JPWO2019226958A5 - - Google Patents

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JPWO2019226958A5
JPWO2019226958A5 JP2021516543A JP2021516543A JPWO2019226958A5 JP WO2019226958 A5 JPWO2019226958 A5 JP WO2019226958A5 JP 2021516543 A JP2021516543 A JP 2021516543A JP 2021516543 A JP2021516543 A JP 2021516543A JP WO2019226958 A5 JPWO2019226958 A5 JP WO2019226958A5
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displaceable
conductors
electrode
sensor according
movement
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Claims (15)

容量性センサであって、
少なくとも1つの空間ギャップによって互いに隔離された少なくとも2つの導体であって、各それぞれの導体が、前記少なくとも2つの導体および前記少なくとも1つの空間ギャップに近接する領域を占有する静電界と相互作用して、前記静電界の摂動に電気的に応答するものである、少なくとも2つの導体と、
感知された条件に選択的に応答する、前記空間ギャップに交差する方向成分を有する移動の軸を有し、かつ当該移動に対応する前記静電界を摂動させる変位可能な要素であって、前記静電界が、前記変位可能な要素の前記移動の範囲にわたって、前記感知された条件に対する前記変位可能な要素の応答性を実質的に改変しないか、または引き込み(pull-in)の不安定性を実質的に引き起こさないものである、変位可能な要素とを備える、容量性センサ。
It ’s a capacitive sensor.
At least two conductors isolated from each other by at least one spatial gap, each of which interacts with the at least two conductors and an electrostatic field occupying a region close to the at least one spatial gap. With at least two conductors that are electrically responsive to the perturbations of the electrostatic field,
A displaceable element having a movement axis having a directional component intersecting the spatial gap and perturbing the static electric field corresponding to the movement, which selectively responds to the sensed conditions. The electric field does not substantially alter the responsiveness of the displaceable element to the sensed conditions over the range of movement of the displaceable element, or substantially reduces pull-in instability. Capacitive sensor with displaceable elements that do not cause.
前記少なくとも2つの導体が、線形の空間ギャップで分離された固定導体対を備え、前記固定導体対の各々が、それぞれの電位に維持されて、前記固定導体対の前記それぞれの電位の間の差に応じて、前記線形の空間ギャップの全体にわたって方向付けられた主要な電界ベクトル成分を有する、前記固定導体対の上の空間内に前記静電界を生成し、
前記変位可能な要素が、帯電要素を備え、
前記静電界に起因して前記変位可能な要素に加わる力が、前記感知された条件に応答する前記変位可能な要素の移動の状態に不感応性である、請求項1記載の容量性センサ。
The at least two conductors have a fixed conductor pair separated by a linear spatial gap, and each of the fixed conductor pairs is maintained at their respective potentials, the difference between the respective potentials of the fixed conductor pairs. Depending on, the static electric field is generated in the space above the fixed conductor pair, which has a major electric field vector component oriented throughout the linear spatial gap.
The displaceable element comprises a charged element and
The capacitive sensor of claim 1, wherein the force applied to the displaceable element due to the electrostatic field is insensitive to the state of movement of the displaceable element in response to the sensed conditions.
センサであって、
2つの導体であって、該2つの導体の各導体が平面状の面を有するものである2つの導体と、
感知される外部条件に応答して前記2つの導体に対して相対的に移動するように構成される変位可能な電極と、
バイアス電圧を供給するように構成された電圧源であって、前記バイアス電圧が変位可能な電極と前記2つの導体の前記平面状の面との間に静電界を確立するものである、電圧源とを備えるものであり、
前記変位可能な電極が、当該移動に沿った方向に厚さを有し、また前記移動に直交する方向に長さを有し、
前記長さおよび前記厚さは、前記変位可能な電極がコンプライアント(compliant)であるように選択され、
また前記2つの導体および前記変位可能な電極は、前記変位可能な電極の長さが、当該2つの電極の前記平面状の面に対して直交するように配向されるものである、センサ。
It ’s a sensor,
Two conductors in which each conductor of the two conductors has a planar surface,
Displaceable electrodes configured to move relative to the two conductors in response to perceived external conditions.
