CN114814291B - Semiconductor micro-optical cavity acceleration sensor chip and monitoring system and method thereof - Google Patents
Semiconductor micro-optical cavity acceleration sensor chip and monitoring system and method thereof Download PDFInfo
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- CN114814291B CN114814291B CN202210501571.8A CN202210501571A CN114814291B CN 114814291 B CN114814291 B CN 114814291B CN 202210501571 A CN202210501571 A CN 202210501571A CN 114814291 B CN114814291 B CN 114814291B
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- 230000001133 acceleration Effects 0.000 title claims abstract description 98
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000012544 monitoring process Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 14
- 230000035945 sensitivity Effects 0.000 claims abstract description 13
- 238000001514 detection method Methods 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 230000001427 coherent effect Effects 0.000 claims description 8
- 206010070834 Sensitisation Diseases 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 230000008313 sensitization Effects 0.000 claims description 7
- 238000003491 array Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/03—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses by using non-electrical means
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Abstract
The invention discloses a semiconductor micro-optical cavity acceleration sensor chip and a monitoring system and a method thereof, belonging to the technical field of acceleration sensors, wherein the semiconductor micro-optical cavity acceleration sensor chip comprises: the device comprises a mirror surface structure, an acceleration sensitive structure and a bottom layer structure which are sequentially arranged from top to bottom along the vertical direction, wherein the mirror surface structure is used for receiving infrared light, the infrared light penetrates through the mirror surface structure and then is reflected for multiple times to form multiple beams of reflected light, and the multiple beams of reflected light penetrate through the mirror surface structure and then form multiple beam interference; the acceleration sensitive structure comprises a mass block, and the mass block can move along the vertical direction; the semiconductor micro-optical cavity acceleration sensor chip is provided with a working mode, and in the working mode, the bottom layer structure and the mirror structure are provided with voltages, so that the equivalent rigidity of the mass block can be reduced, and the sensitivity adjustment is realized. The invention can realize the improvement of the integration level and the range expansion of the sensor.
Description
Technical Field
The invention relates to the technical field of acceleration sensors, in particular to a semiconductor micro-optical cavity acceleration sensor chip and a monitoring system and method thereof.
Background
The high-performance acceleration sensor is a key component of tip equipment, and has wide requirements and application in various fields of military industry, civil use and the like. Acceleration sensors are generally classified into four classes, consumer, tactical, navigational and strategic, depending on the zero bias stability and scale factor stability. The existing silicon micro-sensor basically occupies consumer grade and tactical grade scene application, and as the semiconductor micro-processing technology is further mature, the silicon micro-acceleration sensor is expected to enter higher-end markets.
The Fabry-Perot optical cavity is an optical cavity structure formed by two parallel mirror surfaces, and after light is incident, multiple reflection and transmission can be formed in the optical cavity, so that interference of multiple reflected lights can be generated. This property can be used to manufacture acceleration sensors based on micro-optical cavities. However, the prior reports and patents have the defects of limited range, lower resolution, low intelligent degree and the like.
Disclosure of Invention
The invention aims to provide a semiconductor micro-optical cavity acceleration sensor chip, a monitoring system and a monitoring method thereof, so as to realize the improvement of the integration level and the range expansion of a sensor.
The technical scheme for solving the technical problems is as follows:
The invention provides a semiconductor micro-optical cavity acceleration sensor chip, which comprises: the device comprises a mirror surface structure, an acceleration sensitive structure and a bottom layer structure which are sequentially arranged from top to bottom along the vertical direction, wherein the mirror surface structure is used for receiving infrared light, the infrared light penetrates through the mirror surface structure and then is reflected for multiple times to form multiple beams of reflected light, and the multiple beams of reflected light penetrate through the mirror surface structure and then form multiple beam interference; the acceleration sensitive structure comprises a mass block, and the mass block can move along the vertical direction; the semiconductor micro-optical cavity acceleration sensor chip is provided with a working mode, and in the working mode, the bottom layer structure and the mirror structure are provided with voltages, so that the equivalent rigidity of the mass block can be reduced, and the sensitivity adjustment is realized.
