JPWO2020027919A5 - - Google Patents
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- JPWO2020027919A5 JPWO2020027919A5 JP2021505186A JP2021505186A JPWO2020027919A5 JP WO2020027919 A5 JPWO2020027919 A5 JP WO2020027919A5 JP 2021505186 A JP2021505186 A JP 2021505186A JP 2021505186 A JP2021505186 A JP 2021505186A JP WO2020027919 A5 JPWO2020027919 A5 JP WO2020027919A5
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- vertical
- electrode
- flow path
- chamber base
- baffle plate
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- 230000002093 peripheral effect Effects 0.000 claims 6
- 230000005284 excitation Effects 0.000 claims 3
- 238000000034 method Methods 0.000 claims 1
Claims (20)
処理ガスを受容する処理空間を部分的に画定するチャンバであって、プラズマを用いた前記ワークの処理中に真空下にあるチャンバと、
前記処理空間の下側端を画定するベース組立体であって、周縁を有し、ワークを受容するように構成されるワークホルダーと、外周縁を有するバッフルプレートと、側壁を有して前記バッフルプレートに結合している電極と、前記電極の前記側壁の外面を囲むチャンバベースとを備え、前記バッフルプレートの前記外周縁の大部分は前記電極の前記側壁の内側表面に近接してはいるが直接は接触しないベース組立体と、
前記処理ガスを前記処理空間に導入する、前記チャンバの中の処理ガス供給ポートと、
前記ワークを処理するために前記処理ガスから前記処理空間内でプラズマを提供するように動作可能なプラズマ励起源であって、プラズマを用いた前記ワークの処理中に前記処理空間を排気するために前記バッフルプレートの前記外周縁の前記大部分と前記電極の前記側壁の前記内側表面ととはギャップを画定するように配置されているプラズマ励起源と、
を備える装置。 A device that processes workpieces using plasma.
A chamber that partially delimits the processing space that receives the processing gas, and a chamber that is under vacuum during the processing of the workpiece using plasma.
A base assembly defining the lower end of the processing space, the workholder having a peripheral edge and configured to receive the work, a baffle plate having an outer peripheral edge, and a side wall. It comprises an electrode coupled to the baffle plate and a chamber base surrounding the outer surface of the sidewall of the electrode, with most of the outer peripheral edge of the baffle plate in close proximity to the inner surface of the sidewall of the electrode. With the base assembly, which does not come into direct contact with
A processing gas supply port in the chamber, which introduces the processing gas into the processing space,
A plasma excitation source capable of operating to provide plasma in the processing space from the processing gas for processing the work, for exhausting the processing space during processing of the work using plasma. A plasma excitation source arranged so as to demarcate a gap between the majority of the outer peripheral edge of the baffle plate and the inner surface of the sidewall of the electrode .
A device equipped with.
前記ベース組立体は流路を画定し、前記流路を介して、前記処理空間が前記ベース組立体から排気される装置。 The device according to claim 1.
A device in which the base assembly defines a flow path, and the processing space is exhausted from the base assembly through the flow path.
前記流路は、第2の鉛直部分から鉛直にオフセットする第1の鉛直部分を備える装置。 The device according to claim 2.
The flow path is a device including a first vertical portion that is vertically offset from the second vertical portion.
前記第1の鉛直部分は第1の鉛直通路によって画定され、前記第2の鉛直部分は第2の鉛直通路によって画定され、前記第2の鉛直通路は前記第1の鉛直通路から鉛直にオフセットする装置。 The device according to claim 3.
The first vertical portion is defined by a first vertical passage, the second vertical portion is defined by a second vertical passage, and the second vertical passage is vertically offset from the first vertical passage. Device.
前記プラズマ励起源は前記電極を含み、前記電極は前記ベース組立体内で前記チャンバベースと前記バッフルプレートとの間に鉛直に位置決めされ、前記第1の鉛直通路は前記電極によって画定され、前記第2の鉛直通路は前記チャンバベースによって画定される装置。 The device according to claim 4.
The plasma excitation source includes the electrode, the electrode is positioned vertically between the chamber base and the baffle plate in the base assembly, the first vertical passage is defined by the electrode, and the second. The vertical passage of the device is defined by the chamber base.
前記バッフルプレートと前記電極とは結合して、前記バッフルプレートと前記電極との間に内部空間を画定し、前記バッフルプレートと前記電極との間の前記内部空間は、前記処理空間の排気の直後に、前記流路の一部分を画定する装置。 The device according to claim 5.
The baffle plate and the electrode are coupled to define an internal space between the baffle plate and the electrode, and the internal space between the baffle plate and the electrode is immediately after the exhaust of the processing space. In addition, a device for defining a part of the flow path.
前記バッフルプレートと前記電極との間で前記内部空間によって画定される前記流路の前記一部分は、前記電極によって画定される前記第1の鉛直通路に先立って第1の横部分を備える装置。 The device according to claim 6.
A device comprising a first lateral portion of the flow path defined by the internal space between the baffle plate and the electrode prior to the first vertical passage defined by the electrode.
前記電極は前記チャンバベースに結合し、前記第1の鉛直通路は前記チャンバベースまで通っている装置。 The device according to claim 7.
A device in which the electrodes are coupled to the chamber base and the first vertical passage runs to the chamber base.
前記チャンバベースは前記第1の鉛直通路の後で前記流路の第2の横部分を画定するように構成される円形チャネルを画定する装置。 The device according to claim 8.
The chamber base is a device that defines a circular channel configured to define a second lateral portion of the flow path after the first vertical passage.
前記流路の前記第1の横部分の横方向と前記流路の前記第2の横部分の横方向とは実質的に互いに逆である装置。 The device according to claim 9.