A voltage source configured to supply a bias voltage that establishes an electrostatic field between an electrode in which the bias voltage is displaceable and the planar surface of the two conductors. It is equipped with
The displaceable electrode has a thickness in the direction along the movement and a length in the direction orthogonal to the movement.
The length and the thickness are selected so that the displaceable electrode is compliant.
Further, the two conductors and the displaceable electrodes are sensors in which the lengths of the displaceable electrodes are oriented so as to be orthogonal to the planar surface of the two electrodes.
前記変位可能な電極は、前記静電界より生じる静電力が前記変位可能な電極を平衡位置に戻す復元力として作用するように、前記2つの導体に対して相対的に位置させて配向されるものである、請求項3記載のセンサ。 The displaceable electrode is oriented relative to the two conductors so that the electrostatic force generated by the electrostatic field acts as a restoring force to return the displaceable electrode to the equilibrium position. The sensor according to claim 3. 前記2つの導体間に配設されるさらなる導体をさらに備える、請求項3および4のいずれか一項に記載のセンサ。 The sensor according to any one of claims 3 and 4, further comprising an additional conductor disposed between the two conductors. 前記2つの導体が、前記電圧源を介して、前記変位可能な電極とは異なる電圧でバイアスされ、
また前記さらなる導体が、前記電圧源を介して、中間電位でバイアスされる、請求項5記載のセンサ。
The two conductors are biased through the voltage source at a voltage different from that of the displaceable electrode.
The sensor according to claim 5, wherein the additional conductor is biased at an intermediate potential via the voltage source.
前記2つの導体は、正味の静電力が前記変位可能な電極にかかる引力であるように、前記電圧源を介してバイアスされ、
また前記さらなる導体は、前記変位可能な電極にかかる反発力を確立するようにバイアスされる、請求項5記載のセンサ。
The two conductors are biased through the voltage source so that the net electrostatic force is the attractive force exerted on the displaceable electrode.
The sensor of claim 5, wherein the additional conductor is biased to establish a repulsive force exerted on the displaceable electrode.
前記変位可能な電極が、ヒンジで可動的に支持される、請求項3から7のいずれか一項に記載のセンサ。 The sensor according to any one of claims 3 to 7, wherein the displaceable electrode is movably supported by a hinge. 前記変位可能な電極が、平面状のダイアフラムを備え、
また前記平面状のダイアフラムは、感知される前記外部条件として複数の開口を介して通過して流れる空気の粘性抗力が含まれるように、前記複数の開口を備える、請求項3から8のいずれか一項に記載のセンサ。
The displaceable electrode comprises a planar diaphragm and
Also, any of claims 3 to 8, wherein the planar diaphragm comprises the plurality of openings so that the perceived external condition includes the viscous drag of air flowing through the plurality of openings. The sensor described in item 1.
前記2つの導体の前記平面状の面が、同一平面上にある、請求項3から9のいずれか一項に記載のセンサ。 The sensor according to any one of claims 3 to 9, wherein the planar surfaces of the two conductors are on the same plane. 前記2つの導体が、ギャップによって分離され、
また前記変位可能な電極が、前記ギャップに配設される平衡位置を有する、請求項3から10のいずれか一項に記載のセンサ。
The two conductors are separated by a gap
The sensor according to any one of claims 3 to 10, wherein the displaceable electrode has an equilibrium position arranged in the gap.