Optionally, the acceleration sensitive structure and the mirror structure form a fabry-perot interference cavity, and the height between the acceleration sensitive structure and the mirror structure along the vertical direction is the cavity length of the fabry-perot interference cavity; the cavity length is changed according to the moving distance of the mass block, and the Fabry-Perot interference cavity is used for changing the intensity of the transmitted light and the reflected light according to the cavity length change.
Optionally, the mirror structure includes a mirror body and an electrode portion, the electrode portion includes a plurality of "L" electrodes, and a plurality of "L" electrode arrays are disposed on the mirror body, each of the "L" electrodes has a "1" portion and a "one" portion, the "1" portion is disposed through the mirror body, and the "one" portion is attached to a side of the mirror body close to the acceleration sensitive structure; the "1" portion is configured as a through-silicon-perforated electrode and the "one" portion is configured as a metal electrode.
Optionally, an insulating layer is further disposed between the mirror structure and the acceleration sensitive structure, and the insulating layer is used for preventing electrical connection between the mirror structure and the acceleration sensitive structure.
Optionally, the acceleration sensitive structure further includes a spring beam support, a structural frame, and a contact boss, the mass block is located at a geometric center of the structural frame, and the spring beam support connects the mass block and the structural frame for supporting movement of the mass block in a vertical direction; the contact boss is supported between the structural frame and the underlying structure for providing a movable space for the mass.
Optionally, the bottom layer structure includes bottom layer main part, aluminium layer and external electrode, the bottom layer structure is close to one side of acceleration sensitive structure constructs to the electrode face, aluminium layer with the external electrode all set up in on the electrode face, and, the aluminium layer is connected simultaneously contact boss with the external electrode, in order to link up through the aluminium layer the external electrode with acceleration sensitive structure.
Optionally, the bottom main part is constructed to the U type main part, be provided with 2 first metal electrodes on the U type main part, 2 first metal electrodes equipartition in the bottom of U type main part and interval setting, first metal electrode is used for receiving static bias voltage, two tip of U type main part are used for setting up aluminium layer and external electrode.
Optionally, the aluminum layer and the contact boss are connected to form a closed structure, the external electrode is located outside the closed structure, and the external electrode has a plurality of external electrodes, and a plurality of external electrodes are arranged at intervals.
The invention also provides an acceleration monitoring system, which comprises the semiconductor micro-light cavity acceleration sensor chip based on the semiconductor micro-light cavity, and further comprises: the light intensity detection module comprises a sensitization unit and is used for receiving the transmitted light and the reflected light to generate a light intensity detection result and processing the light intensity detection result; the sensitization unit is used for respectively applying electrostatic bias voltages to the mirror surface structure and the bottom layer structure.
The invention also provides an acceleration monitoring method of the acceleration monitoring system, which comprises the following steps:
s1: controlling a coherent light source to emit infrared light;
s2: processing the infrared light by using an acceleration sensor to obtain the cavity length variation and multi-beam interference of the acceleration sensor;
s3: controlling the light intensity detection module to receive the cavity length variation and the multi-beam interference to obtain a light intensity detection result;
s4: judging whether the light intensity detection result reaches a preset detection threshold value, if so, returning to the step S1; otherwise, respectively applying electrostatic bias voltages to the mirror structure and the bottom layer structure, and returning to the step S1.
The invention has the following beneficial effects:
1. The method utilizes the high sensitivity of the Fabry-Perot interference cavity to displacement to finish the acceleration measurement with higher sensitivity;
2. the sensitivity of the acceleration sensor is adjustable by utilizing the static bias stiffness softening effect.
3. The mode of combining MEMS and ASIC can be realized, and the sensing unit is combined with the circuit unit, so that the integration level of the system is improved.
Drawings
FIG. 1 is a schematic diagram of a semiconductor micro-optical cavity acceleration sensor chip according to the present invention;
FIG. 2 is a schematic diagram of an acceleration monitoring system according to the present invention;
FIG. 3 is a schematic diagram of an acceleration sensitive structure according to the present invention;
Fig. 4 is a schematic diagram of the working principle of the semiconductor micro-optical cavity acceleration sensor chip provided by the invention.