A device in which the lateral direction of the first lateral portion of the flow path and the lateral direction of the second lateral portion of the flow path are substantially opposite to each other.
前記第2の鉛直通路は前記チャンバベースの前記円形チャネルの床によって画定される装置。 The device according to claim 9.
The second vertical passage is a device defined by the floor of the circular channel of the chamber base.
前記チャンバベースの底部端に結合される真空プレートを有し、前記結合されたチャンバベースと前記真空プレートとは真空源に接続された真空ポートを有して構成される真空空間を画定する装置。 The device according to claim 11.
A device having a vacuum plate coupled to the bottom end of the chamber base and defining a vacuum space configured with the coupled chamber base and the vacuum plate having a vacuum port connected to a vacuum source.
前記真空空間は前記流路の第3の横部分を画定し、前記流路の前記第3の横部分は前記真空空間の周部と前記真空ポートとから横に延在する装置。 The device according to claim 12.
The vacuum space defines a third horizontal portion of the flow path, and the third horizontal portion of the flow path extends laterally from the peripheral portion of the vacuum space and the vacuum port.
前記電極は二以上の鉛直通路を画定し、前記チャンバベースは二以上の鉛直通路を画定し、前記電極によって画定された前記二以上の鉛直通路は前記チャンバベースによって画定された前記二以上の鉛直通路のそれぞれから鉛直にオフセットする装置。 The device according to claim 5.
The electrodes define two or more vertical passages, the chamber base defines two or more vertical passages, and the two or more vertical passages defined by the electrodes are the two or more vertical passages defined by the chamber base. A device that vertically offsets from each of the passages.
前記電極によって画定された前記二以上の鉛直通路は4つの鉛直通路を含み、前記チャンバベースによって画定された前記二以上の鉛直通路は4つの鉛直通路を含み、前記電極によって画定された前記4つの鉛直通路は、前記チャンバベースによって画定された前記4つの鉛直通路のそれぞれから、前記電極と前記チャンバベースとのうちの少なくとも一方の中心に対して少なくとも30度だけ鉛直にオフセットする装置。 The device according to claim 14.
The two or more vertical passages defined by the electrodes include four vertical passages, the two or more vertical passages defined by the chamber base include four vertical passages, and the four vertical passages defined by the electrodes. A vertical passage is a device that vertically offsets from each of the four vertical passages defined by the chamber base by at least 30 degrees with respect to the center of at least one of the electrode and the chamber base.
前記電極によって画定された前記4つの鉛直通路は、前記チャンバベースによって画定された前記4つの鉛直通路のそれぞれから、前記電極と前記チャンバベースとのうちの少なくとも一方の中心に対して少なくとも45度だけ鉛直にオフセットする装置。 The device according to claim 15.
The four vertical passages defined by the electrodes are at least 45 degrees from each of the four vertical passages defined by the chamber base with respect to the center of at least one of the electrodes and the chamber base. A device that vertically offsets.
前記流路の第1部位は前記ギャップにより画定され、前記流路の第2部位は前記流路の前記第1部位の直後の水平部位を備える装置。 The device according to claim 2.
A device in which the first portion of the flow path is defined by the gap, and the second portion of the flow path includes a horizontal portion immediately after the first portion of the flow path .
前記流路の前記水平部位は前記バッフルプレートの少なくとも一部と前記電極の少なくとも一部との間に画定される装置。A device in which the horizontal portion of the flow path is defined between at least a portion of the baffle plate and at least a portion of the electrode.
前記流路の第3の鉛直部分は前記ベース組立体の真空空間から延在する真空導管によって画定される装置。A device in which a third vertical portion of the flow path is defined by a vacuum conduit extending from the vacuum space of the base assembly.
前記バッフルプレートの前記外周縁の全体は前記電極の前記側壁の前記内側表面に近接してはいるが直接は接触しない装置。A device in which the entire outer peripheral edge of the baffle plate is close to, but not in direct contact with, the inner surface of the side wall of the electrode.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862712051P | 2018-07-30 | 2018-07-30 | |
US62/712,051 | 2018-07-30 | ||
PCT/US2019/036328 WO2020027919A1 (en) | 2018-07-30 | 2019-06-10 | Systems for workpiece processing with plasma |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2021532598A JP2021532598A (en) | 2021-11-25 |
JPWO2020027919A5 true JPWO2020027919A5 (en) | 2022-06-20 |
JP7451490B2 JP7451490B2 (en) | 2024-03-18 |
Family
ID=67108144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021505186A Active JP7451490B2 (en) | 2018-07-30 | 2019-06-10 | System for processing workpieces using plasma |
Country Status (6)
Country | Link |
---|---|
US (1) | US20210287884A1 (en) |
JP (1) | JP7451490B2 (en) |
KR (1) | KR20210039422A (en) |
CN (1) | CN112673450A (en) |
SG (1) | SG11202100703SA (en) |
WO (1) | WO2020027919A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7261675B2 (en) * | 2019-07-01 | 2023-04-20 | 東京エレクトロン株式会社 | Heat treatment apparatus and heat treatment method |
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2019
- 2019-06-10 CN CN201980051030.6A patent/CN112673450A/en active Pending
- 2019-06-10 WO PCT/US2019/036328 patent/WO2020027919A1/en active Application Filing
- 2019-06-10 KR KR1020217006062A patent/KR20210039422A/en unknown
- 2019-06-10 SG SG11202100703SA patent/SG11202100703SA/en unknown
- 2019-06-10 JP JP2021505186A patent/JP7451490B2/en active Active
- 2019-06-10 US US17/263,626 patent/US20210287884A1/en active Pending
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