前記変位可能な電極の長さが、前記変位可能な電極の平衡位置において前記2つの導体の前記平面状の面に対して直交である、請求項3から11のいずれか一項に記載のセンサ。 The sensor according to any one of claims 3 to 11, wherein the length of the displaceable electrode is orthogonal to the planar surface of the two conductors at the equilibrium position of the displaceable electrode. .. 前記バイアス電圧が、前記2つの導体に印加される、請求項3から12のいずれか一項に記載のセンサ。 The sensor according to any one of claims 3 to 12, wherein the bias voltage is applied to the two conductors. 前記移動に対応する信号を発生するように構成される増幅器をさらに備える、請求項3から13のいずれか一項に記載のセンサ。 The sensor according to any one of claims 3 to 13, further comprising an amplifier configured to generate a signal corresponding to the movement. 振動を感知する方法であって、
少なくとも2つの分離された導電性表面と、偏向可能な要素上の前記少なくとも2つの分離された導電性表面によって生成される力に垂直な偏向軸を有する前記偏向可能な要素と、を提供することと、
前記少なくとも2つの導電性表面に対して前記偏向可能な要素上で電位を誘導することと、
前記偏向軸に沿った前記偏向可能な要素の偏向に起因する前記少なくとも2つの導電性表面上の誘導電荷の変化を感知することであって、前記偏向可能な要素上の前記少なくとも2つの分離された導電性表面によって生成される前記力が、前記偏向可能な要素の偏向を実質的に改変しない、感知することと、を含む、方法。
It ’s a way to detect vibration,
To provide at least two separated conductive surfaces and said deflectable element having a deflection axis perpendicular to the force generated by the at least two separated conductive surfaces on the deflectable element. When,
Inducing an electric potential on the deflectable element with respect to the at least two conductive surfaces.
Sensing the change in induced charge on the at least two conductive surfaces due to the deflection of the deflectable element along the deflection axis, the at least two separated on the deflectable element. A method comprising sensing that the force generated by a conductive surface does not substantially alter the deflection of the deflectable element.
JP2021516543A 2018-05-24 2019-05-23 capacitive sensor Active JP7410935B2 (en)

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US201862676071P 2018-05-24 2018-05-24
US201862676058P 2018-05-24 2018-05-24
US62/676,058 2018-05-24
US62/676,071 2018-05-24
PCT/US2019/033855 WO2019226958A1 (en) 2018-05-24 2019-05-23 Capacitive sensor

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201906197RA (en) 2016-12-09 2019-08-27 Univ New York State Res Found Fiber microphone
JP6947125B2 (en) * 2018-06-05 2021-10-13 日本電信電話株式会社 Fiber optic pathfinding methods, fiber optic pathfinding systems, signal processing equipment and programs
US11412187B2 (en) * 2019-10-21 2022-08-09 Alarm.Com Incorporated Batteryless video doorbell
JP7428317B2 (en) 2020-06-09 2024-02-06 日清紡マイクロデバイス株式会社 MEMS element
EP4356623A1 (en) 2021-06-14 2024-04-24 Soundskrit Inc. Mems transducer
CN114778626B (en) * 2022-04-28 2024-03-22 深圳可孚生物科技有限公司 Glucose sensor signal conditioning circuit
CN114814291B (en) * 2022-05-09 2024-06-07 西安中科华芯测控有限公司 Semiconductor micro-optical cavity acceleration sensor chip and monitoring system and method thereof

Family Cites Families (152)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3312892A (en) * 1964-05-04 1967-04-04 Technology Instr Corp Of Calif Contactless electrical transducer having moving parts
US4063167A (en) * 1976-06-07 1977-12-13 Avco Corporation Blade tip clearance measuring apparatus
JPH0672899B2 (en) * 1988-04-01 1994-09-14 株式会社日立製作所 Acceleration sensor
JPH07254716A (en) * 1994-03-16 1995-10-03 Murata Mfg Co Ltd Semiconductor capacity type acceleration sensor and its production
FR2759792B1 (en) 1997-02-17 1999-04-16 Centre Electron Horloger WATCHMAKING PART COMPRISING A NON-CONTACT DETECTION DEVICE