Description of the reference numerals
1-A mirror structure; 11- "one" part; 12- "1" section; 13-an optical window; 2-acceleration sensitive structure; 21-spring beam supports; 22-mass block; 24-a structural frame; 3-an underlying structure; 31-a first metal electrode; a 32-aluminum layer; 33-external electrodes; 4-an insulating layer; 41-a coherent light source; 42-a light intensity detection module.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
Examples
The technical scheme for solving the technical problems is as follows:
The invention provides a semiconductor micro-optical cavity acceleration sensor chip, referring to fig. 1, the semiconductor micro-optical cavity acceleration sensor chip comprises: the mirror structure 1, the acceleration sensitive structure 2 and the bottom layer structure 3 are sequentially arranged from top to bottom along the vertical direction, wherein the mirror structure 1 is used for receiving infrared light, the infrared light is reflected for multiple times after penetrating through the mirror structure 1 to form multiple beams of reflected light, and the multiple beams of reflected light penetrate through the mirror structure 1 to form multiple beam interference; the acceleration sensitive structure 2 comprises a mass 22, which mass 22 is movable in a vertical direction; the semiconductor micro-optical cavity acceleration sensor chip is provided with a working mode, and in the working mode, the bottom layer structure 3 and the mirror structure 1 are provided with voltages, so that the equivalent rigidity of the mass block can be reduced, and the sensitivity adjustment is realized.
Optionally, the acceleration sensitive structure 2 and the mirror structure 1 form a fabry-perot interference cavity, and along the vertical direction, the height between the acceleration sensitive structure 2 and the mirror structure 1 is the cavity length of the fabry-perot interference cavity; the cavity length varies according to the moving distance of the mass 22, and the fabry-perot interference cavity is used to vary the intensities of the transmitted light and the reflected light according to the cavity length variation.
Alternatively, referring to fig. 1, the mirror structure 1 includes a mirror body and an electrode portion, the electrode portion includes a plurality of "L" electrodes, and a plurality of "L" electrode arrays are disposed on the mirror body, each of the "L" electrodes has a "1" portion 12 and a "one" portion 11, the "1" portion 12 is disposed through the mirror body, and the "one" portion 11 is attached to a side of the mirror body close to the acceleration sensitive structure 2; the "1" portion 12 is configured as a through-silicon-via electrode, and the "one" portion 11 is configured as a metal electrode.
Further, referring to fig. 2, the plurality of "L" type electrodes is 4, and thus, the electrodeless portions between the four "one" portions 11 form the optical window 13, and the optical window 13 is for transmitting infrared rays, and thus, no electrode is disposed under the optical window 13.
Optionally, an insulating layer 4 is further disposed between the mirror structure 1 and the acceleration sensitive structure 2, and the insulating layer 4 is used for preventing electrical connection between the mirror structure 1 and the acceleration sensitive structure 2.
Of course, in the present invention, the mirror structure 1 and the acceleration sensitive structure 2 are connected by a bonding technique.
Alternatively, referring to fig. 1 and 3, the acceleration sensitive structure 2 further includes a spring beam support 21 and a structural frame 24, the mass 22 is located at the geometric center of the structural frame 24, and the spring beam support 21 connects the mass 22 and the structural frame 24 for supporting the movement of the mass 22 in the vertical direction.
Here, the spring beam support 21 is a support beam structure having a spring property, and generally may be a straight beam, a folded beam, a serpentine beam, or the like, and the present invention is not particularly limited.
Referring to fig. 1, in order to avoid that the acceleration sensitive structure 2 is in contact with the substructure 3 during movement, the acceleration sensitive structure 2 further comprises a contact boss, which is supported between the structure frame 24 and the substructure 3 for providing a movable space for the mass 22.
In the present invention, the acceleration sensitive structure 2 is an integrated structure and is formed by conventional MEMS fabrication process combinations, including photolithography, etching, deposition, sputtering, and the like.
