JPWO2020090164A1 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
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- JPWO2020090164A1 JPWO2020090164A1 JP2020554764A JP2020554764A JPWO2020090164A1 JP WO2020090164 A1 JPWO2020090164 A1 JP WO2020090164A1 JP 2020554764 A JP2020554764 A JP 2020554764A JP 2020554764 A JP2020554764 A JP 2020554764A JP WO2020090164 A1 JPWO2020090164 A1 JP WO2020090164A1
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- 238000012545 processing Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000001681 protective effect Effects 0.000 claims abstract description 44
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000010953 base metal Substances 0.000 claims abstract description 7
- 238000009489 vacuum treatment Methods 0.000 claims abstract description 7
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 11
- 238000004381 surface treatment Methods 0.000 abstract description 6
- 230000002411 adverse Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 38
- 239000007789 gas Substances 0.000 description 33
- 238000004544 sputter deposition Methods 0.000 description 25
- 239000002245 particle Substances 0.000 description 21
- 239000010409 thin film Substances 0.000 description 16
- 239000003507 refrigerant Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000012212 insulator Substances 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000010943 off-gassing Methods 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000007751 thermal spraying Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 235000013311 vegetables Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000000181 anti-adherent effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
ステージ4が基台41とこの基台上に設置されて被処理基板Swの加熱を可能とするホットプレート43とを有し、所定の隙間を存してこのホットプレートを囲繞する金属製のプラテンリング7と防着板8とを更に備える。ホットプレートに対向するプラテンリングの表面部分は、その母材金属に表面処理を施すことで放射率を低減させた低放射率層73で構成される。
Description
Claims (5)
- 真空雰囲気の形成が可能な真空チャンバを有し、真空チャンバ内に被処理基板が設置されるステージを設けた真空処理装置であって、
ステージが基台とこの基台上に設置されて被処理基板の加熱を可能とするホットプレートとを有し、所定の隙間を存してこのホットプレートを囲繞する金属製のプラテンリングと防着板とを更に備えるものにおいて、
ホットプレートに対向するプラテンリングの表面部分は、その母材金属に表面処理を施すことで放射率を低減させた低放射率層で構成されることを特徴とする真空処理装置。 - 請求項1記載の真空処理装置であって、前記防着板が前記プラテンリングに隙間を存して対向する部分を有するものにおいて、
前記防着板に対向する前記プラテンリングの表面部分は、低放射率層より高い放射率を持つ高放射率層で構成されることを特徴とする真空処理装置。 - 前記プラテンリングの表面部分に対向する前記防着板の部分表面は、前記プラテンリングの低放射率層と同等の放射率を持つことを特徴とする請求項2記載の真空処理装置。
- 前記低放射率層の放射率は、0.3以下であることを特徴とする請求項1〜請求項3の何れか1項に記載の真空処理装置。
- 前記高放射率層の放射率は、0.5以上であることを特徴とする請求項2〜請求項4の何れか1項に記載の真空処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2018204377 | 2018-10-30 | ||
JP2018204377 | 2018-10-30 | ||
PCT/JP2019/028821 WO2020090164A1 (ja) | 2018-10-30 | 2019-07-23 | 真空処理装置 |
Publications (2)
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JPWO2020090164A1 true JPWO2020090164A1 (ja) | 2021-09-02 |
JP7078745B2 JP7078745B2 (ja) | 2022-05-31 |
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Country Status (6)
Country | Link |
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US (1) | US11239063B2 (ja) |
JP (1) | JP7078745B2 (ja) |
KR (1) | KR102565805B1 (ja) |
CN (1) | CN112789366B (ja) |
TW (1) | TWI739138B (ja) |
WO (1) | WO2020090164A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US11781212B2 (en) * | 2021-04-07 | 2023-10-10 | Applied Material, Inc. | Overlap susceptor and preheat ring |