US5870482A (en) * 1997-02-25 1999-02-09 Knowles Electronics, Inc. Miniature silicon condenser microphone
USRE40860E1 (en) 2000-09-02 2009-07-21 University Of Warwick Electrostatic audio loudspeakers
US6891240B2 (en) * 2002-04-30 2005-05-10 Xerox Corporation Electrode design and positioning for controlled movement of a moveable electrode and associated support structure
US7006720B2 (en) * 2002-04-30 2006-02-28 Xerox Corporation Optical switching system
JP2005249454A (en) 2004-03-02 2005-09-15 Mitsubishi Electric Corp Capacity type acceleration sensor
EP1771763A1 (en) * 2004-06-24 2007-04-11 Cornell Research Foundation, Inc. Fibrous-composite-material-based mems optical scanner
US7347102B2 (en) * 2005-08-10 2008-03-25 Postech Foundation Contact-type electric capacitive displacement sensor
JP5264497B2 (en) 2005-12-02 2013-08-14 エー. デニッシュ,リー Shape / acceleration measuring instrument and apparatus
DE102006055147B4 (en) 2006-11-03 2011-01-27 Infineon Technologies Ag Sound transducer structure and method for producing a sound transducer structure
US8705775B2 (en) 2007-04-25 2014-04-22 University Of Florida Research Foundation, Inc. Capacitive microphone with integrated cavity
GB2451909B (en) 2007-08-17 2012-07-11 Wolfson Microelectronics Plc Mems process and device
WO2010002887A2 (en) * 2008-06-30 2010-01-07 The Regents Of The University Of Michigan Piezoelectric memes microphone
GB2466785B (en) 2008-12-30 2011-06-08 Wolfson Microelectronics Plc Apparatus and method for testing a capacitive transducer and/or associated electronic circuitry
BRPI1008199A2 (en) * 2009-06-05 2016-03-01 Koninkl Philips Electronics Nv capacitive detection system for detecting an object, capacitive detection method for detecting an object and computer program for detecting an object
ITTO20090495A1 (en) 2009-06-30 2011-01-01 St Microelectronics Srl PREAMPLIFIER CIRCUIT FOR A CAPACITIVE MICRO-ELECTROMECHANICAL ACOUSTIC TRANSDUCER
JP2011185828A (en) 2010-03-10 2011-09-22 Fuji Electric Co Ltd Acceleration sensor
US9408555B2 (en) 2010-06-30 2016-08-09 Indiana University Research And Technology Corporation Supersensitive linear pressure transducer
DE102011010506B4 (en) 2011-02-07 2017-10-26 Tdk Corporation microphone array
US9525925B2 (en) 2011-02-25 2016-12-20 Infineon Technologies Ag Sensor with movable part and biasing
ITTO20110577A1 (en) 2011-06-30 2012-12-31 Stmicroelectronics Malta Ltd ENCAPSULATION FOR A MEMS SENSOR AND ITS MANUFACTURING PROCEDURE
US9236837B2 (en) 2011-08-25 2016-01-12 Infineon Technologies Ag System and method for low distortion capacitive signal source amplifier
US8638249B2 (en) 2012-04-16 2014-01-28 Infineon Technologies Ag System and method for high input capacitive signal amplifier
US9210516B2 (en) 2012-04-23 2015-12-08 Infineon Technologies Ag Packaged MEMS device and method of calibrating a packaged MEMS device
US9281744B2 (en) 2012-04-30 2016-03-08 Infineon Technologies Ag System and method for a programmable voltage source
EP2861524A4 (en) * 2012-06-13 2016-07-06 Purdue Research Foundation Microelectromechanical system and methods of use
US9148729B2 (en) 2012-09-25 2015-09-29 Invensence, Inc. Microphone with programmable frequency response
US9181086B1 (en) 2012-10-01 2015-11-10 The Research Foundation For The State University Of New York Hinged MEMS diaphragm and method of manufacture therof
WO2014100012A1 (en) 2012-12-20 2014-06-26 The Regents Of The University Of California Electrostatic graphene speaker