Alternatively, referring to fig. 1 and 2, the substructure 3 includes a substructure main body, an aluminum layer 32, and an external electrode 33, one side of the substructure 3 near the acceleration-sensitive structure 2 is configured as an electrode surface, the aluminum layer 32 and the external electrode 33 are both disposed on the electrode surface, and the aluminum layer 32 connects the contact boss and the external electrode 33 at the same time so as to penetrate the external electrode 33 and the acceleration-sensitive structure 2 through the aluminum layer 32.
Since the acceleration sensitive structure 2 is an integrated structure, the base boss, the structural frame, the spring beam support 21, and the mass 22 in the acceleration sensitive structure 2 are all electrically connected to the aluminum layer 32, so that external electricity can be connected through the external electrode 33.
Alternatively, referring to fig. 1, the bottom main body is configured as a U-shaped main body, 2 first metal electrodes are disposed on the U-shaped main body, 2 first metal electrodes are uniformly distributed at the bottom of the U-shaped main body and are disposed at intervals, the first metal electrodes are used for receiving electrostatic bias voltages, and two ends of the U-shaped main body are used for disposing the aluminum layer 32 and the external electrode 33.
Here, the longitudinal direction of the underlying body is a direction parallel to the paper surface in fig. 2, and the external electrode 33 is provided outside the aluminum layer 32. It will be understood, of course, that the expression "outer" in the sense of the present invention is "inner" and "outer" with respect to the surface profile of the object, taking the underlying structure 3 as an example, its "inner" being within its profile line and vice versa.
Here, the "one" portion 11 metal electrode and the first metal electrode 31 form a first electrostatic capacitance C 11 and a second electrostatic capacitance C 31 with the acceleration-sensitive structure 2, respectively, and the magnitudes of the capacitances are:
Wherein ε is the dielectric constant, S 11 is the facing area of the metal electrode of the "one" part 11, S 31 is the facing area of the first metal electrode 31, k is the electrostatic force constant, d 11 is the initial distance between the metal electrode of the "one" part 11 and the acceleration sensitive structure 2, d 31 is the initial distance between the first metal electrode 31 and the acceleration sensitive structure 2, and is the displacement of the mass 22 in the vertical direction.
When an electrostatic bias voltage is applied to the metal electrode of the "one" portion 11 and the first metal electrode 31, a corresponding electrostatic force is generated on the mass 22, and the magnitude of the electrostatic force F is:
wherein V is the magnitude of the electrostatic bias voltage.
Thus, electrostatic voltages V Upper part and V Lower part(s) are applied to the mirror structure 1 and the underlying structure 3, and thus the acceleration-sensitive structure 2 remains at zero potential at all times. By utilizing the softening effect of the electrostatic stiffness, the equivalent stiffness of the spring beam support 21 is reduced, so that when the sensor faces acceleration of the same magnitude, the micro-light cavity length is changed more obviously, and the sensitivity of the whole sensor is enhanced.
In addition, due to the negative stiffness effect of static electricity, the stiffness of the spring beam support 21 is modulated and reduced, and the larger the static bias voltage is, the smaller the stiffness of the spring beam support 21 is, so that under the same acceleration, the displacement of the mass block 22 becomes larger, the cavity length change value of the Fabry-Perot Luo Guangqiang is increased, the change of the multi-beam interference light intensity is increased, and the sensor sensitization effect is achieved.
Alternatively, referring to fig. 2, the aluminum layer 32 and the contact boss are connected to form a closed structure, the external electrode 33 is located outside the closed structure, and the external electrode 33 has a plurality of external electrodes 33 spaced apart from each other.
Thus, it is conceivable for those skilled in the art that one aluminum layer 32 is correspondingly connected to each external electrode 33, and thus, in a specific design, a plurality of contact bosses, a plurality of aluminum layers 32, and a plurality of external electrodes 33 may be designed, and each contact boss, aluminum layer 32, and external electrode 33 are disposed in one-to-one correspondence.
The invention also provides an acceleration monitoring system, referring to fig. 2, the acceleration monitoring system comprises the semiconductor micro-optical cavity acceleration sensor chip based on the semiconductor micro-optical cavity, and further comprises: a coherent light source 41 and a light intensity detection module 42, wherein the coherent light source 41 is used for emitting infrared light, and the light intensity detection module comprises a sensitization unit and is used for receiving the transmitted light and the reflected light to generate a light intensity detection result and processing the light intensity detection result; the sensitization unit is used for respectively applying electrostatic bias voltages to the mirror surface structure 1 and the bottom layer structure 3.
