processor or an expected temperature rise of a non-volatile memory;
to determine the current temperature, the processor is further configured to determine at least one of the current temperature of the processor or the current temperature of the non-volatile memory;
the thermal thresholds include at least one of a processor thermal threshold or a memory thermal threshold;
the processor comparing a first sum of the current temperature of the processor and an expected temperature rise of the processor to the processor thermal threshold to compare the sum to the thermal threshold; or further configured to perform at least one of comparing a second sum of the current temperature of the non-volatile memory and the expected elevated temperature of the non-volatile memory to the memory thermal threshold;
The processor accepts the processor work request in response to at least one of the first sum being less than or equal to the processor thermal threshold or the second sum being less than or equal to the memory thermal threshold. is further configured as
The processor delays the processor work request in response to at least one of the first sum being greater than the processor thermal threshold or the second sum being greater than the memory thermal threshold. It is further configured to allow 5. The removable storage device of claim 4.
前記プロセッサは、
前記初期化後に、前記熱的に強化した環境の変化を検出し、
前記熱的に強化した環境の前記変化に基づいて、当該取り外し可能な記憶装置の前記熱制御ループアルゴリズムを更新することによって、更新した熱制御ループを生成し、及び
該更新した熱制御ループアルゴリズムに応答して、前記プロセッサの処理動作を制御する、ようにさらに構成される、請求項1に記載の取り外し可能な記憶装置。
The processor
detecting a change in the thermally enhanced environment after the initialization;
generating an updated thermal control loop by updating the thermal control loop algorithm of the removable storage device based on the change in the thermally enhanced environment; and the updated thermal control loop algorithm. 2. The removable storage device of claim 1, further configured to control processing operations of the processor in response to.
前記熱的に強化した環境の変化を検出するために、前記プロセッサは、
前記熱的に強化した環境においてオンになっている冷却装置、
前記熱的に強化した環境においてオフになっている冷却装置、又は
前記熱的に強化した環境の熱放散率の変化、の少なくとも1つを検出する、ようにさらに構成される、請求項に記載の取り外し可能な記憶装置。
To detect changes in the thermally enhanced environment, the processor comprises:
a cooling device turned on in said thermally enhanced environment;
7. The apparatus of claim 6 further configured to detect at least one of a cooling device being turned off in the thermally enhanced environment or a change in heat dissipation rate of the thermally enhanced environment. Removable storage device as described.
前記プロセッサと通信する少なくとも1つの入力/出力(I/O)ピンをさらに含み、該入力/出力(I/O)ピンは、前記初期化中に、前記熱的に強化した環境又は前記熱的に強化していない環境のいずれかを識別する環境識別信号を受信するように構成される、請求項1に記載の取り外し可能な記憶装置。 further comprising at least one input/output (I/O) pin in communication with the processor, the input/output (I/O) pin being responsive to the thermally enhanced environment or the thermal interface during the initialization; 2. The removable storage device of claim 1, configured to receive an environment identification signal that identifies any of the unenhanced environments. 前記メモリ及び前記プロセッサが取り付けられるハウジングであって、外面を有するハウジングと、
該ハウジングの前記外面の一部を規定するか、又は前記外面に接続される熱伝導要素であって、前記ハウジング内から少なくともいくらかの熱を放散するように構成される熱伝導要素と、をさらに含む、請求項1に記載の取り外し可能な記憶装置。
a housing in which the memory and the processor are mounted, the housing having an outer surface;
a heat-conducting element defining a portion of or connected to the exterior surface of the housing, the heat-conducting element configured to dissipate at least some heat from within the housing. 2. The removable storage device of claim 1, comprising:
前記プロセッサと通信し、且つ前記熱伝導要素に接続する電気経路を有する少なくとも1つの入力/出力(I/O)ピンをさらに含み、該I/Oピンは、前記初期化中に、前記熱的に強化した環境又は前記熱的に強化していない環境のいずれかを識別する環境識別信号を前記電気経路を介して受信するように構成される、請求項9に記載の取り外し可能な記憶装置。 further comprising at least one input/output (I/O) pin having an electrical path in communication with the processor and connecting to the thermally conductive element, the I/O pin being responsive to the thermal interface during the initialization; 10. The removable storage device of claim 9, configured to receive an environment identification signal over the electrical path that identifies either the thermally enhanced environment or the non-thermally enhanced environment. 前記熱伝導要素は、前記取り外し可能な記憶装置がホスト装置に対して第2の位置に移動することに応答して、前記ホスト装置の熱インターフェイス部材の接触領域と整列する、前記ハウジング上の第1の位置を有しており、前記第2の位置には挿入位置が含まれる、請求項9に記載の取り外し可能な記憶装置。 The thermally conductive element is aligned with a contact area of a thermal interface member of the host device in response to movement of the removable storage device to a second position relative to the host device. 10. The removable storage device of claim 9, having one position, said second position including an insertion position. 前記プロセッサは、当該取り外し可能な記憶装置がホスト装置に接続されているかどうかを判定することによって前記初期化を検出するようにさらに構成され、
前記ホスト装置は、当該取り外し可能な記憶装置の周りの前記環境を規定する構造を含み、前記ホスト装置に接続されていると判定された場合は、当該取り外し可能な記憶装置の前記動作が初期化されていることを示す、請求項1に記載の取り外し可能な記憶装置。
the processor is further configured to detect the initialization by determining whether the removable storage device is connected to a host device;
The host device includes a structure that defines the environment around the removable storage device, and initializes the operation of the removable storage device when determined to be connected to the host device. 2. The removable storage device of claim 1, wherein the removable storage device indicates that
取り外し可能な記憶装置の動作方法であって、当該動作方法は、
前記取り外し可能な記憶装置の動作の初期化に応答して、前記取り外し可能な記憶装置の周りの環境を熱的に強化した環境又は熱的に強化していない環境として識別するステップと、
前記環境に基づいて、前記取り外し可能な記憶装置の熱制御ループアルゴリズムを調整するステップと、
前記熱制御ループアルゴリズムに応答して、プロセッサの処理動作を制御するステップと、を含
該制御するステップは、
前記熱制御ループアルゴリズムに従って予想温度上昇を決定するステップと、
前記予想温度上昇及び現在の温度に基づいてプロセッサ作業要求を受け入れる又は遅らせるステップと、を含む、
動作方法。
A method of operating a removable storage device, the method comprising:
identifying an environment around the removable storage device as a thermally enhanced environment or a non-thermally enhanced environment in response to initializing operation of the removable storage device;
adjusting a thermal control loop algorithm of the removable storage device based on the environment;
controlling processing operations of a processor in response to the thermal control loop algorithm;
The controlling step includes:
determining an expected temperature rise according to the thermal control loop algorithm;
accepting or delaying a processor work request based on said expected temperature rise and current temperature;
How it works.
前記熱制御ループアルゴリズムを調整するステップは、
前記熱的に強化した環境の識別に応答して、前記熱制御ループアルゴリズムで使用するための1つ又は複数の制御ループパラメータの第1のセットを選択するステップと、
前記熱的に強化していない環境の識別に応答して、前記熱制御ループアルゴリズムの1つ又は複数の制御ループパラメータの第2のセットを選択するステップと、を含み、
前記1つ又は複数の制御ループパラメータの前記第1のセットを使用する前記熱制御ループアルゴリズムは、前記1つ又は複数の制御ループパラメータの前記第2のセットを使用する前記熱制御ループアルゴリズムと比較して、前記プロセッサによる処理作業の単位当たりの予測温度上昇を低くする、請求項13に記載の動作方法。
Adjusting the thermal control loop algorithm comprises:
selecting a first set of one or more control loop parameters for use in the thermal control loop algorithm in response to identifying the thermally enhanced environment;
selecting a second set of one or more control loop parameters for the thermal control loop algorithm in response to identifying the non-thermally enhanced environment;
The thermal control loop algorithm using the first set of the one or more control loop parameters is compared to the thermal control loop algorithm using the second set of the one or more control loop parameters. 14. The method of operation of claim 13, further comprising reducing the expected temperature rise per unit of processing work by said processor.
前記熱制御ループアルゴリズムは第1の熱制御ループアルゴリズムであり、前記熱制御ループアルゴリズムを調整するステップは、
前記熱的に強化した環境の識別に応答して、第の熱制御ループアルゴリズムを選択するステップと、
前記熱的に強化していない環境の識別に応答して、第の熱制御ループアルゴリズムを選択するステップと、を含み、
前記第の熱制御ループアルゴリズムは、前記第の熱制御ループアルゴリズムと比較して、処理作業の単位当たりの予測温度上昇を低くする、請求項13に記載の動作方法。
The thermal control loop algorithm is a first thermal control loop algorithm, and adjusting the thermal control loop algorithm comprises:
selecting a second thermal control loop algorithm in response to identifying the thermally enhanced environment;
selecting a third thermal control loop algorithm in response to identifying the non-thermally enhanced environment;
14. The method of operation of claim 13, wherein said second thermal control loop algorithm provides a lower predicted temperature rise per unit of process work as compared to said third thermal control loop algorithm.
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