US9947858B2 (en) 2012-12-28 2018-04-17 Dow Corning Corporation Curable organopolysiloxane composition for transducers and applications of such curable silicone composition for transducers
WO2014127126A1 (en) 2013-02-14 2014-08-21 New York University Handphone
EP2773131B1 (en) * 2013-02-27 2020-04-01 Harman Becker Automotive Systems GmbH Spherical microphone array
US20140247954A1 (en) 2013-03-01 2014-09-04 Silicon Audio, Inc. Entrained Microphones
JP6127595B2 (en) 2013-03-11 2017-05-17 オムロン株式会社 Acoustic transducer
US10225653B2 (en) 2013-03-14 2019-03-05 Cirrus Logic, Inc. Systems and methods for using a piezoelectric speaker as a microphone in a mobile device
US9008344B2 (en) 2013-03-14 2015-04-14 Cirrus Logic, Inc. Systems and methods for using a speaker as a microphone in a mobile device
US9128136B2 (en) 2013-03-15 2015-09-08 Infineon Technologies Ag Apparatus and method for determining the sensitivity of a capacitive sensing device
GB2513406B (en) 2013-04-26 2016-01-20 Cirrus Logic Int Semiconductor Ltd Signal processing for MEMS capacitive transducers
US9111548B2 (en) 2013-05-23 2015-08-18 Knowles Electronics, Llc Synchronization of buffered data in multiple microphones
JP6113581B2 (en) 2013-06-12 2017-04-12 株式会社東芝 Pressure sensor, acoustic microphone, blood pressure sensor, and touch panel
US9181080B2 (en) 2013-06-28 2015-11-10 Infineon Technologies Ag MEMS microphone with low pressure region between diaphragm and counter electrode
GB2515836B (en) 2013-07-05 2016-01-20 Cirrus Logic Int Semiconductor Ltd MEMS device and process
ITTO20130651A1 (en) 2013-07-31 2015-02-01 St Microelectronics Srl PROCESS OF MANUFACTURING AN ENCAPSULATED DEVICE, IN PARTICULAR AN ENCAPSULATED MICRO-ELECTRO-MECHANICAL SENSOR, EQUIPPED WITH AN ACCESSIBLE STRUCTURE, AS A MEMS MICROPHONE AND ENCAPSULATED DEVICE SO OBTAINED
US9143869B2 (en) 2013-08-19 2015-09-22 Google Inc. Electrostatic speaker
US9628886B2 (en) 2013-08-26 2017-04-18 Infineon Technologies Ag MEMS device
JP6211866B2 (en) 2013-09-20 2017-10-11 株式会社東芝 Pressure sensor, microphone, blood pressure sensor, and touch panel
US9769573B2 (en) 2013-10-17 2017-09-19 Turtle Beach Corporation Transparent parametric transducer and related methods
US9351083B2 (en) 2013-10-17 2016-05-24 Turtle Beach Corporation Transparent parametric emitter
ITTO20130910A1 (en) 2013-11-08 2015-05-09 St Microelectronics Srl MICRO-ELECTROMECHANICAL ACOUSTIC TRANSDUCER DEVICE WITH IMPROVED DETECTION FUNCTIONALITY AND ITS ELECTRONIC DEVICE
US9961440B2 (en) 2013-12-25 2018-05-01 Wizedsp Ltd. Systems and methods for using electrostatic microphone
DE102014202009A1 (en) 2014-02-05 2015-08-06 Robert Bosch Gmbh Method and means for regulating the electrical bias on the measuring capacitor of a MEMS sensor element
US9502019B2 (en) 2014-02-10 2016-11-22 Robert Bosch Gmbh Elimination of 3D parasitic effects on microphone power supply rejection
US9445173B2 (en) 2014-03-10 2016-09-13 Infineon Technologies Ag System and method for a transducer system with wakeup detection
CN106105264A (en) 2014-03-14 2016-11-09 罗伯特·博世有限公司 Integrated self-test for dynamo-electric capacitance type sensor
WO2015142486A1 (en) 2014-03-17 2015-09-24 Robert Bosch Gmbh System and method for all electrical noise testing of mems microphones in production
JP5847225B2 (en) 2014-03-26 2016-01-20 住友理工株式会社 Dielectric film, manufacturing method thereof, and transducer using the same
US9878901B2 (en) 2014-04-04 2018-01-30 Analog Devices, Inc. Fabrication of tungsten MEMS structures
