JPWO2019231814A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2019231814A5
JPWO2019231814A5 JP2020566673A JP2020566673A JPWO2019231814A5 JP WO2019231814 A5 JPWO2019231814 A5 JP WO2019231814A5 JP 2020566673 A JP2020566673 A JP 2020566673A JP 2020566673 A JP2020566673 A JP 2020566673A JP WO2019231814 A5 JPWO2019231814 A5 JP WO2019231814A5
Authority
JP
Japan
Prior art keywords
plasma
processing system
profile
image
edge ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2020566673A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021525947A (ja
Publication date
Priority claimed from US15/991,021 external-priority patent/US10957521B2/en
Application filed filed Critical
Publication of JP2021525947A publication Critical patent/JP2021525947A/ja
Publication of JPWO2019231814A5 publication Critical patent/JPWO2019231814A5/ja
Priority to JP2024050612A priority Critical patent/JP2024081722A/ja
Pending legal-status Critical Current

Links

JP2020566673A 2018-05-29 2019-05-23 プラズマ処理ツールにおける画像に基づくプラズマシースプロファイル検出 Pending JP2021525947A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024050612A JP2024081722A (ja) 2018-05-29 2024-03-27 プラズマ処理ツールにおける画像に基づくプラズマシースプロファイル検出

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/991,021 2018-05-29
US15/991,021 US10957521B2 (en) 2018-05-29 2018-05-29 Image based plasma sheath profile detection on plasma processing tools
PCT/US2019/033693 WO2019231814A1 (en) 2018-05-29 2019-05-23 Image based plasma sheath profile detection on plasma processing tools

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024050612A Division JP2024081722A (ja) 2018-05-29 2024-03-27 プラズマ処理ツールにおける画像に基づくプラズマシースプロファイル検出

Publications (2)

Publication Number Publication Date
JP2021525947A JP2021525947A (ja) 2021-09-27
JPWO2019231814A5 true JPWO2019231814A5 (zh) 2022-07-05

Family

ID=68692630

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020566673A Pending JP2021525947A (ja) 2018-05-29 2019-05-23 プラズマ処理ツールにおける画像に基づくプラズマシースプロファイル検出
JP2024050612A Pending JP2024081722A (ja) 2018-05-29 2024-03-27 プラズマ処理ツールにおける画像に基づくプラズマシースプロファイル検出

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024050612A Pending JP2024081722A (ja) 2018-05-29 2024-03-27 プラズマ処理ツールにおける画像に基づくプラズマシースプロファイル検出

Country Status (6)