The invention also provides an acceleration monitoring method based on the acceleration monitoring system, which comprises the following steps:
S1: controlling the coherent light source 41 to emit infrared light;
s2: processing the infrared light by using an acceleration sensor, and obtaining the cavity length variation and multi-beam interference of the acceleration sensor by referring to the graph shown in fig. 4;
Here, a plurality of reflected lights of the transmitted light formed by the infrared light through the mirror structure 1 after a series of reflections in the cavity are transmitted out of the mirror structure 1, and the plurality of reflected lights and the transmitted lights thereof form multi-beam interference, and the interference light intensity changes periodically with the change of the cavity length.
S3: controlling the light intensity detection module 42 to receive the cavity length variation and the multi-beam interference to obtain a light intensity detection result; therefore, the light intensity detection module 42 is capable of deriving the external acceleration from the cavity length variation, and deriving the gravitational acceleration from the light intensity variation of the transmitted light and the reflected light thereof after receiving the cavity length variation, the transmitted light and the reflected light.
S4: judging whether the light intensity detection result reaches a preset detection threshold value, if so, returning to the step S1; otherwise, after applying electrostatic bias voltages to the mirror structure 1 and the underlying structure 3, respectively, the process returns to step S1.
Specifically, electrostatic bias voltages V Upper part and V Lower part(s) are applied to the first metal electrode 31 of the first part 11 of the mirror structure 1 and the underlying structure 3, so that the sensitivity of the sensor can be enhanced, and the resolution that the sensor can detect can be greatly improved by 3 to 5 times.
The specific principle is as follows: after the electrostatic bias voltage is applied, the acceleration sensitive structure 2 always keeps zero potential, and the equivalent stiffness of the spring beam support 21 is reduced by utilizing the electrostatic stiffness softening effect, so that when the sensor faces acceleration with the same magnitude, the cavity length of the Fabry-Perot interference cavity is more obviously changed, and the sensitivity of the whole sensor is enhanced.
The invention has the following beneficial effects:
1. The method utilizes the high sensitivity of the Fabry-Perot interference cavity to displacement to finish the acceleration measurement with higher sensitivity;
2. the sensitivity of the acceleration sensor is adjustable by utilizing the static bias stiffness softening effect.
3. The mode of combining MEMS and ASIC can be realized, and the sensing unit is combined with the circuit unit, so that the integration level of the system is improved.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (5)
1. The utility model provides a semiconductor shimmer chamber acceleration sensor chip which characterized in that, semiconductor shimmer chamber acceleration sensor chip includes:
The mirror surface structure (1), the acceleration sensitive structure (2) and the bottom layer structure (3) are sequentially arranged from top to bottom along the vertical direction;
the mirror structure (1) is used for receiving infrared light, and the infrared light is reflected for multiple times after penetrating through the mirror structure (1) to form multiple reflected light beams, and the multiple reflected light beams form multiple beam interference after penetrating through the mirror structure (1);
The acceleration sensitive structure (2) comprises a mass (22), the mass (22) being movable in a vertical direction; the semiconductor micro-optical cavity acceleration sensor chip is provided with a working mode, and in the working mode, the bottom layer structure (3) and the mirror structure (1) are provided with voltages so as to reduce the equivalent rigidity of the mass block (22) and realize sensitivity adjustment;
the acceleration sensitive structure (2) and the mirror structure (1) form a Fabry-Perot interference cavity, and the height between the acceleration sensitive structure (2) and the mirror structure (1) is the cavity length of the Fabry-Perot interference cavity along the vertical direction;
The cavity length changes according to the moving distance of the mass block (22), and the Fabry-Perot interference cavity is used for changing the intensities of transmitted light and reflected light according to the cavity length changes;