DE112015001680T5 (en) 2014-05-01 2017-01-26 Robert Bosch Gmbh Frequency-modulated microphone system
EP2945286B1 (en) 2014-05-12 2018-06-27 ams AG Amplifier arrangement and amplification method
JP6270626B2 (en) 2014-05-23 2018-01-31 株式会社オーディオテクニカ Variable directivity electret condenser microphone
JP6270625B2 (en) 2014-05-23 2018-01-31 株式会社オーディオテクニカ Variable directivity electret condenser microphone
JP6414231B2 (en) 2014-06-05 2018-10-31 Tdk株式会社 Microphone electronic circuit and method of operating a microphone
US9319772B2 (en) 2014-06-20 2016-04-19 Merry Electronics (Shenzhen) Co., Ltd. Multi-floor type MEMS microphone
KR20160001453A (en) 2014-06-27 2016-01-06 삼성전기주식회사 Microphone
US9641949B2 (en) 2014-06-30 2017-05-02 Infineon Technologies Ag MEMS device and method for manufacturing the MEMS device
KR20160006336A (en) 2014-07-08 2016-01-19 삼성디스플레이 주식회사 transducer and electronic device including the same
US9462395B2 (en) 2014-07-22 2016-10-04 Stmicroelectronics S.R.L. Biasing circuit for a MEMS acoustic transducer with reduced start-up time
CN204046818U (en) 2014-07-28 2014-12-24 瑞声声学科技(深圳)有限公司 Capacitance MEMS (micro-electro-mechanical system) microphone
US9369804B2 (en) 2014-07-28 2016-06-14 Robert Bosch Gmbh MEMS membrane overtravel stop
US20160037263A1 (en) 2014-08-04 2016-02-04 Knowles Electronics, Llc Electrostatic microphone with reduced acoustic noise
US9491531B2 (en) 2014-08-11 2016-11-08 3R Semiconductor Technology Inc. Microphone device for reducing noise coupling effect
US9282389B1 (en) 2014-08-18 2016-03-08 Invensense, Inc. Microelectromechanical systems device optimized for flip-chip assembly and method of attaching the same
US9743203B2 (en) 2014-09-10 2017-08-22 Robert Bosch Gmbh High-voltage reset MEMS microphone network and method of detecting defects thereof
CN106716636B (en) 2014-09-17 2021-05-28 英特尔公司 Die with integrated microphone device using through-silicon vias (TSVs)
US10006824B2 (en) 2014-09-29 2018-06-26 Invensense, Inc. Microelectromechanical systems (MEMS) pressure sensor having a leakage path to a cavity
US9743191B2 (en) 2014-10-13 2017-08-22 Knowles Electronics, Llc Acoustic apparatus with diaphragm supported at a discrete number of locations
US9628920B2 (en) 2014-10-16 2017-04-18 Infineon Technologies Ag Voltage generator and biasing thereof
JP6547272B2 (en) 2014-10-16 2019-07-24 ヤマハ株式会社 Electro-acoustic transducer
JP6554742B2 (en) 2014-10-22 2019-08-07 国立大学法人静岡大学 Electret element, microphone equipped with the electret element, and method for manufacturing the electret element
FR3027762B1 (en) 2014-10-27 2018-01-19 Universite Du Maine ELECTROACOUSTIC TRANSDUCER, ASSEMBLY AND SYSTEM THEREFOR
KR101601214B1 (en) 2014-11-11 2016-03-08 현대자동차주식회사 Biasing circuit for microphone and microphone comprising the same
US10182296B2 (en) 2014-11-11 2019-01-15 Invensense, Inc. Secure audio sensor
US9439002B2 (en) 2014-11-13 2016-09-06 Invensense, Inc. Integrated package forming wide sense gap micro electro-mechanical system microphone and methodologies for fabricating the same
US9451359B2 (en) 2014-11-25 2016-09-20 Invensense, Inc. Preamplifier for a microphone
EP3026815B1 (en) 2014-11-28 2019-10-30 STMicroelectronics Srl Fbdda amplifier, device including the fbdda amplifier and method of controlling the fbdda amplifier
JP6439158B2 (en) 2014-12-04 2018-12-19 株式会社オーディオテクニカ Capacitor type transducer
US9736594B2 (en) 2014-12-05 2017-08-15 Invensense, Inc. Microelectromechanical systems electret microphone