FR3127762B1 (fr) * | 2021-10-05 | 2023-10-13 | Safran Electronics & Defense | Dispositif de chauffage d’un substrat pour dépôt sous vide |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0456126A (ja) * | 1990-06-21 | 1992-02-24 | Kokusai Electric Co Ltd | 半導体製造装置 |
JPH07194965A (ja) * | 1993-12-28 | 1995-08-01 | Kanegafuchi Chem Ind Co Ltd | 成膜方法及び成膜装置 |
JPH0892739A (ja) * | 1994-04-29 | 1996-04-09 | Applied Komatsu Technol Kk | 真空チャンバ用シ−ルドの構成 |
JPH11140650A (ja) * | 1997-11-10 | 1999-05-25 | Toshiba Ceramics Co Ltd | 回転式気相薄膜成長装置 |
JP2001192824A (ja) * | 1999-10-29 | 2001-07-17 | Toshiba Corp | スパッタ装置および成膜方法 |
JP2005158270A (ja) * | 2003-11-20 | 2005-06-16 | Sumitomo Electric Ind Ltd | 被加熱物載置用ヒータ部材及び加熱処理装置 |
JP2015000994A (ja) * | 2013-06-13 | 2015-01-05 | 株式会社アルバック | 真空処理装置 |
JP2018095918A (ja) * | 2016-12-13 | 2018-06-21 | 住友精密工業株式会社 | 圧電体結晶膜の成膜方法および圧電体結晶膜成膜用トレイ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3634029B2 (ja) * | 1995-10-04 | 2005-03-30 | 株式会社アルバック | 真空成膜装置に於ける温度制御方法 |
KR101573665B1 (ko) * | 2010-10-06 | 2015-12-01 | 가부시키가이샤 알박 | 유전체 성막 장치 및 유전체 성막 방법 |
US9376752B2 (en) * | 2012-04-06 | 2016-06-28 | Applied Materials, Inc. | Edge ring for a deposition chamber |
JP6007070B2 (ja) | 2012-11-06 | 2016-10-12 | 株式会社アルバック | スパッタリング方法及びスパッタリング装置 |
CN106702351B (zh) * | 2015-11-17 | 2020-01-07 | 中微半导体设备(上海)股份有限公司 | 带遮挡板的限流环装置与化学气相沉积设备及其调节方法 |
US10435784B2 (en) * | 2016-08-10 | 2019-10-08 | Applied Materials, Inc. | Thermally optimized rings |
KR102474786B1 (ko) * | 2016-11-19 | 2022-12-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 플로팅 쉐도우 링을 가진 프로세스 키트 |
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2019
- 2019-07-23 JP JP2020554764A patent/JP7078745B2/ja active Active
- 2019-07-23 US US16/973,291 patent/US11239063B2/en active Active
- 2019-07-23 CN CN201980064174.5A patent/CN112789366B/zh active Active
- 2019-07-23 WO PCT/JP2019/028821 patent/WO2020090164A1/ja active Application Filing
- 2019-07-23 KR KR1020217015983A patent/KR102565805B1/ko active IP Right Grant
- 2019-07-31 TW TW108127122A patent/TWI739138B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0456126A (ja) * | 1990-06-21 | 1992-02-24 | Kokusai Electric Co Ltd | 半導体製造装置 |
JPH07194965A (ja) * | 1993-12-28 | 1995-08-01 | Kanegafuchi Chem Ind Co Ltd | 成膜方法及び成膜装置 |
JPH0892739A (ja) * | 1994-04-29 | 1996-04-09 | Applied Komatsu Technol Kk | 真空チャンバ用シ−ルドの構成 |
JPH11140650A (ja) * | 1997-11-10 | 1999-05-25 | Toshiba Ceramics Co Ltd | 回転式気相薄膜成長装置 |
JP2001192824A (ja) * | 1999-10-29 | 2001-07-17 | Toshiba Corp | スパッタ装置および成膜方法 |
JP2005158270A (ja) * | 2003-11-20 | 2005-06-16 | Sumitomo Electric Ind Ltd | 被加熱物載置用ヒータ部材及び加熱処理装置 |
JP2015000994A (ja) * | 2013-06-13 | 2015-01-05 | 株式会社アルバック | 真空処理装置 |
JP2018095918A (ja) * | 2016-12-13 | 2018-06-21 | 住友精密工業株式会社 | 圧電体結晶膜の成膜方法および圧電体結晶膜成膜用トレイ |
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Publication number | Publication date |
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US11239063B2 (en) | 2022-02-01 |
CN112789366B (zh) | 2023-03-14 |
JP7078745B2 (ja) | 2022-05-31 |
US20210249237A1 (en) | 2021-08-12 |
TW202017060A (zh) | 2020-05-01 |
CN112789366A (zh) | 2021-05-11 |
KR20210080530A (ko) | 2021-06-30 |
WO2020090164A1 (ja) | 2020-05-07 |
TWI739138B (zh) | 2021-09-11 |
KR102565805B1 (ko) | 2023-08-10 |
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