The mirror structure (1) comprises a mirror body and an electrode part, wherein the electrode part comprises a plurality of L-shaped electrodes, a plurality of L-shaped electrode arrays are arranged on the mirror body, each L-shaped electrode is provided with a1 part (12) and a1 part (11), the 1 part (12) penetrates through the mirror body, and one part (11) is attached to one side, close to the acceleration sensitive structure (2), of the mirror body; the 1 part (12) is configured as a through-silicon-hole electrode, and the one part (11) is configured as a metal electrode;
The acceleration sensitive structure (2) further comprises a spring beam support (21), a structural frame body (24) and a contact boss, wherein the mass block (22) is positioned at the geometric center of the structural frame body (24), and the spring beam support (21) is connected with the mass block (22) and the structural frame body (24) and is used for supporting the movement of the mass block (22) along the vertical direction; the contact boss is supported between the structural frame (24) and the underlying structure (3) for providing a free space for the mass (22);
The bottom layer structure (3) comprises a bottom layer main body, an aluminum layer (32) and an external electrode (33), one side, close to the acceleration sensitive structure (2), of the bottom layer structure (3) is configured to be an electrode surface, the aluminum layer (32) and the external electrode (33) are arranged on the electrode surface, and the aluminum layer (32) is simultaneously connected with the contact boss and the external electrode (33) so as to penetrate through the external electrode (33) and the acceleration sensitive structure (2) through the aluminum layer (32);
The bottom layer main body is constructed into a U-shaped main body, 2 first metal electrodes (31) are arranged on the U-shaped main body, 2 first metal electrodes (31) are uniformly distributed at the bottom of the U-shaped main body and are arranged at intervals, the first metal electrodes (31) are used for receiving electrostatic bias voltage, and two end parts of the U-shaped main body are used for arranging an aluminum layer (32) and an external electrode (33).
2. The semiconductor micro-optical cavity acceleration sensor chip according to claim 1, characterized in that an insulating layer (4) is further arranged between the mirror structure (1) and the acceleration sensitive structure (2), and the insulating layer (4) is used for preventing the mirror structure (1) and the acceleration sensitive structure (2) from generating electrical connection.
3. The semiconductor micro-optical cavity acceleration sensor chip according to claim 1, characterized in, that the aluminum layer (32) and the contact boss are connected to form a closed structure, the external electrode (33) is located outside the closed structure, and the external electrode (33) has a plurality, and a plurality of the external electrodes (33) are arranged at intervals.
4. An acceleration monitoring system, characterized in that the acceleration monitoring system comprises a semiconductor micro-optical cavity acceleration sensor chip according to any one of the claims 1-3, further comprising: a coherent light source (41) and a light intensity detection module (42), wherein the coherent light source (41) is used for emitting infrared light, and the light intensity detection module (42) comprises a sensitization unit and is used for receiving the transmitted light and the reflected light to generate a light intensity detection result and processing the light intensity detection result; the sensitization unit is used for respectively applying electrostatic bias voltages to the mirror surface structure (1) and the bottom layer structure (3).
5. An acceleration monitoring method of an acceleration monitoring system according to claim 4, characterized in, that the monitoring method comprises:
s1: controlling the coherent light source (41) to emit infrared light;
s2: processing the infrared light by using an acceleration sensor to obtain the cavity length variation and multi-beam interference of the acceleration sensor;
s3: controlling the light intensity detection module (42) to receive the cavity length variation and multi-beam interference to obtain a light intensity detection result;
S4: judging whether the light intensity detection result reaches a preset detection threshold value, if so, returning to the step S1; otherwise, respectively applying electrostatic bias voltages to the mirror structure (1) and the bottom layer structure (3), and returning to the step S1.
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| CN111521842A (en) * | 2020-06-18 | 2020-08-11 | 中北大学 | Electrostatic rigidity adjustment Z-axis resonant micro-accelerometer based on tunnel magnetic resistance detection |
| CN114414845A (en) * | 2022-01-26 | 2022-04-29 | 西安交通大学 | Chip-level integrated Fabry-Perot optical MEMS acceleration sensor |
| CN114814290A (en) * | 2022-05-09 | 2022-07-29 | 西安中科华芯测控有限公司 | Triaxial closed-loop acceleration sensor and monitoring system and method thereof |
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