CN105744452B (en) 2014-12-12 2019-04-02 瑞声声学科技(深圳)有限公司 MEMS microphone circuit
US9961451B2 (en) 2014-12-15 2018-05-01 Stmicroelectronics S.R.L. Differential-type MEMS acoustic transducer
US9544672B2 (en) 2014-12-15 2017-01-10 Piotr Nawrocki Condenser microphone
US9706312B2 (en) 2014-12-16 2017-07-11 Stmicroelectronics S.R.L. Sensing circuit and method of detecting an electrical signal generated by a microphone
KR102236083B1 (en) 2014-12-18 2021-04-06 삼성디스플레이 주식회사 All-In-One Device
FR3030739B1 (en) 2014-12-18 2019-05-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives DYNAMIC PRESSURE SENSOR WITH IMPROVED OPERATION
GB2533410B (en) 2014-12-19 2017-03-01 Cirrus Logic Int Semiconductor Ltd MEMS devices and processes
US9503823B2 (en) 2014-12-24 2016-11-22 Infineon Technologies Ag Capacitive microphone with insulated conductive plate
KR102369124B1 (en) 2014-12-26 2022-03-03 삼성디스플레이 주식회사 Image display apparatus
US10200794B2 (en) 2014-12-31 2019-02-05 Invensense, Inc. Ultrasonic operation of a digital microphone
US9479875B2 (en) 2015-01-23 2016-10-25 Silicon Audio Directional, Llc Multi-mode microphones
US9503820B2 (en) 2015-01-23 2016-11-22 Silicon Audio Directional, Llc Multi-mode microphones
WO2016120213A1 (en) 2015-01-26 2016-08-04 Cirrus Logic International Semiconductor Limited Mems devices and processes
US9967679B2 (en) 2015-02-03 2018-05-08 Infineon Technologies Ag System and method for an integrated transducer and temperature sensor
CN104796832B (en) 2015-02-16 2018-10-16 迈尔森电子(天津)有限公司 MEMS microphone and forming method thereof
CA2979807A1 (en) 2015-03-16 2016-09-22 The Regents Of The University Of California Ultrasonic microphone and ultrasonic acoustic radio
US9706294B2 (en) 2015-03-18 2017-07-11 Infineon Technologies Ag System and method for an acoustic transducer and environmental sensor package
CN105721997B (en) 2015-04-08 2019-04-05 华景科技无锡有限公司 A kind of MEMS silicon microphone and preparation method thereof
US20160309264A1 (en) 2015-04-14 2016-10-20 Knowles Electronics, Llc Acoustic Apparatus Using Flex PCB Circuit With Integrated I/O Fingers
US10123130B2 (en) 2015-05-20 2018-11-06 Kabushiki Kaisha Audio-Technica Diaphragm, electroacoustic transducer, and electroacoustic transducer apparatus
US9540226B2 (en) 2015-05-20 2017-01-10 Infineon Technologies Ag System and method for a MEMS transducer
ITUB20151133A1 (en) 2015-05-29 2016-11-29 St Microelectronics Srl DIFFERENTIAL AMPLIFIER CIRCUIT FOR A CAPACITIVE ACOUSTIC TRANSDUCER AND CORRESPONDING CAPACITIVE ACOUSTIC TRANSDUCER
US10123131B2 (en) 2015-06-08 2018-11-06 Invensense, Inc. Microelectromechanical microphone with differential capacitive sensing
US9815685B2 (en) 2015-06-15 2017-11-14 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor sensing structure and manufacturing method thereof
US9681243B2 (en) 2015-06-17 2017-06-13 Robert Bosch Gmbh In-plane overtravel stops for MEMS microphone
US9658179B2 (en) 2015-06-24 2017-05-23 Infineon Technologies Ag System and method for a MEMS transducer
US10003889B2 (en) 2015-08-04 2018-06-19 Infineon Technologies Ag System and method for a multi-electrode MEMS device
US9843862B2 (en) 2015-08-05 2017-12-12 Infineon Technologies Ag System and method for a pumping speaker
JP6533130B2 (en) 2015-09-01 2019-06-19 株式会社オーディオテクニカ Audio output circuit of condenser microphone
MX2018003152A (en) 2015-09-14 2019-02-07 Wing Acoustics Ltd Improvements in or relating to audio transducers.