Country Link
US (1) US10957521B2 (zh)
JP (2) JP2021525947A (zh)
KR (1) KR102528658B1 (zh)
CN (1) CN112204695A (zh)
TW (1) TWI794501B (zh)
WO (1) WO2019231814A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11538713B2 (en) * 2017-12-05 2022-12-27 Lam Research Corporation System and method for edge ring wear compensation
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
CN111524782B (zh) 2019-02-05 2023-07-25 东京毅力科创株式会社 等离子体处理装置
US11894250B2 (en) * 2020-03-31 2024-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for recognizing and addressing plasma discharge during semiconductor processes
JP2024084562A (ja) * 2022-12-13 2024-06-25 日新電機株式会社 プラズマ処理装置、及びその処理方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101441B2 (ja) * 1987-01-17 1994-12-12 株式会社ユアサコーポレーション プラズマ反応監視装置
JP2006173223A (ja) * 2004-12-14 2006-06-29 Toshiba Corp プラズマエッチング装置およびそれを用いたプラズマエッチング方法
JP4884047B2 (ja) * 2006-03-23 2012-02-22 東京エレクトロン株式会社 プラズマ処理方法
US20070224709A1 (en) * 2006-03-23 2007-09-27 Tokyo Electron Limited Plasma processing method and apparatus, control program and storage medium
US20070244709A1 (en) * 2006-04-17 2007-10-18 Earthworks Systems, Llc Methods of producing and recycling plastic cards
KR20080023569A (ko) * 2006-09-11 2008-03-14 주식회사 하이닉스반도체 식각프로파일 변형을 방지하는 플라즈마식각장치
JP4833890B2 (ja) * 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
US7873052B2 (en) * 2007-04-16 2011-01-18 Pivotal Systems Corporation System and method for controlling process end-point utilizing legacy end-point system
JP2010087473A (ja) * 2008-07-31 2010-04-15 Canon Anelva Corp 基板位置合わせ装置及び基板処理装置
CN101640181A (zh) * 2008-07-31 2010-02-03 佳能安内华股份有限公司 基底对准设备和基底处理设备
US8288741B1 (en) * 2011-08-16 2012-10-16 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for three dimensional ion processing
KR101296958B1 (ko) 2012-09-10 2013-08-14 세종대학교산학협력단 플라즈마 입자 촬상 장치 및 이를 이용한 식각 종말점 탐지 방법
US9543225B2 (en) * 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
JP6388520B2 (ja) * 2014-10-17 2018-09-12 住友重機械イオンテクノロジー株式会社 ビーム引出スリット構造、イオン源、及びイオン注入装置
US20170263478A1 (en) * 2015-01-16 2017-09-14 Lam Research Corporation Detection System for Tunable/Replaceable Edge Coupling Ring
KR20170014384A (ko) * 2015-07-30 2017-02-08 삼성전자주식회사 건식 식각장치
US20170047202A1 (en) 2015-08-11 2017-02-16 Lam Research Corporation Magnetized edge ring for extreme edge control
KR20180099776A (ko) * 2016-01-26 2018-09-05 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 에지 링 리프팅 솔루션
US10269545B2 (en) 2016-08-03 2019-04-23 Lam Research Corporation Methods for monitoring plasma processing systems for advanced process and tool control
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10748797B2 (en) * 2017-01-18 2020-08-18 Applied Materials, Inc. Plasma parameters and skew characterization by high speed imaging
JP7055054B2 (ja) * 2018-04-11 2022-04-15 東京エレクトロン株式会社 プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム

Similar Documents

Publication Publication Date Title
CN112740021B (zh) 通过生成对抗网络的超分辨率缺陷重检图像生成
KR102562020B1 (ko) 기판의 검사 방법, 기판 처리 시스템 및 컴퓨터 기억 매체
WO2002029707A3 (en) Methods and apparatus for automatic exposure control
TWI816922B (zh) 用於半導體晶圓檢測演算法選擇的系統及方法,以及非暫時性電腦可讀儲存媒體
WO2021030833A1 (en) Model based control of wafer non-uniformity
WO2005080950A1 (en) Establishing correspondence and traceability between wafers and solar cells
JPWO2019231814A5 (zh)
US10724967B2 (en) Inspection apparatus for semiconductor process and semiconductor process device
US11410292B2 (en) Equi-probability defect detection
US6873396B2 (en) Photolithography processing system
KR102393694B1 (ko) 처리액 토출 장치, 처리액 토출 방법, 기판 처리 장치, 및 폐쇄 밸브 조정 방법
US20080073523A1 (en) Semiconductor wafer defect inspection method and apparatus
CN115508384A (zh) 检查方法和检查系统
KR20220164422A (ko) 정보 처리 장치, 이송 탑재 위치 보정 방법 및 기판 처리 장치
CN115642104A (zh) 基板处理装置、半导体器件的制造方法及记录介质
US10739276B2 (en) Minimizing filed size to reduce unwanted stray light
US20210125880A1 (en) Method of monitoring semiconductor process
US20220398708A1 (en) Substrate inspection device, substrate inspection method, and storage medium
US20230416906A1 (en) Methods and apparatus for processing a substrate
WO2023154663A1 (en) Evaluation of plasma uniformity using computer vision
US20240170311A1 (en) Methods and apparatus for processing a substrate
US20240178025A1 (en) Semiconductor processing device and semiconductor processing system
CN110391153B (zh) 用于半导体工艺的检查设备和半导体工艺装置
KR20230127027A (ko) 기판 정렬 장치 및 이를 이용한 기판 정렬 방법
KR20240093970A (ko) 디바이스 제조 툴들의 분석을 위한 열적 이미징 (thermal imaging)