US9611135B1 (en) 2015-10-30 2017-04-04 Infineon Technologies Ag System and method for a differential comb drive MEMS
US10104478B2 (en) 2015-11-13 2018-10-16 Infineon Technologies Ag System and method for a perpendicular electrode transducer
US20170142519A1 (en) 2015-11-17 2017-05-18 Cirrus Logic International Semiconductor Ltd. Digital microphones
US9661411B1 (en) 2015-12-01 2017-05-23 Apple Inc. Integrated MEMS microphone and vibration sensor
US10117020B2 (en) 2015-12-18 2018-10-30 Cirrus Logic, Inc. Systems and methods for restoring microelectromechanical system transducer operation following plosive event
US10129651B2 (en) 2015-12-18 2018-11-13 Robert Bosch Gmbh Center-fixed MEMS microphone membrane
EP3197046B1 (en) 2016-01-25 2021-04-14 Sonion Nederland B.V. Self-biasing output booster amplifier and use thereof
US10008990B2 (en) 2016-02-03 2018-06-26 Infineon Technologies Ag System and method for acoustic transducer supply
US9894437B2 (en) 2016-02-09 2018-02-13 Knowles Electronics, Llc Microphone assembly with pulse density modulated signal
GB2564613B (en) 2016-02-26 2019-06-05 Cirrus Logic Int Semiconductor Ltd Digital microphones
GB2547729B (en) 2016-02-29 2020-01-22 Cirrus Logic Int Semiconductor Ltd Integrated MEMS transducer and circuitry
US10541683B2 (en) 2016-03-07 2020-01-21 Infineon Technologies Ag System and method for high-ohmic circuit
US20170265005A1 (en) 2016-03-08 2017-09-14 Baltic Latvian Universal Electronics, Llc Microphone capsule with odd number of sides
US10277988B2 (en) 2016-03-09 2019-04-30 Robert Bosch Gmbh Controlling mechanical properties of a MEMS microphone with capacitive and piezoelectric electrodes
US10045121B2 (en) 2016-04-29 2018-08-07 Invensense, Inc. Microelectromechanical systems (MEMS) microphone bias voltage
US10171916B2 (en) 2016-04-29 2019-01-01 Infineon Technologies Ag System and method for a high-ohmic resistor
DE102016111909B4 (en) 2016-06-29 2020-08-13 Infineon Technologies Ag Micromechanical structure and method of making it
GB2555510B (en) 2016-06-30 2020-03-11 Cirrus Logic Int Semiconductor Ltd MEMS device and process
US10085094B2 (en) 2016-06-30 2018-09-25 Cirrus Logic, Inc. MEMS devices and processes
CN109417672A (en) 2016-06-30 2019-03-01 思睿逻辑国际半导体有限公司 MEMS device and method
US10153740B2 (en) 2016-07-11 2018-12-11 Knowles Electronics, Llc Split signal differential MEMS microphone
US10257616B2 (en) 2016-07-22 2019-04-09 Knowles Electronics, Llc Digital microphone assembly with improved frequency response and noise characteristics
GB2552555B (en) 2016-07-28 2019-11-20 Cirrus Logic Int Semiconductor Ltd MEMS device and process
GB2551854B (en) 2016-07-28 2019-03-27 Cirrus Logic Int Semiconductor Ltd MEMS device and process
GB2553154B (en) 2016-08-22 2019-11-20 Cirrus Logic Int Semiconductor Ltd MEMS device
US9936304B2 (en) 2016-08-23 2018-04-03 Infineon Technologies Ag Digital silicon microphone with configurable sensitivity, frequency response and noise transfer function
US10073486B2 (en) 2016-08-29 2018-09-11 Infineon Technologies Ag System and method for supply current shaping
KR101807146B1 (en) 2016-09-09 2017-12-07 현대자동차 주식회사 High sensitivity microphone and manufacturing method thereof
GB2554470A (en) 2016-09-26 2018-04-04 Cirrus Logic Int Semiconductor Ltd MEMS device and process
US9980046B2 (en) 2016-09-29 2018-05-22 Invensense, Inc. Microphone distortion reduction
US11254559B2 (en) * 2017-03-05 2022-02-22 Kris Vossough FET based sensory systems

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